P

Inventor

HUANG CHENG-HAN

TW27 patents
⚠️ This page may combine multiple inventors who share the name “HUANG CHENG-HAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

UNITED MICROELECTRONICS CORP

14 patents
US5364803ANov 15, 1994

Method of preventing fluorine-induced gate oxide degradation in WSix polycide structure

UNITED MICROELECTRONICS CORP116 citations98
US5668394ASep 16, 1997

Prevention of fluorine-induced gate oxide degradation in WSi polycide structure

UNITED MICROELECTRONICS CORP74 citations96
US5418176AMay 23, 1995

Process for producing memory devices having narrow buried N+ lines

UNITED MICROELECTRONICS CORP88 citations96
US5364817ANov 15, 1994

Tungsten-plug process

UNITED MICROELECTRONICS CORP95 citations93
US6037201AMar 14, 2000

Method for manufacturing mixed-mode devices

UNITED MICROELECTRONICS CORP29 citations92
US6033958AMar 7, 2000

Method of fabricating dual voltage MOS transistors

UNITED MICROELECTRONICS CORP30 citations92
US5895252AApr 20, 1999

Field oxidation by implanted oxygen (FIMOX)

UNITED MICROELECTRONICS CORP33 citations92
US5449630ASep 12, 1995

Method for fabricating a trench capacitor structure for dynamic random access memory integrated circuit

UNITED MICROELECTRONICS CORP52 citations92
US6403487B1Jun 11, 2002

Method of forming separated spacer structures in mixed-mode integrated circuits

UNITED MICROELECTRONICS CORP28 citations91
US5965464AOct 12, 1999

Manufacturing method of double spacer structure for mixed-mode IC

UNITED MICROELECTRONICS CORP20 citations89
US5472903ADec 5, 1995

Isolation technology for sub-micron devices

UNITED MICROELECTRONICS CORP6 citations74
US5459095AOct 17, 1995

Method for making capacitor for use in DRAM cell using triple layers of photoresist

UNITED MICROELECTRONICS CORP15 citations74
US5429976AJul 4, 1995

Self-aligned method for forming polysilicon word lines on top of gate electrodes to increase capacitance of a stacked capacitor in a DRAM cell

UNITED MICROELECTRONICS CORP11 citations74
US5115296AMay 19, 1992

Preferential oxidization self-aligned contact technology

UNITED MICROELECTRONICS CORP17 citations74

AU OPTRONICS CORP

8 patents

TAIWAN SEMICONDUCTOR MFG CO LTD

2 patents

NEW YORK BLOOD CENTER INC

1 patent

CHENG HSIAO-CHUNG

1 patent

QUANTA COMP INC

1 patent