Inventor
OH DONG-YEAN
KR25 patents
⚠️ This page may combine multiple inventors who share the name “OH DONG-YEAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SK HYNIX INC
16 patentsUS9691819B2Jun 27, 2017
Vertical transistor and variable resistive memory device including the same
SK HYNIX INC13 citations84
US9613957B1Apr 4, 2017
Semiconductor device and method for manufacturing the same
SK HYNIX INC9 citations83
US10186483B2Jan 22, 2019
Fuse structure and method of manufacturing the same
SK HYNIX INC1 citations72
US9978679B2May 22, 2018
Fuse structure and method of manufacturing the same
SK HYNIX INC2 citations72
US9305642B2Apr 5, 2016
Resistance memory device and apparatus, fabrication method thereof, operation method thereof, and system having the same
SK HYNIX INC4 citations68
US12495542B2Dec 9, 2025
Semiconductor device and method for fabricating the same
SK HYNIX INC1 citations61
US10332994B2Jun 25, 2019
Method for manufacturing three-dimensional semiconductor integrated circuit device
SK HYNIX INC0 citations52
US9093524B2Jul 28, 2015
Vertical-type semiconductor apparatus and fabrication method thereof
SK HYNIX INC1 citations52
US10680118B2Jun 9, 2020
Semiconductor integrated circuit device including nano-wire selector and method of manufacturing the same
SK HYNIX INC0 citations51
US10325846B2Jun 18, 2019
Fuse structure and method of manufacturing the same
SK HYNIX INC0 citations51
US10297674B2May 21, 2019
Method for manufacturing a transistor and method for manufacturing a ring oscillator using the same
SK HYNIX INC0 citations51
US10121902B2Nov 6, 2018
Semiconductor integrated circuit device including nano-wire selector and method of manufacturing the same
SK HYNIX INC0 citations51
US9859171B2Jan 2, 2018
Semiconductor device and method for manufacturing the same
SK HYNIX INC0 citations51
US9837470B2Dec 5, 2017
Method of manufacturing a semiconductor integrated circuit device including a transistor with a vertical channel
SK HYNIX INC1 citations51
US9484102B2Nov 1, 2016
Semiconductor device and method of operating the same
SK HYNIX INC0 citations50
US10777740B2Sep 15, 2020
Phase changeable memory device and semiconductor integrated circuit device including the same
SK HYNIX INC0 citations41
SAMSUNG ELECTRONICS CO LTD
5 patentsUS8036043B2Oct 11, 2011
Nonvolatile semiconductor device and memory system including the same
SAMSUNG ELECTRONICS CO LTD8 citations84
USRE47169EDec 18, 2018
NAND flash memory device and method of making same
SAMSUNG ELECTRONICS CO LTD1 citations63
US7494871B2Feb 24, 2009
Semiconductor memory devices and methods for forming the same
SAMSUNG ELECTRONICS CO LTD2 citations63
US8933517B2Jan 13, 2015
Semiconductor device comprising a dummy well
SAMSUNG ELECTRONICS CO LTD0 citations52
US7898039B2Mar 1, 2011
Non-volatile memory devices including double diffused junction regions
SAMSUNG ELECTRONICS CO LTD1 citations52
OH DONG-YEAN
4 patentsUS8243518B2Aug 14, 2012
NAND flash memory device and method of making same
OH DONG-YEAN59 citations97
US8456918B2Jun 4, 2013
NAND flash memory device and method of operating same to reduce a difference between channel potentials therein
OH DONG-YEAN39 citations93
US8654585B2Feb 18, 2014
NAND flash memory device and method of making same
OH DONG-YEAN16 citations92
US8324052B2Dec 4, 2012
Methods of fabricating non-volatile memory devices including double diffused junction regions
OH DONG-YEAN2 citations62