Inventor
DUDEK VOLKER
DE48 patents
⚠️ This page may combine multiple inventors who share the name “DUDEK VOLKER”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
ATMEL GERMANY GMBH
16 patentsUS7001804B2Feb 21, 2006
Method of producing active semiconductor layers of different thicknesses in an SOI wafer
ATMEL GERMANY GMBH100 citations97
US7078324B2Jul 18, 2006
Method of fabricating a semiconductor component with active regions separated by isolation trenches
ATMEL GERMANY GMBH41 citations92
US7064385B2Jun 20, 2006
DMOS-transistor with lateral dopant gradient in drift region and method of producing the same
ATMEL GERMANY GMBH46 citations92
US6878603B2Apr 12, 2005
Process for manufacturing a DMOS transistor
ATMEL GERMANY GMBH24 citations91
US6933215B2Aug 23, 2005
Process for doping a semiconductor body
ATMEL GERMANY GMBH14 citations83
US6806131B2Oct 19, 2004
Process for manufacturing a DMOS transistor
ATMEL GERMANY GMBH15 citations83
US6780713B2Aug 24, 2004
Process for manufacturing a DMOS transistor
ATMEL GERMANY GMBH14 citations83
US7233044B2Jun 19, 2007
MOS transistor and method for producing a MOS transistor structure
ATMEL GERMANY GMBH7 citations74
US6720238B2Apr 13, 2004
Method for manufacturing buried areas
ATMEL GERMANY GMBH7 citations72
US6716721B2Apr 6, 2004
Method for manufacturing a silicon wafer
ATMEL GERMANY GMBH10 citations72
US7539965B2May 26, 2009
Circuit layout with active components and high breakdown voltage
ATMEL GERMANY GMBH3 citations62
US7504692B2Mar 17, 2009
High-voltage field-effect transistor
ATMEL GERMANY GMBH6 citations62
US7144796B2Dec 5, 2006
Method of fabricating semiconductor components through implantation and diffusion in a semiconductor substrate
ATMEL GERMANY GMBH2 citations62
US6764923B2Jul 20, 2004
Method for manufacturing components of an SOI wafer
ATMEL GERMANY GMBH3 citations61
US7601568B2Oct 13, 2009
MOS transistor and method for producing a MOS transistor structure
ATMEL GERMANY GMBH0 citations52
US7189619B2Mar 13, 2007
Process for manufacturing vertically insulated structural components on SOI material of various thickness
ATMEL GERMANY GMBH0 citations41
3 5 POWER ELECTRONICS GMBH
16 patentsUS10340394B2Jul 2, 2019
III-V semiconductor diode
3 5 POWER ELECTRONICS GMBH8 citations84
US10312381B2Jun 4, 2019
III-V semiconductor diode
3 5 POWER ELECTRONICS GMBH7 citations84
US10263124B2Apr 16, 2019
III-V semiconductor diode
3 5 POWER ELECTRONICS GMBH8 citations84
US10192745B2Jan 29, 2019
Method for manufacturing a layer stack from a p+-substrate, a p−-layer, an n−-layer and a third layer
3 5 POWER ELECTRONICS GMBH7 citations84
US10074540B2Sep 11, 2018
III-V semiconductor diode
3 5 POWER ELECTRONICS GMBH8 citations84
US10854760B2Dec 1, 2020
Stacked III-V semiconductor diode
3 5 POWER ELECTRONICS GMBH3 citations73
US10734532B2Aug 4, 2020
III-V semiconductor diode
3 5 POWER ELECTRONICS GMBH3 citations73
US10784381B2Sep 22, 2020
Stacked III-V semiconductor component
3 5 POWER ELECTRONICS GMBH1 citations62
US10276730B2Apr 30, 2019
Stacked Schottky diode
3 5 POWER ELECTRONICS GMBH1 citations62
US11784261B2Oct 10, 2023
Stacked III-V semiconductor diode
3 5 POWER ELECTRONICS GMBH0 citations56
US11271117B2Mar 8, 2022
Stacked high-blocking III-V power semiconductor diode
3 5 POWER ELECTRONICS GMBH0 citations52
US11171226B2Nov 9, 2021
GaAS based IGBT semiconductor structure
3 5 POWER ELECTRONICS GMBH0 citations52
US10847626B2Nov 24, 2020
Stacked III-V semiconductor component
3 5 POWER ELECTRONICS GMBH0 citations52
US11791423B2Oct 17, 2023
Stacked III-V semiconductor diode
3 5 POWER ELECTRONICS GMBH0 citations45
US11769839B2Sep 26, 2023
Stacked III-V semiconductor diode
3 5 POWER ELECTRONICS GMBH0 citations45
US10825734B2Nov 3, 2020
Method for fabricating a semiconductor device and a semiconductor device
3 5 POWER ELECTRONICS GMBH0 citations42
ATMEL CORP
6 patentsUS7348256B2Mar 25, 2008
Methods of forming reduced electric field DMOS using self-aligned trench isolation
ATMEL CORP20 citations91
US7402846B2Jul 22, 2008
Electrostatic discharge (ESD) protection structure and a circuit using the same
ATMEL CORP17 citations89
US8378414B2Feb 19, 2013
Low leakage FINFETs
ATMEL CORP5 citations73
US7560334B2Jul 14, 2009
Method and system for incorporating high voltage devices in an EEPROM
ATMEL CORP5 citations71
US7230342B2Jun 12, 2007
Registration mark within an overlap of dopant regions
ATMEL CORP0 citations51
US7848070B2Dec 7, 2010
Electrostatic discharge (ESD) protection structure and a circuit using the same
ATMEL CORP0 citations48
TELEFUNKEN SEMICONDUCTORS GMBH & CO KG
3 patentsUS7973333B2Jul 5, 2011
Lateral DMOS transistor and method for the production thereof
TELEFUNKEN SEMICONDUCTORS GMBH & CO KG6 citations60
US7851326B2Dec 14, 2010
Method for producing deep trench structures
TELEFUNKEN SEMICONDUCTORS GMBH & CO KG1 citations50
US7923362B2Apr 12, 2011
Method for manufacturing a metal-semiconductor contact in semiconductor components
TELEFUNKEN SEMICONDUCTORS GMBH & CO KG0 citations34