Inventor
ENDO KAZUHIKO
JP43 patents
⚠️ This page may combine multiple inventors who share the name “ENDO KAZUHIKO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
NEC CORP
19 patentsUS6091081AJul 18, 2000
Insulating film comprising amorphous carbon fluoride, a semiconductor device comprising such an insulating film
NEC CORP55 citations96
US6033979AMar 7, 2000
Method of fabricating a semiconductor device with amorphous carbon layer
NEC CORP76 citations96
US5698901ADec 16, 1997
Semiconductor device with amorphous carbon layer for reducing wiring delay
NEC CORP54 citations96
US5866920AFeb 2, 1999
Semiconductor device and manufacturing method of the same
NEC CORP78 citations95
US6071797AJun 6, 2000
Method for forming amorphous carbon thin film by plasma chemical vapor deposition
NEC CORP22 citations93
US6846743B2Jan 25, 2005
Method for vapor deposition of a metal compound film
NEC CORP23 citations92
US6149730ANov 21, 2000
Apparatus for forming films of a semiconductor device, a method of manufacturing a semiconductor device, and a method of forming thin films of a semiconductor
NEC CORP50 citations92
US6121162ASep 19, 2000
Method of forming a fluorine-added insulating film
NEC CORP27 citations92
US5780121AJul 14, 1998
Method for preparing a fluoro-containing polyimide film
NEC CORP28 citations92
US6197704B1Mar 6, 2001
Method of fabricating semiconductor device
NEC CORP26 citations91
US7385265B2Jun 10, 2008
High dielectric constant MOSFET device
NEC CORP12 citations84
US6329295B1Dec 11, 2001
Semiconductor device capable of having amorphous carbon fluoride film of low dielectric constant as interlayer insulation material and method of manufacturing the same
NEC CORP5 citations74
US6104092AAug 15, 2000
Semiconductor device having amorphous carbon fluoride film of low dielectric constant as interlayer insulation material
NEC CORP13 citations74
US5795655AAug 18, 1998
Method for preparing a fluoro-containing polyimide film
NEC CORP5 citations74
US6372628B1Apr 16, 2002
Insulating film comprising amorphous carbon fluoride, a semiconductor device comprising such an insulating film, and a method for manufacturing the semiconductor device
NEC CORP11 citations73
US6180531B1Jan 30, 2001
Semiconductor manufacturing method
NEC CORP10 citations73
US5702773ADec 30, 1997
Method for preparing a fluoro-containing polyimide film
NEC CORP3 citations63
US7910474B2Mar 22, 2011
Method of manufacturing a semiconductor device
NEC CORP1 citations52
US7056839B2Jun 6, 2006
Method of forming a silica insulation film with a reduced dielectric constant
NEC CORP1 citations52
TEAC CORP
3 patentsSONY CORP
3 patentsUS5173644ADec 22, 1992
Convergence correction apparatus
SONY CORP2 citations57
US6495950B1Dec 17, 2002
Deflection yoke for color cathode-ray tube
SONY CORP0 citations52
US5512803AApr 30, 1996
Apparatus for compensating for image rotation in a CRT display and method for preparing the same
SONY CORP1 citations45
NEC ELECTRONICS CORP
2 patentsUS7391115B2Jun 24, 2008
Semiconductor device and manufacturing method thereof
NEC ELECTRONICS CORP23 citations92
US7763979B2Jul 27, 2010
Organic insulating film, manufacturing method thereof, semiconductor device using such organic insulating film and manufacturing method thereof
NEC ELECTRONICS CORP12 citations84
LIU YONGXUN
2 patentsUS8399330B2Mar 19, 2013
Nano-wire field effect transistor, method for manufacturing the transistor, and integrated circuit including the transistor
LIU YONGXUN19 citations89
US8399879B2Mar 19, 2013
Nano-wire field effect transistor, method for manufacturing the transistor, and integrated circuit including the transistor
LIU YONGXUN18 citations81