Inventor
TAMATSUKA MASARO
JP30 patents
⚠️ This page may combine multiple inventors who share the name “TAMATSUKA MASARO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SHINETSU HANDOTAI KK
29 patentsUS6478883B1Nov 12, 2002
Silicon single crystal wafer, epitaxial silicon wafer, and methods for producing them
SHINETSU HANDOTAI KK84 citations97
US6680260B2Jan 20, 2004
Method of producing a bonded wafer and the bonded wafer
SHINETSU HANDOTAI KK53 citations96
US6191009B1Feb 20, 2001
Method for producing silicon single crystal wafer and silicon single crystal wafer
SHINETSU HANDOTAI KK57 citations96
US7147711B2Dec 12, 2006
Method of producing silicon wafer and silicon wafer
SHINETSU HANDOTAI KK22 citations92
US6573159B1Jun 3, 2003
Method for thermally annealing silicon wafer and silicon wafer
SHINETSU HANDOTAI KK29 citations92
US6413310B1Jul 2, 2002
Method for producing silicon single crystal wafer and silicon single crystal wafer
SHINETSU HANDOTAI KK45 citations92
US6299982B1Oct 9, 2001
Silicon single crystal wafer and method for producing silicon single crystal wafer
SHINETSU HANDOTAI KK25 citations92
US6261361B1Jul 17, 2001
Silicon single crystal wafer having few defects wherein nitrogen is doped and a method for producing it
SHINETSU HANDOTAI KK34 citations92
US6224668B1May 1, 2001
Method for producing SOI substrate and SOI substrate
SHINETSU HANDOTAI KK38 citations92
US6139625AOct 31, 2000
Method for producing a silicon single crystal wafer and a silicon single crystal wafer
SHINETSU HANDOTAI KK27 citations92
US6077343AJun 20, 2000
Silicon single crystal wafer having few defects wherein nitrogen is doped and a method for producing it
SHINETSU HANDOTAI KK33 citations92
US6162708ADec 19, 2000
Method for producing an epitaxial silicon single crystal wafer and the epitaxial silicon single crystal wafer
SHINETSU HANDOTAI KK47 citations91
US6197109B1Mar 6, 2001
Method for producing low defect silicon single crystal doped with nitrogen
SHINETSU HANDOTAI KK17 citations84
US6809015B2Oct 26, 2004
Method for heat treatment of silicon wafers and silicon wafer
SHINETSU HANDOTAI KK9 citations74
US6802899B1Oct 12, 2004
Silicon single crystal wafer and manufacturing process therefor
SHINETSU HANDOTAI KK11 citations74
US6626994B1Sep 30, 2003
Silicon wafer for epitaxial wafer, epitaxial wafer, and method of manufacture thereof
SHINETSU HANDOTAI KK12 citations74
US7189293B2Mar 13, 2007
Method of producing annealed wafer and annealed wafer
SHINETSU HANDOTAI KK7 citations73
US6599603B1Jul 29, 2003
Silicon wafer
SHINETSU HANDOTAI KK9 citations73
US5444246AAug 22, 1995
Determining carbon concentration in silicon single crystal by FT-IR
SHINETSU HANDOTAI KK11 citations73
US5386118AJan 31, 1995
Method and apparatus for determination of interstitial oxygen concentration in silicon single crystal
SHINETSU HANDOTAI KK10 citations71
US7011717B2Mar 14, 2006
Method for heat treatment of silicon wafers and silicon wafer
SHINETSU HANDOTAI KK2 citations63
US6878645B2Apr 12, 2005
Method for manufacturing silicon wafer
SHINETSU HANDOTAI KK3 citations63
US6291874B1Sep 18, 2001
Method for producing silicon single crystal wafer for particle monitoring and silicon single crystal wafer for particle monitoring
SHINETSU HANDOTAI KK3 citations63
US11248306B2Feb 15, 2022
Anodic-oxidation equipment, anodic-oxidation method, and method for producing cathode of anodic-oxidation equipment
SHINETSU HANDOTAI KK0 citations62
US6841450B2Jan 11, 2005
Annealed wafer manufacturing method and annealed wafer
SHINETSU HANDOTAI KK3 citations62
US6805743B2Oct 19, 2004
Method for manufacturing single-crystal-silicon wafers
SHINETSU HANDOTAI KK4 citations62
US7153785B2Dec 26, 2006
Method of producing annealed wafer and annealed wafer
SHINETSU HANDOTAI KK5 citations61
US7326658B2Feb 5, 2008
Method for preparing nitrogen-doped annealed wafer and nitrogen-doped and annealed wafer
SHINETSU HANDOTAI KK0 citations52
US6670261B2Dec 30, 2003
Production method for annealed wafer
SHINETSU HANDOTAI KK1 citations52