Inventor

KIM CHUNG-WOO

KR38 patents

⚠️ This page may combine multiple inventors who share the name “KIM CHUNG-WOO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

KIM CHUNG-WOO

SAMSUNG ELECTRONICS CO LTD

Non-volatile memory devices including vertical channels, methods of operating, and methods of fabricating the same

Non-volatile semiconductor memory device with alternative metal gate material

Nonvolatile silicon/oxide/nitride/silicon/nitride/oxide/silicon memory

SONOS memory device having side gate stacks and method of manufacturing the same

Complementary nonvolatile memory device

SONOS memory device

SONOS type memory device

Nonvolatile memory device utilizing a vertical nanotube

SONOS memory device having nano-sized trap elements

Semiconductor device including high-k insulating layer and method of manufacturing the same

Nonvolatile semiconductor memory device having a gate stack and method of manufacturing the same

Method of manufacturing a memory device having improved erasing characteristics

Silicon-oxide-nitride-oxide-silicon (SONOS) memory device and methods of manufacturing and operating the same

Single electron transistor having memory function

Method of fabricating a single electron transistor having memory function

Silicon/oxide/nitride/silicon nonvolatile memory with vertical channels

MEMS device and fabrication method thereof

Methods of manufacturing non-volatile memory devices having insulating layers treated using neutral beam irradiation

Single electron transistor using porous silicon and manufacturing method thereof

Single electron transistor using porous silicon

Methods of programming silicon oxide nitride oxide semiconductor (SONOS) memory devices

SONOS memory device having side gate stacks and method of manufacturing the same

CMOS thin film transistor comprising common gate, logic device comprising the CMOS thin film transistor, and method of manufacturing the CMOS thin film transistor

MEMS device and fabrication method thereof

Methods of operating and manufacturing logic device and semiconductor device including complementary nonvolatile memory device, and reading circuit for the same

SONOS memory device having nano-sized trap elements

Semiconductor device doped with Sb, Ga, or Bi and method of manufacturing the same

Semiconductor device doped with Sb, Ga or Bi and method of manufacturing the same

Memory devices including barrier layers and methods of manufacturing the same

Method of operating a SONOS memory device

Multi-bit non-volatile memory device, method of operating the same, and method of fabricating the same

KWANG YOUL SEO

Nonvolatile memory device and method of manufacturing the same

Nonvolatile memory device and method of manufacturing the same

JEON SANG-HUN

SONOS memory device using an amorphous memory node material

SEOUL NAT UNIV IND FOUNDATION

Charge trap memory with avalanche generation inducing layer

TIWARI SANDIP

Shape memory device

PARK YOON-DONG

Method of erasing a memory device including complementary nonvolatile memory devices

PARK WAN-JUN

Non-volatile memory device including metal-insulator transition material