Inventor
GILTON TERRY L
US155 patents
⚠️ This page may combine multiple inventors who share the name “GILTON TERRY L”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MICRON TECHNOLOGY INC
47 patentsUS7132675B2Nov 7, 2006
Programmable conductor memory cell structure and method therefor
MICRON TECHNOLOGY INC202 citations99
US6864500B2Mar 8, 2005
Programmable conductor memory cell structure
MICRON TECHNOLOGY INC368 citations99
US6348365B1Feb 19, 2002
PCRAM cell manufacturing
MICRON TECHNOLOGY INC465 citations99
US5151168ASep 29, 1992
Process for metallizing integrated circuits with electrolytically-deposited copper
MICRON TECHNOLOGY INC257 citations99
US7479650B2Jan 20, 2009
Method of manufacture of programmable conductor memory
MICRON TECHNOLOGY INC95 citations98
US6955940B2Oct 18, 2005
Method of forming chalcogenide comprising devices
MICRON TECHNOLOGY INC68 citations98
US6903361B2Jun 7, 2005
Non-volatile memory structure
MICRON TECHNOLOGY INC88 citations98
US6867996B2Mar 15, 2005
Single-polarity programmable resistance-variable memory element
MICRON TECHNOLOGY INC94 citations98
US6858482B2Feb 22, 2005
Method of manufacture of programmable switching circuits and memory cells employing a glass layer
MICRON TECHNOLOGY INC99 citations98
US6855975B2Feb 15, 2005
Thin film diode integrated with chalcogenide memory cell
MICRON TECHNOLOGY INC93 citations98
US6437417B1Aug 20, 2002
Method for making shallow trenches for isolation
MICRON TECHNOLOGY INC92 citations98
US6221763B1Apr 24, 2001
Method of forming a metal seed layer for subsequent plating
MICRON TECHNOLOGY INC98 citations98
US6961277B2Nov 1, 2005
Method of refreshing a PCRAM memory device
MICRON TECHNOLOGY INC52 citations96
US6856002B2Feb 15, 2005
Graded GexSe100-x concentration in PCRAM
MICRON TECHNOLOGY INC36 citations96
US6809362B2Oct 26, 2004
Multiple data state memory cell
MICRON TECHNOLOGY INC36 citations96
US6727192B2Apr 27, 2004
Methods of metal doping a chalcogenide material
MICRON TECHNOLOGY INC46 citations96
US6710423B2Mar 23, 2004
Chalcogenide comprising device
MICRON TECHNOLOGY INC35 citations96
US6709887B2Mar 23, 2004
Method of forming a chalcogenide comprising device
MICRON TECHNOLOGY INC64 citations96
US6653193B2Nov 25, 2003
Resistance variable device
MICRON TECHNOLOGY INC42 citations96
US6646902B2Nov 11, 2003
Method of retaining memory state in a programmable conductor RAM
MICRON TECHNOLOGY INC46 citations96
US5445994AAug 29, 1995
Method for forming custom planar metal bonding pad connectors for semiconductor dice
MICRON TECHNOLOGY INC76 citations96
US6063712AMay 16, 2000
Oxide etch and method of etching
MICRON TECHNOLOGY INC250 citations94
US7989349B2Aug 2, 2011
Methods of manufacturing nanotubes having controlled characteristics
MICRON TECHNOLOGY INC14 citations93
US7518212B2Apr 14, 2009
Graded GexSe100-x concentration in PCRAM
MICRON TECHNOLOGY INC19 citations93
US7385868B2Jun 10, 2008
Method of refreshing a PCRAM memory device
MICRON TECHNOLOGY INC16 citations93
US7374174B2May 20, 2008
Small electrode for resistance variable devices
MICRON TECHNOLOGY INC30 citations93
US7315465B2Jan 1, 2008
Methods of operating and forming chalcogenide glass constant current devices
MICRON TECHNOLOGY INC12 citations93
US7276722B2Oct 2, 2007
Non-volatile memory structure
MICRON TECHNOLOGY INC15 citations93
US7139188B2Nov 21, 2006
Memory architecture and method of manufacture and operation thereof
MICRON TECHNOLOGY INC13 citations93
US7087454B2Aug 8, 2006
Fabrication of single polarity programmable resistance structure
MICRON TECHNOLOGY INC41 citations93
US7056762B2Jun 6, 2006
Methods to form a memory cell with metal-rich metal chalcogenide
MICRON TECHNOLOGY INC22 citations93
US7018863B2Mar 28, 2006
Method of manufacture of a resistance variable memory cell
MICRON TECHNOLOGY INC23 citations93
US7010644B2Mar 7, 2006
Software refreshed memory device and method
MICRON TECHNOLOGY INC18 citations93
US6953720B2Oct 11, 2005
Methods for forming chalcogenide glass-based memory elements
MICRON TECHNOLOGY INC27 citations93
US6946347B2Sep 20, 2005
Non-volatile memory structure
MICRON TECHNOLOGY INC22 citations93
US6912147B2Jun 28, 2005
Chalcogenide glass constant current device, and its method of fabrication and operation
MICRON TECHNOLOGY INC13 citations93
US6891749B2May 10, 2005
Resistance variable ‘on ’ memory
MICRON TECHNOLOGY INC44 citations93
US6867114B2Mar 15, 2005
Methods to form a memory cell with metal-rich metal chalcogenide
MICRON TECHNOLOGY INC40 citations93
US6867064B2Mar 15, 2005
Method to alter chalcogenide glass for improved switching characteristics
MICRON TECHNOLOGY INC26 citations93
US6864521B2Mar 8, 2005
Method to control silver concentration in a resistance variable memory element
MICRON TECHNOLOGY INC35 citations93
US6818481B2Nov 16, 2004
Method to manufacture a buried electrode PCRAM cell
MICRON TECHNOLOGY INC30 citations93
US6813176B2Nov 2, 2004
Method of retaining memory state in a programmable conductor RAM
MICRON TECHNOLOGY INC22 citations93
US6813178B2Nov 2, 2004
Chalcogenide glass constant current device, and its method of fabrication and operation
MICRON TECHNOLOGY INC29 citations93
US6751114B2Jun 15, 2004
Method for programming a memory cell
MICRON TECHNOLOGY INC32 citations93
US6737726B2May 18, 2004
Resistance variable device, analog memory device, and programmable memory cell
MICRON TECHNOLOGY INC18 citations93
US6489235B2Dec 3, 2002
Method of forming a metal seed layer for subsequent plating
MICRON TECHNOLOGY INC17 citations93
US6258729B1Jul 10, 2001
Oxide etching method and structures resulting from same
MICRON TECHNOLOGY INC37 citations93
APPLE INC
3 patentsShowing the top 50 of 155 patents by PatentIndex Score.