Inventor

KOHNO MASAYUKI

JP19 patents

⚠️ This page may combine multiple inventors who share the name “KOHNO MASAYUKI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

KOHNO MASAYUKI

TOKYO ELECTRON LTD

Plasma processing method and film forming method

Plasma cleaning method and plasma CVD method

RLSA CVD deposition control using halogen gas for hydrogen scavenging

Plasma processing apparatus

Temperature measuring method and plasma processing system

Plasma CVD method, method for forming silicon nitride film and method for manufacturing semiconductor device

Plasma etching method

Plasma processing apparatus

KAWAKAMI KOJI

Selective anticancer chimeric peptide comprising an EGF receptor-binding peptide and a cytotoxic peptide

Hsp9O-targeted anti-cancer chimeric peptide

Selective anticancer chimeric peptides which bind transferrin receptor

Selective anticancer chimeric peptides which bind neuropilin receptor

KOHNO MASAYUKI

Plasma CVD method, method for forming silicon nitride film and method for manufacturing semiconductor device

Plasma CVD method, method for forming silicon nitride film and method for manufacturing semiconductor device

Method for forming silicon nitride film, method for manufacturing nonvolatile semiconductor memory device, nonvolatile semiconductor memory device and plasma apparatus

Plasma CVD method, silicon nitride film formation method, semiconductor device manufacturing method, and plasma CVD apparatus

ENDOH TETSUO

MOS semiconductor memory device having charge storage region formed from stack of insulating films

Forming a MOS memory device having a dielectric film laminate as a charge accumulation region

HONDA MINORU

Forming a silicon nitride film by plasma CVD