Temperature measuring method and plasma processing system

Abstract

A temperature measuring method for measuring a temperature of a member corresponding to a measuring object arranged within a chamber of a plasma processing apparatus is provided. The temperature measuring method involves obtaining a function (f) for correcting a correction target temperature (T meas ) according to a measurement window temperature (T w ), the function (f) being computed based on the correction target temperature (T meas ) corresponding to a temperature of the measuring object measured via a measurement window arranged at the chamber, a reference temperature (T obj ) corresponding to a temperature of the measuring object measured without using the measurement window, and the measurement window temperature (T w ) corresponding to a temperature of the measurement window. The temperature measuring method further involves measuring the correction target temperature (T meas ), measuring the measurement window temperature (T w ), and correcting the correction target temperature (T meas ) according to the measurement window temperature (T w ) based on the obtained function (f).

What is claimed is: 
     
       1. A temperature measuring method for measuring a temperature of a member corresponding to a measuring object arranged within a chamber of a plasma processing apparatus, the temperature measuring method comprising:
 a function obtaining step of obtaining a function (f) for correcting a correction target temperature (T meas ) according to a measurement window temperature (T w ), the function (f) being computed based on the correction target temperature (T meas ) corresponding to a temperature of the measuring object measured via a measurement window arranged at the chamber, a reference temperature (T obj ) corresponding to a temperature of the measuring object measured without using the measurement window, and the measurement window temperature (T w ) corresponding to a temperature of the measurement window; 
 a first measuring step of measuring the correction target temperature (T meas ); 
 a second measuring step of measuring the measurement window temperature (T w ); 
 a correction step of correcting the correction target temperature (T meas ) measured in the first measuring step according to the measurement window temperature (T w ) measured in the second measuring step based on the obtained function (f), and 
 a step of repetitively measuring the correction tarp et temperature (T meas ) and the measurement window temperature (T w ), and repetitively correcting the measured correction target temperature (T meas ) using the function (f) and the measured measurement window temperature (T w ) until a corrected temperature (T meas ′) corresponding to a temperature of the measuring object corrected by the correction step reaches a target temperature corresponding to a temperature during processing or before/after processing of a previous plasma process performed on a previous lot by the plasma processing apparatus. 
 
     
     
       2. The temperature measuring method as claimed in  claim 1 , wherein the member corresponding to the measuring object arranged within the chamber of the plasma processing apparatus is at least one of a focus ring, a ceiling member, and a liner. 
     
     
       3. The temperature measuring method as claimed in  claim 1 , wherein the measurement window is made of at least one of yttria (Y 2 O 3 ), calcium fluoride (CaF 2 ), sapphire, quartz, silicon, and germanium. 
     
     
       4. The temperature measuring method as claimed in  claim 1 , wherein the temperature of the measurement window is measured by a thermocouple attached to the measurement window.