Inventor · disambiguated record
Masayuki Kohno
Also filed as: KOHNO MASAYUKI
15 granted patents·8 pending applications·611 citations·filing 2005–2015
90Inventor score
Top patents by PatentIndex Score
23 records- 0198US7771796B2Plasma processing method and film forming methodTOKYO ELECTRON LTD·Filed 2005·Granted Aug 10, 2010·504 cites·13 claims
- 0296US8366953B2Plasma cleaning method and plasma CVD methodTOKYO ELECTRON LTD·Filed 2007·Granted Feb 5, 2013·88 cites·14 claims
- 0383US8258571B2MOS semiconductor memory device having charge storage region formed from stack of insulating filmsENDOH TETSUO·Filed 2008·Granted Sep 4, 2012·11 cites·19 claims
- 0476US7763551B2RLSA CVD deposition control using halogen gas for hydrogen scavengingTOKYO ELECTRON LTD·Filed 2008·Granted Jul 27, 2010·2 cites·14 claims
- 0563US10312057B2Plasma processing apparatusTOKYO ELECTRON LTD·Filed 2015·Granted Jun 4, 2019·1 cites·5 claims
- 0663US8119545B2Forming a silicon nitride film by plasma CVDHONDA MINORU·Filed 2009·Granted Feb 21, 2012·2 cites·7 claims
- 0762US9412565B2Temperature measuring method and plasma processing systemTOKYO ELECTRON LTD·Filed 2015·Granted Aug 9, 2016·1 cites·4 claims
- 0862US9412607B2Plasma etching methodTOKYO ELECTRON LTD·Filed 2014·Granted Aug 9, 2016·1 cites·5 claims
- 0961US8138103B2Plasma CVD method, method for forming silicon nitride film and method for manufacturing semiconductor deviceKOHNO MASAYUKI·Filed 2007·Granted Mar 20, 2012·1 cites·14 claims
- 1055US8569186B2Plasma CVD method, method for forming silicon nitride film and method for manufacturing semiconductor deviceTOKYO ELECTRON LTD·Filed 2012·Granted Oct 29, 2013·0 cites·4 claims
- 1151US8329596B2Plasma CVD method, method for forming silicon nitride film and method for manufacturing semiconductor deviceKOHNO MASAYUKI·Filed 2012·Granted Dec 11, 2012·0 cites·13 claims
- 1247US2011206590A1Silicon oxide film, method for forming silicon oxide film, and plasma cvd apparatusTOKYO ELECTRON LTD·Filed 2009·Application pending·0 cites
- 1347US2011189862A1Silicon oxynitride film and process for production thereof, computer-readable storage medium, and plasma cvd deviceTOKYO ELECTRON LTD·Filed 2009·Application pending·0 cites
- 1446US8124484B2Forming a MOS memory device having a dielectric film laminate as a charge accumulation regionENDOH TETSUO·Filed 2009·Granted Feb 28, 2012·0 cites·10 claims
- 1546US2012126376A1Silicon dioxide film and process for production thereof, computer-readable storage medium, and plasma cvd deviceHONDA MINORU·Filed 2009·Application pending·0 cites
- 1646US2010140683A1Silicon nitride film and nonvolatile semiconductor memory deviceTOKYO ELECTRON LTD·Filed 2008·Application pending·0 cites
- 1745US8318614B2Method for forming silicon nitride film, method for manufacturing nonvolatile semiconductor memory device, nonvolatile semiconductor memory device and plasma apparatusKOHNO MASAYUKI·Filed 2008·Granted Nov 27, 2012·0 cites·14 claims
- 1843US8114790B2Plasma CVD method, silicon nitride film formation method, semiconductor device manufacturing method, and plasma CVD apparatusKOHNO MASAYUKI·Filed 2007·Granted Feb 14, 2012·0 cites·13 claims
- 1938US2011254078A1Method for depositing silicon nitride film, computer-readable storage medium, and plasma cvd deviceTOKYO ELECTRON LTD·Filed 2011·Application pending·0 cites
- 2037US2012153442A1Silicon nitride film and process for production thereof, computer-readable storage medium, and plasma cvd deviceHONDA MINORU·Filed 2011·Application pending·0 cites
- 2136US2012315745A1Crystalline silicon film forming method and plasma cvd apparatusKATAYAMA DAISUKE·Filed 2010·Application pending·0 cites
- 2236US2012208376A1Method of forming silicon nitride film and method of manufacturing semiconductor memory deviceHONDA MINORU·Filed 2010·Application pending·0 cites
- 2335US10504698B2Plasma processing apparatusTOKYO ELECTRON LTD·Filed 2015·Granted Dec 10, 2019·0 cites·8 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →