Inventor

KANAMORI KOHJI

JP120 patents

⚠️ This page may combine multiple inventors who share the name “KANAMORI KOHJI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

KANAMORI KOHJI

SAMSUNG ELECTRONICS CO LTD

Vertical memory devices and methods of manufacturing the same

Vertical memory devices and methods of manufacturing the same

Vertical non-volatile memory device and method for fabricating the same

Semiconductor device having vertical channel and air gap, and method of manufacturing thereof

Semiconductor device

Memory device with memory cell structure including ferroelectric data storage layer, and a first gate and a second gate

Vertical memory devices and methods of manufacturing the same

Semiconductor device including vertical channel layer

Semiconductor devices including upper and lower selectors

Three-dimensional semiconductor memory device

Memory device

Three-dimensional memory device including a string selection line gate electrode having a silicide layer

Semiconductor devices including upper and lower selectors

Semiconductor memory device including variable resistance layer

Vertical memory devices

Vertical memory devices

Vertical memory devices

Vertical memory devices

Semiconductor device for preventing defects between bit lines and channels

Method of writing data in nonvolatile memory device, with divided subpages or subblocks, and method of erasing data in nonvolatile memory device with divided subpages or subblocks

Vertical semiconductor devices and method of manufacturing the same

Three-dimensional memory device including a string selection line gate electrode having a silicide layer

Semiconductor device including vertical channel layer

Semiconductor devices with string select channel for improved upper connection

Three-dimensional semiconductor memory devices including through-interconnection structures

Semiconductor memory device having vertical supporter penetrating the gate stack structure and through dielectric pattern

NEC CORP

Semiconductor device with isolation insulating film tapered and method of manufacturing the same

Split gate flash memory with virtual ground array structure and method of fabricating the same

Flash memory and methods of writing and erasing the same as well as a method of forming the same

Nonvolatile memory and nonvolatile memory manufacturing method

Flash memory and manufacturing method therefor

Semiconductor memory and manufacturing method thereof

Semiconductor device with no step between well regions

Nonvolatile semiconductor memory device and method for manufacturing the same

Non-volatile semiconductor memory device and data erase method of non-volatile semiconductor memory device

Non-volatile semiconductor memory device having reduced current consumption

Method of making non-volatile semiconductor memory devices having large capacitance between floating and control gates

NEC ELECTRONICS CORP

Nonvolatile semiconductor memory device and method of programming in nonvolatile semiconductor memory device

Semiconductor device and its manufacturing method

Semiconductor memory device with a silicide layer formed on regions other than source regions

Semiconductor memory device

Semiconductor device of a charge storage type

KANAMORI KOHJI

Vertical memory device and method of manufacturing the same

Semiconductor memory device

Semiconductor devices including charge storage patterns

PARK JINTAEK

Three-dimensional semiconductor devices and methods of fabricating the same

Three-dimensional semiconductor devices and methods of fabricating the same

KIM KWANG SOO

Memory device

SON YONG HOON

Vertical memory devices

LEE JAEDUK

Three-dimensional semiconductor devices with current path selection structure