Inventor
Ma wei yu
TW24 patents
⚠️ This page may combine multiple inventors who share the name “Ma wei yu”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
17 patentsUS9035393B2May 19, 2015
Method and apparatus for forming an integrated circuit with a metalized resistor in a standard cell configuration
TAIWAN SEMICONDUCTOR MFG CO LTD32 citations94
US9172244B1Oct 27, 2015
Self biased electro-static discharge clamp (ESD) for power rail
TAIWAN SEMICONDUCTOR MFG CO LTD22 citations92
US9406607B2Aug 2, 2016
Device-manufacturing scheme for increasing the density of metal patterns in inter-layer dielectrics
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations82
US10269699B2Apr 23, 2019
Device-manufacturing scheme for increasing the density of metal patterns in inter-layer dielectrics
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations71
US9893010B2Feb 13, 2018
Device-manufacturing scheme for increasing the density of metal patterns in inter-layer dielectrics
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations71
US10991663B2Apr 27, 2021
Semiconductor device including dummy conductive cells
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations70
US9478533B2Oct 25, 2016
Method and apparatus for forming an integrated circuit with a metalized resistor in a standard cell configuration
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations63
US9472545B2Oct 18, 2016
Semiconductor arrangement with electrostatic discharge (ESD) protection
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations63
US11211376B2Dec 28, 2021
Three-dimensional integrated circuit having ESD protection circuit
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10943897B2Mar 9, 2021
Method of forming three-dimensional integrated circuit having ESD protection circuit
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12125809B2Oct 22, 2024
Semiconductor device including dummy conductive cells
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US11075162B2Jul 27, 2021
Device-manufacturing scheme for increasing the density of metal patterns in inter-layer dielectrics
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US10157975B2Dec 18, 2018
Method of manufacturing a semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9640605B2May 2, 2017
Semiconductor device, layout design and method for manufacturing a semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10629528B2Apr 21, 2020
Device-manufacturing scheme for increasing the density of metal patterns in inter-layer dielectrics
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations50
US10510692B2Dec 17, 2019
Semiconductor device including dummy conductive cells
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations49
US10043767B2Aug 7, 2018
Semiconductor device including dummy conductive cells
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations49
Ma wei yu
4 patentsUS9117677B2Aug 25, 2015
Semiconductor integrated circuit having a resistor and method of forming the same
Ma wei yu24 citations91
US8760828B2Jun 24, 2014
Electro-static discharge clamp (ESD) for NxVDD power rail
Ma wei yu21 citations91
US8569129B2Oct 29, 2013
Device-manufacturing scheme for increasing the density of metal patterns in inter-layer dielectrics
Ma wei yu9 citations81
US9124086B2Sep 1, 2015
Failsafe ESD protection
Ma wei yu0 citations51