Inventor
TSAI FANG WEN
TW24 patents
⚠️ This page may combine multiple inventors who share the name “TSAI FANG WEN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG
10 patentsUS8048810B2Nov 1, 2011
Method for metal gate N/P patterning
TAIWAN SEMICONDUCTOR MFG137 citations95
US7732344B1Jun 8, 2010
High selectivity etching process for metal gate N/P patterning
TAIWAN SEMICONDUCTOR MFG26 citations90
US6953608B2Oct 11, 2005
Solution for FSG induced metal corrosion & metal peeling defects with extra bias liner and smooth RF bias ramp up
TAIWAN SEMICONDUCTOR MFG31 citations87
US9299676B2Mar 29, 2016
Through silicon via structure
TAIWAN SEMICONDUCTOR MFG3 citations73
US7626245B2Dec 1, 2009
Extreme low-k dielectric film scheme for advanced interconnect
TAIWAN SEMICONDUCTOR MFG7 citations73
USRE42514EJul 5, 2011
Extreme low-K dielectric film scheme for advanced interconnects
TAIWAN SEMICONDUCTOR MFG2 citations62
US7465676B2Dec 16, 2008
Method for forming dielectric film to improve adhesion of low-k film
TAIWAN SEMICONDUCTOR MFG3 citations62
US9093314B2Jul 28, 2015
Copper bump structures having sidewall protection layers
TAIWAN SEMICONDUCTOR MFG3 citations61
US9099515B2Aug 4, 2015
Reconfigurable guide pin design for centering wafers having different sizes
TAIWAN SEMICONDUCTOR MFG0 citations52
US8952506B2Feb 10, 2015
Through silicon via structure
TAIWAN SEMICONDUCTOR MFG0 citations52
TAIWAN SEMICONDUCTOR MFG CO LTD
6 patentsUS10692764B2Jun 23, 2020
Alignment marks in substrate having through-substrate via (TSV)
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US9478480B2Oct 25, 2016
Alignment mark and method of formation
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations72
US10910267B2Feb 2, 2021
Alignment marks in substrate having through-substrate via (TSV)
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10163706B2Dec 25, 2018
Alignment marks in substrate having through-substrate via (TSV)
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US9997497B2Jun 12, 2018
Through silicon via structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9633900B2Apr 25, 2017
Method for through silicon via structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52