Inventor

Heo YeonCheol

KR13 patents

⚠️ This page may combine multiple inventors who share the name “Heo YeonCheol”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

12 patents

US11843051B2Dec 12, 2023

Field effect transistor including multiple aspect trapping ratio structures

SAMSUNG ELECTRONICS CO LTD2 citations72

US10211339B2Feb 19, 2019

Vertical transistor having a semiconductor pillar penetrating a silicide formed on the substrate surface

SAMSUNG ELECTRONICS CO LTD2 citations72

US10319715B2Jun 11, 2019

Semiconductor devices including separate doped regions

SAMSUNG ELECTRONICS CO LTD2 citations71

US10297687B2May 21, 2019

Semiconductor device including vertical-type field effect transistors and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD2 citations71

US11411111B2Aug 9, 2022

Field effect transistor including multiple aspect trapping ratio structures

SAMSUNG ELECTRONICS CO LTD0 citations61

US10950724B2Mar 16, 2021

Method of fabricating a semiconductor device including vertical-type field effect transistors

SAMSUNG ELECTRONICS CO LTD0 citations60

US10692858B2Jun 23, 2020

Semiconductor devices and methods of fabricating the same

SAMSUNG ELECTRONICS CO LTD1 citations60

US9953883B2Apr 24, 2018

Semiconductor device including a field effect transistor and method for manufacturing the same

SAMSUNG ELECTRONICS CO LTD1 citations60

US10734521B2Aug 4, 2020

Field effect transistor including multiple aspect trapping ratio structures

SAMSUNG ELECTRONICS CO LTD0 citations51

US9966377B2May 8, 2018

Semiconductor devices including fin-shaped active patterns in different conductivity type regions

SAMSUNG ELECTRONICS CO LTD1 citations51

US10714397B2Jul 14, 2020

Semiconductor device including an active pattern having a lower pattern and a pair of channel patterns disposed thereon and method for manufacturing the same

SAMSUNG ELECTRONICS CO LTD0 citations50

US10453756B2Oct 22, 2019

Method for manufacturing a semiconductor device including a pair of channel semiconductor patterns

SAMSUNG ELECTRONICS CO LTD0 citations50

CANTORO MIRCO

1 patent

US10181526B2Jan 15, 2019

Field effect transistor including multiple aspect ratio trapping structures

CANTORO MIRCO3 citations70