Inventor
SHIBIB MUHAMMED AYMAN
US36 patents
⚠️ This page may combine multiple inventors who share the name “SHIBIB MUHAMMED AYMAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
AGERE SYSTEMS INC
19 patentsUS7148540B2Dec 12, 2006
Graded conductive structure for use in a metal-oxide-semiconductor device
AGERE SYSTEMS INC65 citations98
US6927453B2Aug 9, 2005
Metal-oxide-semiconductor device including a buried lightly-doped drain region
AGERE SYSTEMS INC59 citations96
US7005703B2Feb 28, 2006
Metal-oxide-semiconductor device having improved performance and reliability
AGERE SYSTEMS INC28 citations93
US6890804B1May 10, 2005
Metal-oxide-semiconductor device formed in silicon-on-insulator
AGERE SYSTEMS INC38 citations93
US7820517B2Oct 26, 2010
Control of hot carrier injection in a metal-oxide semiconductor device
AGERE SYSTEMS INC17 citations91
US6828628B2Dec 7, 2004
Diffused MOS devices with strained silicon portions and methods for forming same
AGERE SYSTEMS INC25 citations91
US7087959B2Aug 8, 2006
Metal-oxide-semiconductor device having an enhanced shielding structure
AGERE SYSTEMS INC17 citations84
US7279744B2Oct 9, 2007
Control of hot carrier injection in a metal-oxide semiconductor device
AGERE SYSTEMS INC8 citations72
US7579245B2Aug 25, 2009
Dual-gate metal-oxide-semiconductor device
AGERE SYSTEMS INC2 citations63
US7329922B2Feb 12, 2008
Dual-gate metal-oxide semiconductor device
AGERE SYSTEMS INC5 citations63
US7297606B2Nov 20, 2007
Metal-oxide-semiconductor device including a buried lightly-doped drain region
AGERE SYSTEMS INC3 citations63
US7190563B2Mar 13, 2007
Electrostatic discharge protection in a semiconductor device
AGERE SYSTEMS INC3 citations63
US7067890B2Jun 27, 2006
Thick oxide region in a semiconductor device
AGERE SYSTEMS INC2 citations63
US6576506B2Jun 10, 2003
Electrostatic discharge protection in double diffused MOS transistors
AGERE SYSTEMS INC5 citations63
US7041561B2May 9, 2006
Enhanced substrate contact for a semiconductor device
AGERE SYSTEMS INC5 citations62
US6762457B2Jul 13, 2004
LDMOS device having a tapered oxide
AGERE SYSTEMS INC3 citations62
US6506641B1Jan 14, 2003
Use of selective oxidation to improve LDMOS power transistors
AGERE SYSTEMS INC2 citations62
US7335565B2Feb 26, 2008
Metal-oxide-semiconductor device having improved performance and reliability
AGERE SYSTEMS INC1 citations52
US6821831B2Nov 23, 2004
Electrostatic discharge protection in double diffused MOS transistors
AGERE SYSTEMS INC1 citations52
LUCENT TECHNOLOGIES INC
9 patentsUS6228750B1May 8, 2001
Method of doping a semiconductor surface
LUCENT TECHNOLOGIES INC30 citations92
US6140170AOct 31, 2000
Manufacture of complementary MOS and bipolar integrated circuits
LUCENT TECHNOLOGIES INC13 citations74
US5949128ASep 7, 1999
Bipolar transistor with MOS-controlled protection for reverse-biased emitter-base junction
LUCENT TECHNOLOGIES INC5 citations74
US5894154AApr 13, 1999
P-channel MOS transistor
LUCENT TECHNOLOGIES INC8 citations74
US5773338AJun 30, 1998
Bipolar transistor with MOS-controlled protection for reverse-biased emitter-based junction
LUCENT TECHNOLOGIES INC8 citations74
US5670396ASep 23, 1997
Method of forming a DMOS-controlled lateral bipolar transistor
LUCENT TECHNOLOGIES INC13 citations74
US6013934AJan 11, 2000
Semiconductor structure for thermal shutdown protection
LUCENT TECHNOLOGIES INC10 citations73
US5959342ASep 28, 1999
Semiconductor device having a high voltage termination improvement
LUCENT TECHNOLOGIES INC3 citations63
US5728607AMar 17, 1998
Method of making a P-channel bipolar transistor
LUCENT TECHNOLOGIES INC7 citations63