Inventor

CAMPBELL KRISTY A

US128 patents

⚠️ This page may combine multiple inventors who share the name “CAMPBELL KRISTY A”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

CAMPBELL KRISTY A

MICRON TECHNOLOGY INC

Resistance variable memory with temperature tolerant materials

Silver-selenide/chalcogenide glass stack for resistance variable memory

Phase change memory cell and method of formation

Amorphous carbon-based non-volatile memory

Method of forming chalcogenide comprising devices

Memory device and methods of controlling resistance variation and resistance profile drift

Single-polarity programmable resistance-variable memory element

Method of refreshing a PCRAM memory device

Method of forming chalcogenide comprising devices, method of forming a programmable memory cell of memory circuitry, and a chalcogenide comprising device

Graded GexSe100-x concentration in PCRAM

Methods and apparatus for resistance variable material cells

Method of retaining memory state in a programmable conductor RAM

Method of forming a memory device incorporating a resistance-variable chalcogenide element

Layered resistance variable memory device and method of fabrication

Phase change memory cell and method of formation

Amorphous carbon-based non-volatile memory

Silver-selenide/chalcogenide glass stack for resistance variable memory

Structure for amorphous carbon based non-volatile memory

Resistance variable memory with temperature tolerant materials

Graded GexSe100-x concentration in PCRAM

Resistance variable memory device with nanoparticle electrode and method of fabrication

Resistance variable memory with temperature tolerant materials

Method of refreshing a PCRAM memory device

Method of forming a PCRAM device incorporating a resistance-variable chalocogenide element

Resistance variable memory device and method of fabrication

Structure for amorphous carbon based non-volatile memory

Differential negative resistance memory

Memory device with switching glass layer

Methods of operating and forming chalcogenide glass constant current devices

Structure for amorphous carbon based non-volatile memory

Resistance variable memory device and method of fabrication

Resistance variable memory device and method of fabrication

Layered resistance variable memory device and method of fabrication

Fabrication of single polarity programmable resistance structure

Method of forming a programmable memory cell and chalcogenide structure

Methods to form a memory cell with metal-rich metal chalcogenide

Differential negative resistance memory

Method and apparatus for resistance variable material cells

Method of manufacture of a resistance variable memory cell

Assemblies displaying differential negative resistance

Non-volatile resistance variable devices

Methods for forming chalcogenide glass-based memory elements

Diode/superionic conductor/polymer memory structure

Chalcogenide glass constant current device, and its method of fabrication and operation

Resistance variable ‘on ’ memory

Stoichiometry for chalcogenide glasses useful for memory devices and method of formation

Methods to form a memory cell with metal-rich metal chalcogenide

Method to alter chalcogenide glass for improved switching characteristics

Method to control silver concentration in a resistance variable memory element

UNIV BOISE STATE

Forced ion migration for chalcogenide phase change memory device