Inventor
KOLAGUNTA VENKAT R
US18 patents
Patents
18 patentsUS7018901B1Mar 28, 2006
Method for forming a semiconductor device having a strained channel and a heterojunction source/drain
FREESCALE SEMICONDUCTOR INC105 citations97
US7410876B1Aug 12, 2008
Methodology to reduce SOI floating-body effect
FREESCALE SEMICONDUCTOR INC31 citations92
US7067868B2Jun 27, 2006
Double gate device having a heterojunction source/drain and strained channel
FREESCALE SEMICONDUCTOR INC39 citations92
US7799650B2Sep 21, 2010
Method for making a transistor with a stressor
FREESCALE SEMICONDUCTOR INC27 citations91
US7727870B2Jun 1, 2010
Method of making a semiconductor device using a stressor
FREESCALE SEMICONDUCTOR INC13 citations83
US7514313B2Apr 7, 2009
Process of forming an electronic device including a seed layer and a semiconductor layer selectively formed over the seed layer
FREESCALE SEMICONDUCTOR INC9 citations83
US7420202B2Sep 2, 2008
Electronic device including a transistor structure having an active region adjacent to a stressor layer and a process for forming the electronic device
FREESCALE SEMICONDUCTOR INC13 citations83
US7161199B2Jan 9, 2007
Transistor structure with stress modification and capacitive reduction feature in a width direction and method thereof
FREESCALE SEMICONDUCTOR INC12 citations83
US7504289B2Mar 17, 2009
Process for forming an electronic device including transistor structures with sidewall spacers
FREESCALE SEMICONDUCTOR INC7 citations73
US7144784B2Dec 5, 2006
Method of forming a semiconductor device and structure thereof
FREESCALE SEMICONDUCTOR INC9 citations73
US7843011B2Nov 30, 2010
Electronic device including insulating layers having different strains
FREESCALE SEMICONDUCTOR INC2 citations63
US7714318B2May 11, 2010
Electronic device including a transistor structure having an active region adjacent to a stressor layer
FREESCALE SEMICONDUCTOR INC5 citations62
US7678698B2Mar 16, 2010
Method of forming a semiconductor device with multiple tensile stressor layers
FREESCALE SEMICONDUCTOR INC3 citations62
US7479465B2Jan 20, 2009
Transfer of stress to a layer
FREESCALE SEMICONDUCTOR INC3 citations61
US7282426B2Oct 16, 2007
Method of forming a semiconductor device having asymmetric dielectric regions and structure thereof
FREESCALE SEMICONDUCTOR INC5 citations61
US8021957B2Sep 20, 2011
Process of forming an electronic device including insulating layers having different strains
FREESCALE SEMICONDUCTOR INC0 citations52
US7534674B2May 19, 2009
Method of making a semiconductor device with a stressor
FREESCALE SEMICONDUCTOR INC1 citations52
US7560318B2Jul 14, 2009
Process for forming an electronic device including semiconductor layers having different stresses
FREESCALE SEMICONDUCTOR INC0 citations41