P

Inventor

JEON HEE-SEOG

KR54 patents
⚠️ This page may combine multiple inventors who share the name “JEON HEE-SEOG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

43 patents
US7339232B2Mar 4, 2008

Semiconductor device having multi-bit nonvolatile memory cell and methods of fabricating the same

SAMSUNG ELECTRONICS CO LTD15 citations92
US7078295B2Jul 18, 2006

Self-aligned split-gate nonvolatile memory structure and a method of making the same

SAMSUNG ELECTRONICS CO LTD20 citations92
US9082865B2Jul 14, 2015

Split-gate type nonvolatile memory device, semiconductor device having split-type nonvolatile memory device embedded therein, and methods of forming the same

SAMSUNG ELECTRONICS CO LTD7 citations84
US7928492B2Apr 19, 2011

Non-volatile memory integrated circuit device and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD10 citations84
US7553725B2Jun 30, 2009

Nonvolatile memory devices and methods of fabricating the same

SAMSUNG ELECTRONICS CO LTD8 citations84
US7492002B2Feb 17, 2009

Non-volatile memory device with a select gate electrode and a control gate electrode formed on a floating gate

SAMSUNG ELECTRONICS CO LTD10 citations84
US7315057B2Jan 1, 2008

Split gate non-volatile memory devices and methods of forming same

SAMSUNG ELECTRONICS CO LTD10 citations84
US7271061B2Sep 18, 2007

Method of fabricating non-volatile memory

SAMSUNG ELECTRONICS CO LTD14 citations84
US7064378B2Jun 20, 2006

Local-length nitride SONOS device having self-aligned ONO structure and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD11 citations84
US7768061B2Aug 3, 2010

Self aligned 1 bit local SONOS memory cell

SAMSUNG ELECTRONICS CO LTD6 citations74
US7345336B2Mar 18, 2008

Semiconductor memory device having self-aligned charge trapping layer

SAMSUNG ELECTRONICS CO LTD7 citations74
US7176085B2Feb 13, 2007

Method of manufacturing split gate type nonvolatile memory device

SAMSUNG ELECTRONICS CO LTD7 citations74
US7037783B2May 2, 2006

Method of manufacturing split gate type nonvolatile memory device having self-aligned spacer type control gate

SAMSUNG ELECTRONICS CO LTD6 citations74
US6255716B1Jul 3, 2001

Bipolar junction transistors having base electrode extensions

SAMSUNG ELECTRONICS CO LTD10 citations74
US7557404B2Jul 7, 2009

Nonvolatile memory devices and methods of forming the same

SAMSUNG ELECTRONICS CO LTD6 citations73
US7015541B2Mar 21, 2006

Memory cell including stacked gate sidewall patterns and method for fabricating same

SAMSUNG ELECTRONICS CO LTD9 citations73
US7697336B2Apr 13, 2010

Non-volatile memory device and method of operating the same

SAMSUNG ELECTRONICS CO LTD7 citations71
US7791951B2Sep 7, 2010

Methods of operating non-volatile memory device

SAMSUNG ELECTRONICS CO LTD2 citations63
US7521750B2Apr 21, 2009

Semiconductor device having multi-bit nonvolatile memory cell and methods of fabricating the same

SAMSUNG ELECTRONICS CO LTD3 citations63
US7515468B2Apr 7, 2009

Nonvolatile memory device

SAMSUNG ELECTRONICS CO LTD3 citations63
US7351636B2Apr 1, 2008

Methods of forming split-gate non-volatile memory cells including raised oxide layers on field oxide regions

SAMSUNG ELECTRONICS CO LTD2 citations63
US7238572B2Jul 3, 2007

Method of manufacturing EEPROM cell

SAMSUNG ELECTRONICS CO LTD3 citations63
US7148110B2Dec 12, 2006

Local-length nitride SONOS device having self-aligned ONO structure and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD3 citations63
US7141473B2Nov 28, 2006

Self-aligned 1 bit local SONOS memory cell and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD5 citations63
US5747374AMay 5, 1998

Methods of fabricating bipolar transistors having separately formed intrinsic base and link-up regions

SAMSUNG ELECTRONICS CO LTD5 citations63
US7733696B2Jun 8, 2010

Non-volatile memory devices including local control gates on multiple isolated well regions and related methods and systems

SAMSUNG ELECTRONICS CO LTD5 citations62
US7602008B2Oct 13, 2009

Split gate non-volatile memory devices and methods of forming the same

SAMSUNG ELECTRONICS CO LTD6 citations62
US7462533B2Dec 9, 2008

Memory cell and method for fabricating same

SAMSUNG ELECTRONICS CO LTD4 citations62
US7320913B2Jan 22, 2008

Methods of forming split-gate non-volatile memory devices

SAMSUNG ELECTRONICS CO LTD2 citations62
US7512003B2Mar 31, 2009

Non-volatile memory device

SAMSUNG ELECTRONICS CO LTD6 citations61
US7422949B2Sep 9, 2008

High voltage transistor and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD3 citations60
US7221028B2May 22, 2007

High voltage transistor and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD5 citations60
US7800158B2Sep 21, 2010

Semiconductor device and method of forming the same

SAMSUNG ELECTRONICS CO LTD1 citations52
US7602004B2Oct 13, 2009

Semiconductor device and methods for forming the same

SAMSUNG ELECTRONICS CO LTD0 citations52
US7586146B2Sep 8, 2009

Non-volatile memory and method of fabricating same

SAMSUNG ELECTRONICS CO LTD1 citations52
US7531410B2May 12, 2009

Semiconductor flash memory device and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD0 citations52
US7492000B2Feb 17, 2009

Self-aligned split-gate nonvolatile memory structure and a method of making the same

SAMSUNG ELECTRONICS CO LTD1 citations52
US6048773AApr 11, 2000

Methods of forming bipolar junction transistors having preferred base electrode extensions and transistors formed thereby

SAMSUNG ELECTRONICS CO LTD1 citations52
US8053342B2Nov 8, 2011

Mask ROM device, semiconductor device including the mask ROM device, and methods of fabricating mask ROM device and semiconductor device

SAMSUNG ELECTRONICS CO LTD1 citations51
US7799635B2Sep 21, 2010

Methods of forming nonvolatile memory devices

SAMSUNG ELECTRONICS CO LTD1 citations51
US7777256B2Aug 17, 2010

Mask ROM device, semiconductor device including the mask ROM device, and methods of fabricating mask ROM device and semiconductor device

SAMSUNG ELECTRONICS CO LTD0 citations51
US7638387B2Dec 29, 2009

Mask ROM and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD0 citations51
US7696561B2Apr 13, 2010

Non-volatile memory device, method of manufacturing the same and method of operating the same

SAMSUNG ELECTRONICS CO LTD1 citations50

SEO BO-YOUNG

3 patents

JEONG CHANG-MIN

1 patent

JEON HEE-SEOG

1 patent

RYU JI-DO

1 patent

CHOI SUNG-GON

1 patent

Showing the top 50 of 54 patents by PatentIndex Score.