Inventor
JEON HEE-SEOG
KR54 patents
⚠️ This page may combine multiple inventors who share the name “JEON HEE-SEOG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
43 patentsUS7339232B2Mar 4, 2008
Semiconductor device having multi-bit nonvolatile memory cell and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD15 citations92
US7078295B2Jul 18, 2006
Self-aligned split-gate nonvolatile memory structure and a method of making the same
SAMSUNG ELECTRONICS CO LTD20 citations92
US9082865B2Jul 14, 2015
Split-gate type nonvolatile memory device, semiconductor device having split-type nonvolatile memory device embedded therein, and methods of forming the same
SAMSUNG ELECTRONICS CO LTD7 citations84
US7928492B2Apr 19, 2011
Non-volatile memory integrated circuit device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD10 citations84
US7553725B2Jun 30, 2009
Nonvolatile memory devices and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD8 citations84
US7492002B2Feb 17, 2009
Non-volatile memory device with a select gate electrode and a control gate electrode formed on a floating gate
SAMSUNG ELECTRONICS CO LTD10 citations84
US7315057B2Jan 1, 2008
Split gate non-volatile memory devices and methods of forming same
SAMSUNG ELECTRONICS CO LTD10 citations84
US7271061B2Sep 18, 2007
Method of fabricating non-volatile memory
SAMSUNG ELECTRONICS CO LTD14 citations84
US7064378B2Jun 20, 2006
Local-length nitride SONOS device having self-aligned ONO structure and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD11 citations84
US7768061B2Aug 3, 2010
Self aligned 1 bit local SONOS memory cell
SAMSUNG ELECTRONICS CO LTD6 citations74
US7345336B2Mar 18, 2008
Semiconductor memory device having self-aligned charge trapping layer
SAMSUNG ELECTRONICS CO LTD7 citations74
US7176085B2Feb 13, 2007
Method of manufacturing split gate type nonvolatile memory device
SAMSUNG ELECTRONICS CO LTD7 citations74
US7037783B2May 2, 2006
Method of manufacturing split gate type nonvolatile memory device having self-aligned spacer type control gate
SAMSUNG ELECTRONICS CO LTD6 citations74
US6255716B1Jul 3, 2001
Bipolar junction transistors having base electrode extensions
SAMSUNG ELECTRONICS CO LTD10 citations74
US7557404B2Jul 7, 2009
Nonvolatile memory devices and methods of forming the same
SAMSUNG ELECTRONICS CO LTD6 citations73
US7015541B2Mar 21, 2006
Memory cell including stacked gate sidewall patterns and method for fabricating same
SAMSUNG ELECTRONICS CO LTD9 citations73
US7697336B2Apr 13, 2010
Non-volatile memory device and method of operating the same
SAMSUNG ELECTRONICS CO LTD7 citations71
US7791951B2Sep 7, 2010
Methods of operating non-volatile memory device
SAMSUNG ELECTRONICS CO LTD2 citations63
US7521750B2Apr 21, 2009
Semiconductor device having multi-bit nonvolatile memory cell and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD3 citations63
US7515468B2Apr 7, 2009
Nonvolatile memory device
SAMSUNG ELECTRONICS CO LTD3 citations63
US7351636B2Apr 1, 2008
Methods of forming split-gate non-volatile memory cells including raised oxide layers on field oxide regions
SAMSUNG ELECTRONICS CO LTD2 citations63
US7238572B2Jul 3, 2007
Method of manufacturing EEPROM cell
SAMSUNG ELECTRONICS CO LTD3 citations63
US7148110B2Dec 12, 2006
Local-length nitride SONOS device having self-aligned ONO structure and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD3 citations63
US7141473B2Nov 28, 2006
Self-aligned 1 bit local SONOS memory cell and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD5 citations63
US5747374AMay 5, 1998
Methods of fabricating bipolar transistors having separately formed intrinsic base and link-up regions
SAMSUNG ELECTRONICS CO LTD5 citations63
US7733696B2Jun 8, 2010
Non-volatile memory devices including local control gates on multiple isolated well regions and related methods and systems
SAMSUNG ELECTRONICS CO LTD5 citations62
US7602008B2Oct 13, 2009
Split gate non-volatile memory devices and methods of forming the same
SAMSUNG ELECTRONICS CO LTD6 citations62
US7462533B2Dec 9, 2008
Memory cell and method for fabricating same
SAMSUNG ELECTRONICS CO LTD4 citations62
US7320913B2Jan 22, 2008
Methods of forming split-gate non-volatile memory devices
SAMSUNG ELECTRONICS CO LTD2 citations62
US7512003B2Mar 31, 2009
Non-volatile memory device
SAMSUNG ELECTRONICS CO LTD6 citations61
US7422949B2Sep 9, 2008
High voltage transistor and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD3 citations60
US7221028B2May 22, 2007
High voltage transistor and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD5 citations60
US7800158B2Sep 21, 2010
Semiconductor device and method of forming the same
SAMSUNG ELECTRONICS CO LTD1 citations52
US7602004B2Oct 13, 2009
Semiconductor device and methods for forming the same
SAMSUNG ELECTRONICS CO LTD0 citations52
US7586146B2Sep 8, 2009
Non-volatile memory and method of fabricating same
SAMSUNG ELECTRONICS CO LTD1 citations52
US7531410B2May 12, 2009
Semiconductor flash memory device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations52
US7492000B2Feb 17, 2009
Self-aligned split-gate nonvolatile memory structure and a method of making the same
SAMSUNG ELECTRONICS CO LTD1 citations52
US6048773AApr 11, 2000
Methods of forming bipolar junction transistors having preferred base electrode extensions and transistors formed thereby
SAMSUNG ELECTRONICS CO LTD1 citations52
US8053342B2Nov 8, 2011
Mask ROM device, semiconductor device including the mask ROM device, and methods of fabricating mask ROM device and semiconductor device
SAMSUNG ELECTRONICS CO LTD1 citations51
US7799635B2Sep 21, 2010
Methods of forming nonvolatile memory devices
SAMSUNG ELECTRONICS CO LTD1 citations51
US7777256B2Aug 17, 2010
Mask ROM device, semiconductor device including the mask ROM device, and methods of fabricating mask ROM device and semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations51
US7638387B2Dec 29, 2009
Mask ROM and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations51
US7696561B2Apr 13, 2010
Non-volatile memory device, method of manufacturing the same and method of operating the same
SAMSUNG ELECTRONICS CO LTD1 citations50
SEO BO-YOUNG
3 patentsUS9330745B2May 3, 2016
Magnetic memory devices including magnetic memory cells having opposite magnetization directions
SEO BO-YOUNG2 citations62
US8111553B2Feb 7, 2012
Non-volatile semiconductor memory device in which program disturb is reduced and method of programming the same
SEO BO-YOUNG3 citations61
US9318181B2Apr 19, 2016
Magnetic memory devices including shared lines
SEO BO-YOUNG1 citations51
JEONG CHANG-MIN
1 patentJEON HEE-SEOG
1 patentRYU JI-DO
1 patentCHOI SUNG-GON
1 patentShowing the top 50 of 54 patents by PatentIndex Score.