Inventor
YOON SEUNG-BEOM
KR48 patents
⚠️ This page may combine multiple inventors who share the name “YOON SEUNG-BEOM”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
42 patentsUS7285820B2Oct 23, 2007
Flash memory device using semiconductor fin and method thereof
SAMSUNG ELECTRONICS CO LTD263 citations99
US7323740B2Jan 29, 2008
Single chip data processing device with embedded nonvolatile memory and method thereof
SAMSUNG ELECTRONICS CO LTD58 citations97
US7078295B2Jul 18, 2006
Self-aligned split-gate nonvolatile memory structure and a method of making the same
SAMSUNG ELECTRONICS CO LTD20 citations92
US7936003B2May 3, 2011
Semiconductor device having transistor with vertical gate electrode and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD7 citations84
US7514739B2Apr 7, 2009
Nonvolatile semiconductor device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD11 citations84
US7492002B2Feb 17, 2009
Non-volatile memory device with a select gate electrode and a control gate electrode formed on a floating gate
SAMSUNG ELECTRONICS CO LTD10 citations84
US7315057B2Jan 1, 2008
Split gate non-volatile memory devices and methods of forming same
SAMSUNG ELECTRONICS CO LTD10 citations84
US7271061B2Sep 18, 2007
Method of fabricating non-volatile memory
SAMSUNG ELECTRONICS CO LTD14 citations84
US7172938B2Feb 6, 2007
Method of manufacturing a semiconductor memory device
SAMSUNG ELECTRONICS CO LTD10 citations84
US7064378B2Jun 20, 2006
Local-length nitride SONOS device having self-aligned ONO structure and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD11 citations84
US7768061B2Aug 3, 2010
Self aligned 1 bit local SONOS memory cell
SAMSUNG ELECTRONICS CO LTD6 citations74
US7345336B2Mar 18, 2008
Semiconductor memory device having self-aligned charge trapping layer
SAMSUNG ELECTRONICS CO LTD7 citations74
US7256444B2Aug 14, 2007
Local SONOS-type nonvolatile memory device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD8 citations74
US7199421B2Apr 3, 2007
Sonos device and methods of manufacturing the same
SAMSUNG ELECTRONICS CO LTD7 citations74
US7176085B2Feb 13, 2007
Method of manufacturing split gate type nonvolatile memory device
SAMSUNG ELECTRONICS CO LTD7 citations74
US7037783B2May 2, 2006
Method of manufacturing split gate type nonvolatile memory device having self-aligned spacer type control gate
SAMSUNG ELECTRONICS CO LTD6 citations74
US7037781B2May 2, 2006
Local SONOS-type nonvolatile memory device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD10 citations74
US7791951B2Sep 7, 2010
Methods of operating non-volatile memory device
SAMSUNG ELECTRONICS CO LTD2 citations63
US7411243B2Aug 12, 2008
Nonvolatile semiconductor device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD5 citations63
US7351636B2Apr 1, 2008
Methods of forming split-gate non-volatile memory cells including raised oxide layers on field oxide regions
SAMSUNG ELECTRONICS CO LTD2 citations63
US7238572B2Jul 3, 2007
Method of manufacturing EEPROM cell
SAMSUNG ELECTRONICS CO LTD3 citations63
US7192833B2Mar 20, 2007
Flash memory device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD4 citations63
US7190024B2Mar 13, 2007
Method of manufacturing a thin dielectric layer using a heat treatment and a semiconductor device formed using the method
SAMSUNG ELECTRONICS CO LTD2 citations63
US7160777B2Jan 9, 2007
Split-gate nonvolatile memory device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD6 citations63
US7148110B2Dec 12, 2006
Local-length nitride SONOS device having self-aligned ONO structure and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD3 citations63
US7141473B2Nov 28, 2006
Self-aligned 1 bit local SONOS memory cell and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD5 citations63
US7602008B2Oct 13, 2009
Split gate non-volatile memory devices and methods of forming the same
SAMSUNG ELECTRONICS CO LTD6 citations62
US7598139B2Oct 6, 2009
Single chip data processing device with embedded nonvolatile memory and method thereof
SAMSUNG ELECTRONICS CO LTD3 citations62
US7432159B2Oct 7, 2008
Electrically erasable programmable read-only memory (EEPROM) device and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD2 citations62
US7320913B2Jan 22, 2008
Methods of forming split-gate non-volatile memory devices
SAMSUNG ELECTRONICS CO LTD2 citations62
US7352026B2Apr 1, 2008
EEPROM cell and EEPROM device with high integration and low source resistance and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD5 citations61
US7422949B2Sep 9, 2008
High voltage transistor and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD3 citations60
US7256448B2Aug 14, 2007
Split gate type nonvolatile semiconductor memory device, and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD3 citations60
US7221028B2May 22, 2007
High voltage transistor and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD5 citations60
US7029974B2Apr 18, 2006
Split gate type nonvolatile semiconductor memory device, and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD3 citations60
US7588983B2Sep 15, 2009
EEPROM cell and EEPROM device with high integration and low source resistance and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD2 citations59
US7586146B2Sep 8, 2009
Non-volatile memory and method of fabricating same
SAMSUNG ELECTRONICS CO LTD1 citations52
US7492000B2Feb 17, 2009
Self-aligned split-gate nonvolatile memory structure and a method of making the same
SAMSUNG ELECTRONICS CO LTD1 citations52
US7397079B2Jul 8, 2008
Non-volatile memory device and methods of forming the same
SAMSUNG ELECTRONICS CO LTD0 citations52
US7041557B2May 9, 2006
Method of manufacturing a thin dielectric layer using a heat treatment and a semiconductor device formed using the method
SAMSUNG ELECTRONICS CO LTD0 citations52
US7589376B2Sep 15, 2009
Electrically erasable programmable read-only memory (EEPROM) device and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations51
US7429766B2Sep 30, 2008
Split gate type nonvolatile memory device
SAMSUNG ELECTRONICS CO LTD0 citations42
HYUNDAI MOTOR CO LTD
4 patentsUS11656292B2May 23, 2023
Apparatus and method for detecting abnormality in battery
HYUNDAI MOTOR CO LTD3 citations66
US12206076B2Jan 21, 2025
Apparatus for evaluating insulation of secondary battery
HYUNDAI MOTOR CO LTD1 citations56
US12095298B2Sep 17, 2024
Apparatus for management of a battery, vehicle system having the same and method thereof
HYUNDAI MOTOR CO LTD0 citations56
US12347892B2Jul 1, 2025
Battery module having a cell-unit monitoring structure and monitoring system thereof
HYUNDAI MOTOR CO LTD0 citations44