P

Inventor

YOON SEUNG-BEOM

KR48 patents
⚠️ This page may combine multiple inventors who share the name “YOON SEUNG-BEOM”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

42 patents
US7285820B2Oct 23, 2007

Flash memory device using semiconductor fin and method thereof

SAMSUNG ELECTRONICS CO LTD263 citations99
US7323740B2Jan 29, 2008

Single chip data processing device with embedded nonvolatile memory and method thereof

SAMSUNG ELECTRONICS CO LTD58 citations97
US7078295B2Jul 18, 2006

Self-aligned split-gate nonvolatile memory structure and a method of making the same

SAMSUNG ELECTRONICS CO LTD20 citations92
US7936003B2May 3, 2011

Semiconductor device having transistor with vertical gate electrode and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD7 citations84
US7514739B2Apr 7, 2009

Nonvolatile semiconductor device and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD11 citations84
US7492002B2Feb 17, 2009

Non-volatile memory device with a select gate electrode and a control gate electrode formed on a floating gate

SAMSUNG ELECTRONICS CO LTD10 citations84
US7315057B2Jan 1, 2008

Split gate non-volatile memory devices and methods of forming same

SAMSUNG ELECTRONICS CO LTD10 citations84
US7271061B2Sep 18, 2007

Method of fabricating non-volatile memory

SAMSUNG ELECTRONICS CO LTD14 citations84
US7172938B2Feb 6, 2007

Method of manufacturing a semiconductor memory device

SAMSUNG ELECTRONICS CO LTD10 citations84
US7064378B2Jun 20, 2006

Local-length nitride SONOS device having self-aligned ONO structure and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD11 citations84
US7768061B2Aug 3, 2010

Self aligned 1 bit local SONOS memory cell

SAMSUNG ELECTRONICS CO LTD6 citations74
US7345336B2Mar 18, 2008

Semiconductor memory device having self-aligned charge trapping layer

SAMSUNG ELECTRONICS CO LTD7 citations74
US7256444B2Aug 14, 2007

Local SONOS-type nonvolatile memory device and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD8 citations74
US7199421B2Apr 3, 2007

Sonos device and methods of manufacturing the same

SAMSUNG ELECTRONICS CO LTD7 citations74
US7176085B2Feb 13, 2007

Method of manufacturing split gate type nonvolatile memory device

SAMSUNG ELECTRONICS CO LTD7 citations74
US7037783B2May 2, 2006

Method of manufacturing split gate type nonvolatile memory device having self-aligned spacer type control gate

SAMSUNG ELECTRONICS CO LTD6 citations74
US7037781B2May 2, 2006

Local SONOS-type nonvolatile memory device and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD10 citations74
US7791951B2Sep 7, 2010

Methods of operating non-volatile memory device

SAMSUNG ELECTRONICS CO LTD2 citations63
US7411243B2Aug 12, 2008

Nonvolatile semiconductor device and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD5 citations63
US7351636B2Apr 1, 2008

Methods of forming split-gate non-volatile memory cells including raised oxide layers on field oxide regions

SAMSUNG ELECTRONICS CO LTD2 citations63
US7238572B2Jul 3, 2007

Method of manufacturing EEPROM cell

SAMSUNG ELECTRONICS CO LTD3 citations63
US7192833B2Mar 20, 2007

Flash memory device and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD4 citations63
US7190024B2Mar 13, 2007

Method of manufacturing a thin dielectric layer using a heat treatment and a semiconductor device formed using the method

SAMSUNG ELECTRONICS CO LTD2 citations63
US7160777B2Jan 9, 2007

Split-gate nonvolatile memory device and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD6 citations63
US7148110B2Dec 12, 2006

Local-length nitride SONOS device having self-aligned ONO structure and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD3 citations63
US7141473B2Nov 28, 2006

Self-aligned 1 bit local SONOS memory cell and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD5 citations63
US7602008B2Oct 13, 2009

Split gate non-volatile memory devices and methods of forming the same

SAMSUNG ELECTRONICS CO LTD6 citations62
US7598139B2Oct 6, 2009

Single chip data processing device with embedded nonvolatile memory and method thereof

SAMSUNG ELECTRONICS CO LTD3 citations62
US7432159B2Oct 7, 2008

Electrically erasable programmable read-only memory (EEPROM) device and methods of fabricating the same

SAMSUNG ELECTRONICS CO LTD2 citations62
US7320913B2Jan 22, 2008

Methods of forming split-gate non-volatile memory devices

SAMSUNG ELECTRONICS CO LTD2 citations62
US7352026B2Apr 1, 2008

EEPROM cell and EEPROM device with high integration and low source resistance and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD5 citations61
US7422949B2Sep 9, 2008

High voltage transistor and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD3 citations60
US7256448B2Aug 14, 2007

Split gate type nonvolatile semiconductor memory device, and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD3 citations60
US7221028B2May 22, 2007

High voltage transistor and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD5 citations60
US7029974B2Apr 18, 2006

Split gate type nonvolatile semiconductor memory device, and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD3 citations60
US7588983B2Sep 15, 2009

EEPROM cell and EEPROM device with high integration and low source resistance and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD2 citations59
US7586146B2Sep 8, 2009

Non-volatile memory and method of fabricating same

SAMSUNG ELECTRONICS CO LTD1 citations52
US7492000B2Feb 17, 2009

Self-aligned split-gate nonvolatile memory structure and a method of making the same

SAMSUNG ELECTRONICS CO LTD1 citations52
US7397079B2Jul 8, 2008

Non-volatile memory device and methods of forming the same

SAMSUNG ELECTRONICS CO LTD0 citations52
US7041557B2May 9, 2006

Method of manufacturing a thin dielectric layer using a heat treatment and a semiconductor device formed using the method

SAMSUNG ELECTRONICS CO LTD0 citations52
US7589376B2Sep 15, 2009

Electrically erasable programmable read-only memory (EEPROM) device and methods of fabricating the same

SAMSUNG ELECTRONICS CO LTD0 citations51
US7429766B2Sep 30, 2008

Split gate type nonvolatile memory device

SAMSUNG ELECTRONICS CO LTD0 citations42

HYUNDAI MOTOR CO LTD

4 patents

KANG SANG-WOO

1 patent

JEON HEE-SEOG

1 patent