Inventor
TSAI CHUN LIN
TW142 patents
⚠️ This page may combine multiple inventors who share the name “TSAI CHUN LIN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
30 patentsUS10050621B2Aug 14, 2018
Low static current semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD12 citations92
US9722065B1Aug 1, 2017
Semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD13 citations92
US11404557B2Aug 2, 2022
Method of forming a high electron mobility transistor
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations84
US10269949B2Apr 23, 2019
Semiconductor structure, HEMT structure and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations84
US10050117B2Aug 14, 2018
Method of forming a high electron mobility transistor
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US9812562B1Nov 7, 2017
Semiconductor structure, HEMT structure and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations84
US9793389B1Oct 17, 2017
Apparatus and method of fabrication for GaN/Si transistors isolation
TAIWAN SEMICONDUCTOR MFG CO LTD16 citations84
US9704968B2Jul 11, 2017
Method of forming a high electron mobility transistor
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations84
US9673323B2Jun 6, 2017
Embedded JFETs for high voltage applications
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US10535730B2Jan 14, 2020
High voltage metal-oxide-semiconductor (HVMOS) device integrated with a high voltage junction termination (HVJT) device
TAIWAN SEMICONDUCTOR MFG CO LTD8 citations83
US10284195B2May 7, 2019
Low static current semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD8 citations83
US9680009B2Jun 13, 2017
High voltage semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD8 citations83
US11854909B2Dec 26, 2023
Semiconductor structure and method for manufacturing thereof
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11824109B2Nov 21, 2023
Integration of p-channel and n-channel E-FET III-V devices with optimization of device performance
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11522077B2Dec 6, 2022
Integration of p-channel and n-channel E-FET III-V devices with optimization of device performance
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11521915B2Dec 6, 2022
Front-end-of-line (FEOL) through semiconductor-on-substrate via (TSV)
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11410991B2Aug 9, 2022
Series resistor over drain region in high voltage device
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10923467B2Feb 16, 2021
Series resistor over drain region in high voltage device
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10867990B2Dec 15, 2020
Series resistor over drain region in high voltage device
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10790375B2Sep 29, 2020
High electron mobility transistor
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10741665B2Aug 11, 2020
Method of forming a high electron mobility transistor
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10319644B2Jun 11, 2019
Method for manufacturing semiconductor structure
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10276657B2Apr 30, 2019
Isolation structure for active devices
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10083856B2Sep 25, 2018
Isolation regions for semiconductor structures and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US9627275B1Apr 18, 2017
Hybrid semiconductor structure on a common substrate
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US9508807B2Nov 29, 2016
Method of forming high electron mobility transistor
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US12278272B2Apr 15, 2025
Source leakage current suppression by source surrounding gate structure
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US11631741B2Apr 18, 2023
Semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations72
US11145713B2Oct 12, 2021
High voltage metal-oxide-semiconductor (HVMOS) device integrated with a high voltage junction termination (HVJT) device
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations72
US11139290B2Oct 5, 2021
High voltage cascode HEMT device
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations72
SU RU-YI
5 patentsUS8159029B2Apr 17, 2012
High voltage device having reduced on-state resistance
SU RU-YI21 citations92
US9373619B2Jun 21, 2016
High voltage resistor with high voltage junction termination
SU RU-YI11 citations84
US8629513B2Jan 14, 2014
HV interconnection solution using floating conductors
SU RU-YI10 citations84
US8624322B1Jan 7, 2014
High voltage device with a parallel resistor
SU RU-YI15 citations84
US8680616B2Mar 25, 2014
High side gate driver device
SU RU-YI5 citations73
TAIWAN SEMICONDUCTOR MFG
4 patentsUS9343542B2May 17, 2016
Method for fabricating enhancement mode transistor
TAIWAN SEMICONDUCTOR MFG5 citations84
US9190535B2Nov 17, 2015
Bootstrap MOS for high voltage applications
TAIWAN SEMICONDUCTOR MFG12 citations84
US8969913B2Mar 3, 2015
Insulated gate bipolar transistor structure having low substrate leakage
TAIWAN SEMICONDUCTOR MFG5 citations84
US7816744B2Oct 19, 2010
Gate electrodes of HVMOS devices having non-uniform doping concentrations
TAIWAN SEMICONDUCTOR MFG7 citations74
CHENG CHIH-CHANG
2 patentsCHEN PO-CHIH
2 patentsHUO KER HSIAO
2 patentsHSU CHUN-WEI
1 patentYao fu-wei
1 patentKALNITSKY ALEXANDER
1 patentTHEI KONG-BENG
1 patentYEH JEN-HAO
1 patentShowing the top 50 of 142 patents by PatentIndex Score.