P

Inventor

TSAI CHUN LIN

TW142 patents
⚠️ This page may combine multiple inventors who share the name “TSAI CHUN LIN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TAIWAN SEMICONDUCTOR MFG CO LTD

30 patents
US10050621B2Aug 14, 2018

Low static current semiconductor device

TAIWAN SEMICONDUCTOR MFG CO LTD12 citations92
US9722065B1Aug 1, 2017

Semiconductor device

TAIWAN SEMICONDUCTOR MFG CO LTD13 citations92
US11404557B2Aug 2, 2022

Method of forming a high electron mobility transistor

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations84
US10269949B2Apr 23, 2019

Semiconductor structure, HEMT structure and method of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations84
US10050117B2Aug 14, 2018

Method of forming a high electron mobility transistor

TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US9812562B1Nov 7, 2017

Semiconductor structure, HEMT structure and method of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations84
US9793389B1Oct 17, 2017

Apparatus and method of fabrication for GaN/Si transistors isolation

TAIWAN SEMICONDUCTOR MFG CO LTD16 citations84
US9704968B2Jul 11, 2017

Method of forming a high electron mobility transistor

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations84
US9673323B2Jun 6, 2017

Embedded JFETs for high voltage applications

TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US10535730B2Jan 14, 2020

High voltage metal-oxide-semiconductor (HVMOS) device integrated with a high voltage junction termination (HVJT) device

TAIWAN SEMICONDUCTOR MFG CO LTD8 citations83
US10284195B2May 7, 2019

Low static current semiconductor device

TAIWAN SEMICONDUCTOR MFG CO LTD8 citations83
US9680009B2Jun 13, 2017

High voltage semiconductor device

TAIWAN SEMICONDUCTOR MFG CO LTD8 citations83
US11854909B2Dec 26, 2023

Semiconductor structure and method for manufacturing thereof

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11824109B2Nov 21, 2023

Integration of p-channel and n-channel E-FET III-V devices with optimization of device performance

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11522077B2Dec 6, 2022

Integration of p-channel and n-channel E-FET III-V devices with optimization of device performance

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11521915B2Dec 6, 2022

Front-end-of-line (FEOL) through semiconductor-on-substrate via (TSV)

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11410991B2Aug 9, 2022

Series resistor over drain region in high voltage device

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10923467B2Feb 16, 2021

Series resistor over drain region in high voltage device

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10867990B2Dec 15, 2020

Series resistor over drain region in high voltage device

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10790375B2Sep 29, 2020

High electron mobility transistor

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10741665B2Aug 11, 2020

Method of forming a high electron mobility transistor

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10319644B2Jun 11, 2019

Method for manufacturing semiconductor structure

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10276657B2Apr 30, 2019

Isolation structure for active devices

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10083856B2Sep 25, 2018

Isolation regions for semiconductor structures and methods of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US9627275B1Apr 18, 2017

Hybrid semiconductor structure on a common substrate

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US9508807B2Nov 29, 2016

Method of forming high electron mobility transistor

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US12278272B2Apr 15, 2025

Source leakage current suppression by source surrounding gate structure

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US11631741B2Apr 18, 2023

Semiconductor device

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations72
US11145713B2Oct 12, 2021

High voltage metal-oxide-semiconductor (HVMOS) device integrated with a high voltage junction termination (HVJT) device

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations72
US11139290B2Oct 5, 2021

High voltage cascode HEMT device

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations72

SU RU-YI

5 patents

TAIWAN SEMICONDUCTOR MFG

4 patents

CHENG CHIH-CHANG

2 patents

CHEN PO-CHIH

2 patents

HUO KER HSIAO

2 patents

HSU CHUN-WEI

1 patent

Yao fu-wei

1 patent

KALNITSKY ALEXANDER

1 patent

THEI KONG-BENG

1 patent

YEH JEN-HAO

1 patent

Showing the top 50 of 142 patents by PatentIndex Score.