Inventor
CHANG CHUNG-FU
US46 patents
⚠️ This page may combine multiple inventors who share the name “CHANG CHUNG-FU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
UNITED MICROELECTRONICS CORP
32 patentsUS9166024B2Oct 20, 2015
FinFET structure with cavities and semiconductor compound portions extending laterally over sidewall spacers
UNITED MICROELECTRONICS CORP23 citations91
US9786510B2Oct 10, 2017
Fin-shaped structure and manufacturing method thereof
UNITED MICROELECTRONICS CORP5 citations84
US8993384B2Mar 31, 2015
Semiconductor device and fabrication method thereof
UNITED MICROELECTRONICS CORP7 citations84
US8981487B2Mar 17, 2015
Fin-shaped field-effect transistor (FinFET)
UNITED MICROELECTRONICS CORP7 citations84
US8895396B1Nov 25, 2014
Epitaxial Process of forming stress inducing epitaxial layers in source and drain regions of PMOS and NMOS structures
UNITED MICROELECTRONICS CORP14 citations84
US9385191B2Jul 5, 2016
FINFET structure
UNITED MICROELECTRONICS CORP10 citations83
US10050146B2Aug 14, 2018
Semiconductor device and method of forming the same
UNITED MICROELECTRONICS CORP2 citations73
US9666715B2May 30, 2017
FinFET transistor with epitaxial structures
UNITED MICROELECTRONICS CORP3 citations73
US9502530B2Nov 22, 2016
Method of manufacturing semiconductor devices
UNITED MICROELECTRONICS CORP4 citations73
US9224864B1Dec 29, 2015
Semiconductor device and method of fabricating the same
UNITED MICROELECTRONICS CORP4 citations73
US9899523B2Feb 20, 2018
Semiconductor structure
UNITED MICROELECTRONICS CORP5 citations72
US9691901B2Jun 27, 2017
Semiconductor device
UNITED MICROELECTRONICS CORP6 citations72
US9601600B2Mar 21, 2017
Processes for fabricating FinFET structures with semiconductor compound portions formed in cavities and extending over sidewall spacers
UNITED MICROELECTRONICS CORP3 citations72
US11631753B2Apr 18, 2023
Semiconductor device and method for fabricating the same
UNITED MICROELECTRONICS CORP3 citations71
US10930517B2Feb 23, 2021
Method of forming fin-shaped structure
UNITED MICROELECTRONICS CORP0 citations62
US8829575B2Sep 9, 2014
Semiconductor structure and process thereof
UNITED MICROELECTRONICS CORP2 citations62
US8753902B1Jun 17, 2014
Method of controlling etching process for forming epitaxial structure
UNITED MICROELECTRONICS CORP3 citations62
US12336209B2Jun 17, 2025
Semiconductor device and method for fabricating the same
UNITED MICROELECTRONICS CORP0 citations61
US12009409B2Jun 11, 2024
Semiconductor device and method for fabricating the same
UNITED MICROELECTRONICS CORP0 citations61
US10529856B2Jan 7, 2020
Method of forming semiconductor device
UNITED MICROELECTRONICS CORP0 citations52
US10418251B2Sep 17, 2019
Method of forming fin-shaped structure having ladder-shaped cross-sectional profile
UNITED MICROELECTRONICS CORP0 citations52
US9634125B2Apr 25, 2017
Fin field effect transistor device and fabrication method thereof
UNITED MICROELECTRONICS CORP1 citations52
US9397190B2Jul 19, 2016
Fabrication method of semiconductor structure
UNITED MICROELECTRONICS CORP0 citations52
US9318609B2Apr 19, 2016
Semiconductor device with epitaxial structure
UNITED MICROELECTRONICS CORP0 citations52
US9214395B2Dec 15, 2015
Method of manufacturing semiconductor devices
UNITED MICROELECTRONICS CORP1 citations52
US9159798B2Oct 13, 2015
Replacement gate process and device manufactured using the same
UNITED MICROELECTRONICS CORP1 citations52
US9070710B2Jun 30, 2015
Semiconductor process
UNITED MICROELECTRONICS CORP1 citations52
US9018066B2Apr 28, 2015
Method of fabricating semiconductor device structure
UNITED MICROELECTRONICS CORP1 citations52
US11145733B1Oct 12, 2021
Method of manufacturing a semiconductor device
UNITED MICROELECTRONICS CORP0 citations51
US10332750B2Jun 25, 2019
Method for fabricating semiconductor device with strained silicon structure
UNITED MICROELECTRONICS CORP0 citations51
US9373718B2Jun 21, 2016
Etching method for forming grooves in Si-substrate and fin field-effect transistor
UNITED MICROELECTRONICS CORP1 citations51
US9978854B2May 22, 2018
Fin field-effect transistor
UNITED MICROELECTRONICS CORP0 citations41
CHANG CHUNG FU
6 patentsUS10039952B2Aug 7, 2018
Treadmill having a curved treadmill deck
CHANG CHUNG FU8 citations84
US10668323B2Jun 2, 2020
Pedaling vibrational apparatus
CHANG CHUNG FU4 citations73
US10166424B2Jan 1, 2019
Exercise machine having changeable damping mechanism
CHANG CHUNG FU3 citations73
US10039951B2Aug 7, 2018
Horse riding exercise machine
CHANG CHUNG FU4 citations73
US10994457B2May 4, 2021
Method for manufacturing massage wear-resistant treadmill deck and finished product thereof
CHANG CHUNG FU0 citations62
US10799748B2Oct 13, 2020
Interacting exercise device
CHANG CHUNG FU0 citations41
CHANG CHUNG-FU
4 patentsUS9573017B2Feb 21, 2017
Buffer board structure of a treadmill
CHANG CHUNG-FU28 citations94
USD795364SAug 22, 2017
Stepper
CHANG CHUNG-FU11 citations84
US8772120B2Jul 8, 2014
Semiconductor process
CHANG CHUNG-FU5 citations72
US9724842B2Aug 8, 2017
Method of making a buffer board of a treadmill
CHANG CHUNG-FU0 citations41