Inventor
WATANABE SHIGEYOSHI
JP32 patents
⚠️ This page may combine multiple inventors who share the name “WATANABE SHIGEYOSHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TOSHIBA KK
28 patentsUS5416350AMay 16, 1995
Semiconductor device with vertical transistors connected in series between bit lines
TOSHIBA KK191 citations99
US5838038ANov 17, 1998
Dynamic random access memory device with the combined open/folded bit-line pair arrangement
TOSHIBA KK60 citations96
US5555519ASep 10, 1996
Dynamic random access memory device with the combined open/folded bit-line pair arrangement
TOSHIBA KK45 citations96
US5396450AMar 7, 1995
Dynamic random access memory device with the combined open/folded bit-line pair arrangement
TOSHIBA KK67 citations96
US4777625AOct 11, 1988
Divided-bit line type dynamic semiconductor memory with main and sub-sense amplifiers
TOSHIBA KK78 citations96
US5892724AApr 6, 1999
NAND-type dynamic RAM having temporary storage register and sense amplifier coupled to multi-open bit lines
TOSHIBA KK32 citations93
US5732010AMar 24, 1998
Dynamic random access memory device with the combined open/folded bit-line pair arrangement
TOSHIBA KK51 citations93
US5625602AApr 29, 1997
NAND-type dynamic RAM having temporary storage register and sense amplifier coupled to multi-open bit lines
TOSHIBA KK18 citations93
US5088060AFeb 11, 1992
Electrically erasable programmable read-only memory with NAND memory cell structure
TOSHIBA KK37 citations93
US4996669AFeb 26, 1991
Electrically erasable programmable read-only memory with NAND memory cell structure
TOSHIBA KK47 citations93
US4819207AApr 4, 1989
High-speed refreshing rechnique for highly-integrated random-access memory
TOSHIBA KK31 citations93
US4798977AJan 17, 1989
Word line driver for use in a semiconductor memory
TOSHIBA KK38 citations93
US6295241B1Sep 25, 2001
Dynamic random access memory device
TOSHIBA KK35 citations92
US5508957AApr 16, 1996
Non-volatile semiconductor memory with NAND cell structure and switching transistors with different channel lengths to reduce punch-through
TOSHIBA KK56 citations92
US5363325ANov 8, 1994
Dynamic semiconductor memory device having high integration density
TOSHIBA KK46 citations92
US4733374AMar 22, 1988
Dynamic semiconductor memory device
TOSHIBA KK30 citations92
USRE36993EDec 19, 2000
Dynamic random access memory device with the combined open/folded bit-line pair arrangement
TOSHIBA KK15 citations82
US6232822B1May 15, 2001
Semiconductor device including a bipolar transistor biased to produce a negative base current by the impact ionization mechanism
TOSHIBA KK13 citations74
US5717625AFeb 10, 1998
Semiconductor memory device
TOSHIBA KK15 citations74
US5194762AMar 16, 1993
Mos-type charging circuit
TOSHIBA KK16 citations74
US5060194AOct 22, 1991
Semiconductor memory device having a bicmos memory cell
TOSHIBA KK15 citations74
US5038191AAug 6, 1991
Semiconductor memory device
TOSHIBA KK9 citations74
US4811290AMar 7, 1989
Semiconductor memory device
TOSHIBA KK17 citations74
US4606011AAug 12, 1986
Single transistor/capacitor semiconductor memory device and method for manufacture
TOSHIBA KK7 citations74
US5397723AMar 14, 1995
Process for forming arrayed field effect transistors highly integrated on substrate
TOSHIBA KK13 citations72
US4831433AMay 16, 1989
Semiconductor device
TOSHIBA KK9 citations68
US5467303ANov 14, 1995
Semiconductor memory device having register groups for writing and reading data
TOSHIBA KK6 citations63
US6292390B1Sep 18, 2001
Semiconductor device
TOSHIBA KK0 citations52