P

Inventor

WATANABE SHIGEYOSHI

JP32 patents
⚠️ This page may combine multiple inventors who share the name “WATANABE SHIGEYOSHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TOSHIBA KK

28 patents
US5416350AMay 16, 1995

Semiconductor device with vertical transistors connected in series between bit lines

TOSHIBA KK191 citations99
US5838038ANov 17, 1998

Dynamic random access memory device with the combined open/folded bit-line pair arrangement

TOSHIBA KK60 citations96
US5555519ASep 10, 1996

Dynamic random access memory device with the combined open/folded bit-line pair arrangement

TOSHIBA KK45 citations96
US5396450AMar 7, 1995

Dynamic random access memory device with the combined open/folded bit-line pair arrangement

TOSHIBA KK67 citations96
US4777625AOct 11, 1988

Divided-bit line type dynamic semiconductor memory with main and sub-sense amplifiers

TOSHIBA KK78 citations96
US5892724AApr 6, 1999

NAND-type dynamic RAM having temporary storage register and sense amplifier coupled to multi-open bit lines

TOSHIBA KK32 citations93
US5732010AMar 24, 1998

Dynamic random access memory device with the combined open/folded bit-line pair arrangement

TOSHIBA KK51 citations93
US5625602AApr 29, 1997

NAND-type dynamic RAM having temporary storage register and sense amplifier coupled to multi-open bit lines

TOSHIBA KK18 citations93
US5088060AFeb 11, 1992

Electrically erasable programmable read-only memory with NAND memory cell structure

TOSHIBA KK37 citations93
US4996669AFeb 26, 1991

Electrically erasable programmable read-only memory with NAND memory cell structure

TOSHIBA KK47 citations93
US4819207AApr 4, 1989

High-speed refreshing rechnique for highly-integrated random-access memory

TOSHIBA KK31 citations93
US4798977AJan 17, 1989

Word line driver for use in a semiconductor memory

TOSHIBA KK38 citations93
US6295241B1Sep 25, 2001

Dynamic random access memory device

TOSHIBA KK35 citations92
US5508957AApr 16, 1996

Non-volatile semiconductor memory with NAND cell structure and switching transistors with different channel lengths to reduce punch-through

TOSHIBA KK56 citations92
US5363325ANov 8, 1994

Dynamic semiconductor memory device having high integration density

TOSHIBA KK46 citations92
US4733374AMar 22, 1988

Dynamic semiconductor memory device

TOSHIBA KK30 citations92
USRE36993EDec 19, 2000

Dynamic random access memory device with the combined open/folded bit-line pair arrangement

TOSHIBA KK15 citations82
US6232822B1May 15, 2001

Semiconductor device including a bipolar transistor biased to produce a negative base current by the impact ionization mechanism

TOSHIBA KK13 citations74
US5717625AFeb 10, 1998

Semiconductor memory device

TOSHIBA KK15 citations74
US5194762AMar 16, 1993

Mos-type charging circuit

TOSHIBA KK16 citations74
US5060194AOct 22, 1991

Semiconductor memory device having a bicmos memory cell

TOSHIBA KK15 citations74
US5038191AAug 6, 1991

Semiconductor memory device

TOSHIBA KK9 citations74
US4811290AMar 7, 1989

Semiconductor memory device

TOSHIBA KK17 citations74
US4606011AAug 12, 1986

Single transistor/capacitor semiconductor memory device and method for manufacture

TOSHIBA KK7 citations74
US5397723AMar 14, 1995

Process for forming arrayed field effect transistors highly integrated on substrate

TOSHIBA KK13 citations72
US4831433AMay 16, 1989

Semiconductor device

TOSHIBA KK9 citations68
US5467303ANov 14, 1995

Semiconductor memory device having register groups for writing and reading data

TOSHIBA KK6 citations63
US6292390B1Sep 18, 2001

Semiconductor device

TOSHIBA KK0 citations52

TOKYO SHIBAURA ELECTRIC CO

2 patents

KABUSHIKI KASIHA TOSHIBA

1 patent

WATANABE SHIGEYOSHI

1 patent