Inventor

COQUAND REMI

FR23 patents

⚠️ This page may combine multiple inventors who share the name “COQUAND REMI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

COQUAND REMI

COMMISSARIAT ENERGIE ATOMIQUE

Method for making superimposed transistors

Method of fabricating a FET transistor having a strained channel

Method for making a semiconductor device with nanowire and aligned external and internal spacers

Field effect transistor with reduced contact resistance

Method for making a semiconductor device with a compressive stressed channel

Method for producing a semiconductor device with self-aligned internal spacers

Method for making a semiconductor device with self-aligned inner spacers

Method of producing a channel structure formed from a plurality of strained semiconductor bars

Method for fabricating a transistor having a vertical channel having nano layers

Process for fabricating a field effect transistor having a coating gate

Semiconductor divice having a carbon containing insulation layer formed under the source/drain

Electronic device including at least one nano-object

Method for fabricating a field-effect transistor

Method for forming doped extension regions in a structure having superimposed nanowires

Transistor with superposed bars and double-gate structure

Method of fabrication of a semiconductor device including one or more nanostructures

Method of manufacturing at least one field effect transistor having epitaxially grown electrodes

Method for fabricating a field effect transistor having a surrounding grid

Process for fabricating a field effect transistor having a coating gate

Process for fabricating a vertical-channel nanolayer transistor

IBM

Optimizing junctions of gate all around structures with channel pull back

Creation of stress in the channel of a nanosheet transistor

Creation of stress in the channel of a nanosheet transistor