Inventor
TANG SANH D
US271 patents
⚠️ This page may combine multiple inventors who share the name “TANG SANH D”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MICRON TECHNOLOGY INC
35 patentsUS9741737B1Aug 22, 2017
Integrated structures comprising vertical channel material and having conductively-doped semiconductor material directly against lower sidewalls of the channel material
MICRON TECHNOLOGY INC105 citations99
US7384849B2Jun 10, 2008
Methods of forming recessed access devices associated with semiconductor constructions
MICRON TECHNOLOGY INC113 citations99
US7241655B2Jul 10, 2007
Method of fabricating a vertical wrap-around-gate field-effect-transistor for high density, low voltage logic and memory array
MICRON TECHNOLOGY INC101 citations99
US7071043B2Jul 4, 2006
Methods of forming a field effect transistor having source/drain material over insulative material
MICRON TECHNOLOGY INC114 citations99
US6936507B2Aug 30, 2005
Method of forming field effect transistors
MICRON TECHNOLOGY INC80 citations99
US10607995B2Mar 31, 2020
Memory arrays
MICRON TECHNOLOGY INC84 citations98
US9754953B2Sep 5, 2017
Charge storage apparatus and methods
MICRON TECHNOLOGY INC35 citations98
US8542513B2Sep 24, 2013
Arrays of vertically stacked tiers of non-volatile cross point memory cells, methods of forming arrays of vertically stacked tiers of non-volatile cross point memory cells, and methods of reading a data value stored by an array of vertically stacked tiers of non-volatile cross point memory cells
MICRON TECHNOLOGY INC46 citations98
US7244659B2Jul 17, 2007
Integrated circuits and methods of forming a field effect transistor
MICRON TECHNOLOGY INC81 citations98
US7122425B2Oct 17, 2006
Methods of forming semiconductor constructions
MICRON TECHNOLOGY INC110 citations98
US7589995B2Sep 15, 2009
One-transistor memory cell with bias gate
MICRON TECHNOLOGY INC64 citations97
US7547945B2Jun 16, 2009
Transistor devices, transistor structures and semiconductor constructions
MICRON TECHNOLOGY INC33 citations96
US7465616B2Dec 16, 2008
Method of forming a field effect transistor
MICRON TECHNOLOGY INC26 citations96
US7374990B2May 20, 2008
Vertical wrap-around-gate field-effect-transistor for high density, low voltage logic and memory array
MICRON TECHNOLOGY INC38 citations96
US9773888B2Sep 26, 2017
Vertical access devices, semiconductor device structures, and related methods
MICRON TECHNOLOGY INC30 citations94
US9754946B1Sep 5, 2017
Methods of forming an elevationally extending conductor laterally between a pair of conductive lines
MICRON TECHNOLOGY INC30 citations94
US10418379B2Sep 17, 2019
Integrated structures comprising channel material extending into source material
MICRON TECHNOLOGY INC12 citations93
US10090324B2Oct 2, 2018
Three dimensional memory and methods of forming the same
MICRON TECHNOLOGY INC12 citations93
US9941298B2Apr 10, 2018
Methods of forming integrated structures comprising vertical channel material and having conductively-doped semiconductor material directly against lower sidewalls of the channel material
MICRON TECHNOLOGY INC14 citations93
US9780115B2Oct 3, 2017
Three dimensional memory and methods of forming the same
MICRON TECHNOLOGY INC10 citations93
US9379005B2Jun 28, 2016
Three dimensional memory and methods of forming the same
MICRON TECHNOLOGY INC12 citations93
US9281402B2Mar 8, 2016
Methods of fabricating fin structures
MICRON TECHNOLOGY INC12 citations93
US8802520B2Aug 12, 2014
Method of forming a field effect transistor having source/drain material over insulative material
MICRON TECHNOLOGY INC12 citations93
US8743589B2Jun 3, 2014
Arrays of vertically stacked tiers of non-volatile cross point memory cells and methods of reading a data value stored by an array of vertically stacked tiers of non-volatile cross point memory cells
MICRON TECHNOLOGY INC24 citations93
US7929343B2Apr 19, 2011
Methods, devices, and systems relating to memory cells having a floating body
MICRON TECHNOLOGY INC17 citations93
US7745319B2Jun 29, 2010
System and method for fabricating a fin field effect transistor
MICRON TECHNOLOGY INC24 citations93
US7659560B2Feb 9, 2010
Transistor structures
MICRON TECHNOLOGY INC15 citations93
US7470576B2Dec 30, 2008
Methods of forming field effect transistor gate lines
MICRON TECHNOLOGY INC13 citations93
US7118950B2Oct 10, 2006
Method of forming a field effect transistor
MICRON TECHNOLOGY INC12 citations93
US6740573B2May 25, 2004
Method for forming an integrated circuit interconnect using a dual poly process
MICRON TECHNOLOGY INC13 citations93
US6727150B2Apr 27, 2004
Methods of forming trench isolation within a semiconductor substrate including, Tshaped trench with spacers
MICRON TECHNOLOGY INC34 citations93
US6596632B2Jul 22, 2003
Method for forming an integrated circuit interconnect using a dual poly process
MICRON TECHNOLOGY INC15 citations93
US6479377B1Nov 12, 2002
Method for making semiconductor devices having contact plugs and local interconnects
MICRON TECHNOLOGY INC17 citations93
US6200892B1Mar 13, 2001
Method for forming an integrated circuit interconnect using a dual poly process
MICRON TECHNOLOGY INC20 citations93
US6117793ASep 12, 2000
Using silicide cap as an etch stop for multilayer metal process and structures so formed
MICRON TECHNOLOGY INC32 citations93
TANG SANH D
11 patentsUS8411477B2Apr 2, 2013
Arrays of vertically stacked tiers of non-volatile cross point memory cells, methods of forming arrays of vertically stacked tiers of non-volatile cross point memory cells, and methods of reading a data value stored by an array of vertically stacked tiers of non-volatile cross point memory cells
TANG SANH D61 citations98
US8158967B2Apr 17, 2012
Integrated memory arrays
TANG SANH D76 citations98
US9252188B2Feb 2, 2016
Methods of forming memory cells
TANG SANH D14 citations93
US8803214B2Aug 12, 2014
Three dimensional memory and methods of forming the same
TANG SANH D20 citations93
US8759895B2Jun 24, 2014
Semiconductor charge storage apparatus and methods
TANG SANH D18 citations93
US8598621B2Dec 3, 2013
Memory cells, memory arrays, methods of forming memory cells, and methods of forming a shared doped semiconductor region of a vertically oriented thyristor and a vertically oriented access transistor
TANG SANH D19 citations93
US8507966B2Aug 13, 2013
Semiconductor cells, arrays, devices and systems having a buried conductive line and methods for forming the same
TANG SANH D10 citations93
US8501559B2Aug 6, 2013
Semiconductor cells, arrays, devices and systems having a buried conductive line and methods for forming the same
TANG SANH D21 citations93
US8461566B2Jun 11, 2013
Methods, structures and devices for increasing memory density
TANG SANH D16 citations93
US8288795B2Oct 16, 2012
Thyristor based memory cells, devices and systems including the same and methods for forming the same
TANG SANH D13 citations93
US8501581B2Aug 6, 2013
Methods of forming semiconductor constructions
TANG SANH D17 citations92
PAREKH KUNAL R
1 patentFISCHER MARK
1 patentSANDHU GURTEJ S
1 patentRAMASWAMY D V NIRMAL
1 patentShowing the top 50 of 271 patents by PatentIndex Score.