Inventor · disambiguated record
Arkadii V. Samoilov
Also filed as: SAMOILOV ARKADII · SAMOILOV ARKADII V
73 granted patents·15 pending applications·1,518 citations·filing 1999–2020
99Inventor score
Files withMAXIM INTEGRATED PRODUCTS29APPLIED MATERIALS INC24SAMOILOV ARKADII V6KERNESS NICOLE D4ALVARADO REY2
Top patents by PatentIndex Score
88 records- 0197US9851250B1Fully integrated gas concentration sensorMAXIM INTEGRATED PRODUCTS·Filed 2016·Granted Dec 26, 2017·19 cites·20 claims
- 0297US7235492B2Low temperature etchant for treatment of silicon-containing surfacesAPPLIED MATERIALS INC·Filed 2005·Granted Jun 26, 2007·51 cites·40 claims
- 0397US7132338B2Methods to fabricate MOSFET devices using selective deposition processAPPLIED MATERIALS INC·Filed 2004·Granted Nov 7, 2006·149 cites·21 claims
- 0497US6494959B1Process and apparatus for cleaning a silicon surfaceAPPLIED MATERIALS INC·Filed 2000·Granted Dec 17, 2002·260 cites·41 claims
- 0596US7166528B2Methods of selective deposition of heavily doped epitaxial SiGeAPPLIED MATERIALS INC·Filed 2003·Granted Jan 23, 2007·90 cites·45 claims
- 0695US10475937B1Optical sensor packages employing cloaking layersMAXIM INTEGRATED PRODUCTS·Filed 2018·Granted Nov 12, 2019·27 cites·17 claims
- 0795US8779540B2Light sensor having transparent substrate with lens formed thereinKERNESS NICOLE D·Filed 2011·Granted Jul 15, 2014·20 cites·7 claims
- 0895US7682940B2Use of Cl2 and/or HCl during silicon epitaxial film formationAPPLIED MATERIALS INC·Filed 2005·Granted Mar 23, 2010·32 cites·37 claims
- 0995US6911401B2Method for CVD process control for enhancing device performanceAPPLIED MATERIALS INC·Filed 2003·Granted Jun 28, 2005·240 cites·84 claims
- 1094US9322901B2Multichip wafer level package (WLP) optical deviceMAXIM INTEGRATED PRODUCTS·Filed 2013·Granted Apr 26, 2016·19 cites·26 claims
- 1194US7521365B2Selective epitaxy process with alternating gas supplyAPPLIED MATERIALS INC·Filed 2006·Granted Apr 21, 2009·19 cites·10 claims
- 1293US8803068B2Light sensor having a contiguous IR suppression filter and a transparent substrateKERNESS NICOLE D·Filed 2011·Granted Aug 12, 2014·9 cites·22 claims
- 1393US8643150B1Wafer-level package device having solder bump assemblies that include an inner pillar structureXU YONG L·Filed 2012·Granted Feb 4, 2014·27 cites·10 claims
- 1493US8575493B1Integrated circuit device having extended under ball metallizationXU YONG LI·Filed 2011·Granted Nov 5, 2013·41 cites·8 claims
- 1593US8264089B2Enhanced WLP for superior temp cycling, drop test and high current applicationsALVARADO REY·Filed 2010·Granted Sep 11, 2012·35 cites·13 claims
- 1693US7572715B2Selective epitaxy process with alternating gas supplyAPPLIED MATERIALS INC·Filed 2007·Granted Aug 11, 2009·16 cites·26 claims
- 1793US7312128B2Selective epitaxy process with alternating gas supplyAPPLIED MATERIALS INC·Filed 2004·Granted Dec 25, 2007·47 cites·45 claims
- 1892US8749007B1Light sensor having transparent substrate and diffuser formed thereinKERNESS NICOLE D·Filed 2011·Granted Jun 10, 2014·10 cites·5 claims
- 1991US9087732B1Wafer-level package device having solder bump assemblies that include an inner pillar structureMAXIM INTEGRATED PRODUCTS·Filed 2014·Granted Jul 21, 2015·11 cites·9 claims
- 2091US8686560B2Wafer-level chip-scale package device having bump assemblies configured to mitigate failures due to stressPARVARANDEH PIROOZ·Filed 2010·Granted Apr 1, 2014·15 cites·9 claims
- 2191US7651948B2Pre-cleaning of substrates in epitaxy chambersAPPLIED MATERIALS INC·Filed 2006·Granted Jan 26, 2010·18 cites·20 claims
- 2290US10168211B1Fully integrated gas concentration sensorMAXIM INTEGRATED PRODUCTS·Filed 2017·Granted Jan 1, 2019·4 cites·20 claims
- 2390US8791404B2Light sensor having a transparent substrate, a contiguous IR suppression filter and through-substrate viasKERNESS NICOLE D·Filed 2011·Granted Jul 29, 2014·8 cites·22 claims
- 2490US8084871B2Redistribution layer enhancement to improve reliability of wafer level packagingRAHIM S KAYSAR·Filed 2009·Granted Dec 27, 2011·44 cites·18 claims
- 2590US7737007B2Methods to fabricate MOSFET devices using a selective deposition processAPPLIED MATERIALS INC·Filed 2008·Granted Jun 15, 2010·12 cites·16 claims
- 2690US7517775B2Methods of selective deposition of heavily doped epitaxial SiGeAPPLIED MATERIALS INC·Filed 2006·Granted Apr 14, 2009·11 cites·15 claims
- 2790US6455814B1Backside heating chamber for emissivity independent thermal processesAPPLIED MATERIALS INC·Filed 2001·Granted Sep 24, 2002·51 cites·17 claims
- 2889US8445389B2Etchant treatment processes for substrate surfaces and chamber surfacesZOJAJI ALI·Filed 2012·Granted May 21, 2013·8 cites·20 claims
- 2989US7960256B2Use of CL2 and/or HCL during silicon epitaxial film formationAPPLIED MATERIALS INC·Filed 2010·Granted Jun 14, 2011·8 cites·14 claims
- 3088US7732305B2Use of Cl2 and/or HCl during silicon epitaxial film formationAPPLIED MATERIALS INC·Filed 2006·Granted Jun 8, 2010·10 cites·21 claims
- 3188US6770134B2Method for fabricating waveguidesAPPLIED MATERIALS INC·Filed 2001·Granted Aug 3, 2004·32 cites·29 claims
- 3287US9196587B2Semiconductor device having a die and through substrate-viaMAXIM INTEGRATED PRODUCTS·Filed 2013·Granted Nov 24, 2015·8 cites·12 claims
- 3387US8093154B2Etchant treatment processes for substrate surfaces and chamber surfacesZOJAJI ALI·Filed 2005·Granted Jan 10, 2012·10 cites·25 claims
- 3487US7598178B2Carbon precursors for use during silicon epitaxial film formationAPPLIED MATERIALS INC·Filed 2007·Granted Oct 6, 2009·16 cites·22 claims
- 3587US7439142B2Methods to fabricate MOSFET devices using a selective deposition processAPPLIED MATERIALS INC·Filed 2006·Granted Oct 21, 2008·10 cites·34 claims
- 3683US9704809B2Fan-out and heterogeneous packaging of electronic componentsMAXIM INTEGRATED PRODUCTS·Filed 2013·Granted Jul 11, 2017·7 cites·12 claims
- 3783US9472696B1Light sensor having a contiguous IR suppression filter and transparent substrateMAXIM INTEGRATED PRODUCTS·Filed 2014·Granted Oct 18, 2016·2 cites·21 claims
- 3883US9354111B2Wafer level lens in packageMAXIM INTEGRATED PRODUCTS·Filed 2014·Granted May 31, 2016·5 cites·19 claims
- 3983US8278748B2Wafer-level packaged device having self-assembled resilient leadsLO CHIUNG C·Filed 2010·Granted Oct 2, 2012·6 cites·41 claims
- 4082US9159684B1Wafer-level packaged device having self-assembled resilient leadsMAXIM INTEGRATED PRODUCTS·Filed 2014·Granted Oct 13, 2015·4 cites·20 claims
- 4181US9224884B2Light sensor having transparent substrate and diffuser formed thereinMAXIM INTEGRATED PRODUCTS·Filed 2014·Granted Dec 29, 2015·3 cites·16 claims
- 4281US9224890B1Light sensor having transparent substrate with lens formed thereinMAXIM INTEGRATED PRODUCTS·Filed 2014·Granted Dec 29, 2015·3 cites·16 claims
- 4381US8742574B2Semiconductor device having a through-substrate viaSAMOILOV ARKADII V·Filed 2011·Granted Jun 3, 2014·6 cites·10 claims
- 4480US9583425B2Solder fatigue arrest for wafer level packageMAXIM INTEGRATED PRODUCTS·Filed 2013·Granted Feb 28, 2017·6 cites·8 claims
- 4580US9558390B2High-resolution electric field sensor in cover glassQUALCOMM INC·Filed 2014·Granted Jan 31, 2017·3 cites·20 claims
- 4680US8692367B1Wafer-level packaged device having self-assembled resilient leadsMAXIM INTEGRATED PRODUCTS·Filed 2012·Granted Apr 8, 2014·4 cites·7 claims
- 4779US10132679B2Ultraviolet sensor having filterMAXIM INTEGRATED PRODUCTS·Filed 2014·Granted Nov 20, 2018·3 cites·18 claims
- 4879US9105750B1Semiconductor device having a through-substrate viaMAXIM INTEGRATED PRODUCTS·Filed 2014·Granted Aug 11, 2015·4 cites·13 claims
- 4979US8259464B2Wafer level package (WLP) device having bump assemblies including a barrier metalZHOU TIAO·Filed 2010·Granted Sep 4, 2012·7 cites·20 claims
- 5077US8405115B2Light sensor using wafer-level packagingSAMOILOV ARKADII V·Filed 2009·Granted Mar 26, 2013·8 cites·21 claims
Showing the top 50 of 88 patent records by PatentIndex Score.
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