Inventor
OHKI TOSHIHIRO
JP42 patents
⚠️ This page may combine multiple inventors who share the name “OHKI TOSHIHIRO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
FUJITSU LTD
22 patentsUS7955984B2Jun 7, 2011
High speed high power nitride semiconductor device
FUJITSU LTD41 citations92
US9553152B2Jan 24, 2017
Semiconductor device
FUJITSU LTD8 citations84
US8866157B2Oct 21, 2014
Semiconductor device and method of fabricating the semiconductor device
FUJITSU LTD9 citations84
US8003452B2Aug 23, 2011
Compound semiconductor device and manufacturing method thereof
FUJITSU LTD7 citations84
US9608083B2Mar 28, 2017
Semiconductor device
FUJITSU LTD2 citations73
US8030686B2Oct 4, 2011
Semiconductor device and method for manufacturing the same
FUJITSU LTD3 citations63
US7948062B2May 24, 2011
Semiconductor device and method for manufacturing semiconductor device
FUJITSU LTD6 citations63
US7220628B2May 22, 2007
Semiconductor device and manufacturing method thereof, and gate electrode and manufacturing method thereof
FUJITSU LTD5 citations63
US12369345B2Jul 22, 2025
Compound semiconductor device, amplifier, and method for manufacturing compound semiconductor device
FUJITSU LTD0 citations62
US11088044B2Aug 10, 2021
Compound semiconductor device and fabrication method therefor, and amplifier
FUJITSU LTD0 citations62
US12193151B2Jan 7, 2025
High-frequency circuit board and antenna module
FUJITSU LTD0 citations60
US10964805B2Mar 30, 2021
Compound semiconductor device
FUJITSU LTD0 citations60
US11688663B2Jun 27, 2023
Semiconductor device, semiconductor device fabrication method, and electronic device
FUJITSU LTD0 citations59
US11387357B2Jul 12, 2022
Compound semiconductor device, method for manufacturing the same and amplifier
FUJITSU LTD0 citations52
US11038045B2Jun 15, 2021
Semiconductor device
FUJITSU LTD0 citations52
US10483185B2Nov 19, 2019
Semiconductor device and method for manufacturing same
FUJITSU LTD0 citations52
US9685547B2Jun 20, 2017
Semiconductor apparatus including barrier film provided between electrode and protection film
FUJITSU LTD0 citations52
US9647084B2May 9, 2017
Semiconductor device and method of manufacturing the same
FUJITSU LTD0 citations52
US9257514B2Feb 9, 2016
Semiconductor device with plural electrodes formed on substrate
FUJITSU LTD0 citations52
US9123793B2Sep 1, 2015
Method for manufacturing semiconductor apparatus having fluorine containing region formed in recessed portion of semiconductor layer
FUJITSU LTD0 citations52
US9035357B2May 19, 2015
Compound semiconductor device and manufacturing method therefor
FUJITSU LTD0 citations52
US9564527B2Feb 7, 2017
Semiconductor device and manufacturing method of semiconductor device
FUJITSU LTD0 citations41
OHKI TOSHIHIRO
10 patentsUS9379229B2Jun 28, 2016
Semiconductor apparatus including protective film on gate electrode and method for manufacturing the semiconductor apparatus
OHKI TOSHIHIRO5 citations83
US9093512B2Jul 28, 2015
Compound semiconductor device
OHKI TOSHIHIRO15 citations83
US8278688B2Oct 2, 2012
Compound semiconductor device and manufacturing method thereof
OHKI TOSHIHIRO6 citations73
US9035353B2May 19, 2015
Compound semiconductor device comprising electrode above compound semiconductor layer and method of manufacturing the same
OHKI TOSHIHIRO5 citations72
US8969919B2Mar 3, 2015
Field-effect transistor
OHKI TOSHIHIRO2 citations62
US8389351B2Mar 5, 2013
Method for fabricating semiconductor device
OHKI TOSHIHIRO2 citations62
US8829569B2Sep 9, 2014
Semiconductor apparatus having fluorine containing region formed in recessed portion of semiconductor layer
OHKI TOSHIHIRO0 citations52
US8809136B2Aug 19, 2014
Semiconductor device and method for manufacturing the same
OHKI TOSHIHIRO1 citations51
US8598571B2Dec 3, 2013
Method of manufacturing a compound semiconductor device with compound semiconductor lamination structure
OHKI TOSHIHIRO0 citations51
US8519441B2Aug 27, 2013
High speed high power nitride semiconductor device
OHKI TOSHIHIRO0 citations51