Inventor

PARK NAM KYUN

KR57 patents

⚠️ This page may combine multiple inventors who share the name “PARK NAM KYUN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

PARK NAM KYUN

SK HYNIX INC

Three-dimensional semiconductor device, variable resistive memory device including the same, and method of manufacturing the same

Semiconductor integrated circuit device, method of manufacturing the same, and method of driving the same

Vertical transistor and variable resistive memory device including the same

Variable resistance memory device and method of driving the same

Variable resistance memory device and method of manufacturing the same

Method of manufacturing three-dimensional semiconductor device and variable resistive memory device

3D variable resistance memory device having junction FET and driving method thereof

3-dimensional stack memory device

3D variable resistance memory device having junction FET and driving method thereof

Transistor, resistance variable memory device including the same, and manufacturing method thereof

3D variable resistance memory device and method of manufacturing the same

Variable resistance memory device

Variable resistance memory device with shunt gate connected to corresponding gate

Semiconductor device having fin gate, resistive memory device including the same, and method of manufacturing the same

Vertical memory device and method of fabricating the same

Variable resistive memory device and method of fabricating the same and method of driving the same

Variable resistive memory device and method of fabricating and driving the same

Semiconductor intergrated circuit device, method of manufacturing the same, and method of driving the same

Transistor having a vertical channel

Transistor having a vertical channel

Variable resistive memory device including vertical channel PMOS transistor

3D variable resistance memory device having junction FET and driving method thereof

3D variable resistance memory device and method of manufacturing the same

3D variable resistance memory device and method of manufacturing the same

Variable resistive memory device including vertical channel PMOS transistor and method of manufacturing the same

Vertical type semiconductor device and fabrication method thereof

Variable resistive memory device including vertical channel PMOS transistor and method of manufacturing the same

Semiconductor device having vertical channel, resistive memory device including the same, and method of manufacturing the same

Variable resistance memory device with shunt gate connected to corresponding gate

Memory device having conductive lines crossing each other

Electronic device including semiconductor memory having different distances between switching elements and variable resistance elements

Variable resistance memory device

Electronic device including semiconductor memory having different distances between switching elements and variable resistance elements

Stack type semiconductor memory device

Stack type semiconductor memory device

3-dimensional stack memory device

Semiconductor device having vertical channel, resistive memory device including the same, and method of manufacturing the same

Method of manufacturing semiconductor device having fin gate

3D variable resistance memory device and method of manufacturing the same

Semiconductor device having fin gate, resistive memory device including the same, and method of manufacturing the same

Semiconductor device having vertical channel, resistive memory device including the same, and method of manufacturing the same

Phase-change random access memory device and method of manufacturing the same

PARK NAM KYUN

Phase change memory device capable of reducing disturbance and method of manufacturing the same

Stack type semiconductor memory device

Stack memory apparatus

Phase change memory device having multiple metal silicide layers and method of manufacturing the same

Phase change memory device and method of manufacturing the same

Resistive memory device and method of manufacturing the same

KIM MYOUNG SUB

Semiconductor intergrated circuit device, method of manufacturing the same, and method of driving the same

HYNIX SEMICONDUCTOR INC

Phase change memory device having a diode that has an enlarged PN interfacial junction and method for manufacturing the same