P

Inventor

TING YU-WEI

TW59 patents
⚠️ This page may combine multiple inventors who share the name “TING YU-WEI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TAIWAN SEMICONDUCTOR MFG CO LTD

26 patents
US10700070B2Jun 30, 2020

Embedded transistor

TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US10103151B2Oct 16, 2018

Embedded transistor

TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US9634134B2Apr 25, 2017

Embedded transistor

TAIWAN SEMICONDUCTOR MFG CO LTD11 citations84
US9230647B2Jan 5, 2016

Metal line connection for improved RRAM reliability, semiconductor arrangement comprising the same, and manufacture thereof

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations84
US10748907B2Aug 18, 2020

Embedded transistor

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10262731B2Apr 16, 2019

Device and method for forming resistive random access memory cell

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US9991368B2Jun 5, 2018

Vertical BJT for high density memory

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US9893122B2Feb 13, 2018

Metal line connection for improved RRAM reliability, semiconductor arrangement comprising the same, and manufacture thereof

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US9613965B2Apr 4, 2017

Embedded transistor

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US9178040B2Nov 3, 2015

Innovative approach of 4F2 driver formation for high-density RRAM and MRAM

TAIWAN SEMICONDUCTOR MFG CO LTD5 citations73
US9472596B2Oct 18, 2016

Metal line connection for improved RRAM reliability, semiconductor arrangement comprising the same, and manufacture thereof

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations63
US9153672B2Oct 6, 2015

Vertical BJT for high density memory

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations63
US12581871B2Mar 17, 2026

Phase-change material (PCM) radio frequency (RF) switching device with thin self-aligned dielectric layer

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12543513B2Feb 3, 2026

High-frequency, low-voltage switch devices and methods of manufacturing thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12217924B2Feb 4, 2025

Heat controlled switch

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12426272B2Sep 23, 2025

Ferroelectric tunnel junction memory devices with enhanced read window

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US12200943B2Jan 14, 2025

Memory device structure and manufacturing method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US12225735B2Feb 11, 2025

Selector for memory device

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations59
US12527006B2Jan 13, 2026

Vertical 1T1R structure for embedded memory

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US12490503B2Dec 2, 2025

Voltage regulator having variable output capacitance and methods for forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US11315931B2Apr 26, 2022

Embedded transistor

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10062735B2Aug 28, 2018

Innovative approach of 4F2 driver formation for high-density RRAM and MRAM

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations52
US9576656B2Feb 21, 2017

Device and method for setting resistive random access memory cell

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9543404B2Jan 10, 2017

Vertical BJT for high density memory

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9530462B2Dec 27, 2016

Memory cell with decoupled read/write path

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9520446B2Dec 13, 2016

Innovative approach of 4F2 driver formation for high-density RRAM and MRAM

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52

NANYA TECHNOLOGY CORP

13 patents
US7026647B2Apr 11, 2006

Device and method for detecting alignment of active areas and memory cell structures in DRAM devices

NANYA TECHNOLOGY CORP11 citations84
US6902942B2Jun 7, 2005

Device and method for detecting alignment of deep trench capacitors and word lines in DRAM devices

NANYA TECHNOLOGY CORP12 citations84
US6693834B1Feb 17, 2004

Device and method for detecting alignment of bit lines and bit line contacts in DRAM devices

NANYA TECHNOLOGY CORP13 citations84
US6891216B1May 10, 2005

Test structure of DRAM

NANYA TECHNOLOGY CORP11 citations73
US7381575B2Jun 3, 2008

Device and method for detecting alignment of active areas and memory cell structures in DRAM devices

NANYA TECHNOLOGY CORP2 citations62
US7217581B2May 15, 2007

Misalignment test structure and method thereof

NANYA TECHNOLOGY CORP4 citations62
US6984534B2Jan 10, 2006

Method and device for detecting whether the alignment of bit line contacts and active areas in DRAM devices is normal

NANYA TECHNOLOGY CORP2 citations62
US6946678B2Sep 20, 2005

Test key for validating the position of a word line overlaying a trench capacitor in DRAMs

NANYA TECHNOLOGY CORP4 citations62
US6875654B2Apr 5, 2005

Memory device and fabrication method thereof

NANYA TECHNOLOGY CORP4 citations62
US6838296B2Jan 4, 2005

Device and method for detecting alignment of deep trench capacitors and active areas in DRAM devices

NANYA TECHNOLOGY CORP3 citations62
US6812487B1Nov 2, 2004

Test key and method for validating the doping concentration of buried layers within a deep trench capacitors

NANYA TECHNOLOGY CORP4 citations60
US7091545B2Aug 15, 2006

Memory device and fabrication method thereof

NANYA TECHNOLOGY CORP0 citations52
US6844207B2Jan 18, 2005

Method and device for detecting whether the alignment of bit line contacts and active areas in DRAM devices is normal

NANYA TECHNOLOGY CORP1 citations52

TAIWAN SEMICONDUCTOR MFG

8 patents

TAIWAN SEMICONDCUTOR MFG COMPANY LTD

1 patent

TING YU-WEI

1 patent

NANYA TECHONOLGY CORP

1 patent

Showing the top 50 of 59 patents by PatentIndex Score.