Inventor
TING YU-WEI
TW59 patents
⚠️ This page may combine multiple inventors who share the name “TING YU-WEI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
26 patentsUS10700070B2Jun 30, 2020
Embedded transistor
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US10103151B2Oct 16, 2018
Embedded transistor
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US9634134B2Apr 25, 2017
Embedded transistor
TAIWAN SEMICONDUCTOR MFG CO LTD11 citations84
US9230647B2Jan 5, 2016
Metal line connection for improved RRAM reliability, semiconductor arrangement comprising the same, and manufacture thereof
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations84
US10748907B2Aug 18, 2020
Embedded transistor
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10262731B2Apr 16, 2019
Device and method for forming resistive random access memory cell
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US9991368B2Jun 5, 2018
Vertical BJT for high density memory
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US9893122B2Feb 13, 2018
Metal line connection for improved RRAM reliability, semiconductor arrangement comprising the same, and manufacture thereof
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US9613965B2Apr 4, 2017
Embedded transistor
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US9178040B2Nov 3, 2015
Innovative approach of 4F2 driver formation for high-density RRAM and MRAM
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations73
US9472596B2Oct 18, 2016
Metal line connection for improved RRAM reliability, semiconductor arrangement comprising the same, and manufacture thereof
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations63
US9153672B2Oct 6, 2015
Vertical BJT for high density memory
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations63
US12581871B2Mar 17, 2026
Phase-change material (PCM) radio frequency (RF) switching device with thin self-aligned dielectric layer
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12543513B2Feb 3, 2026
High-frequency, low-voltage switch devices and methods of manufacturing thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12217924B2Feb 4, 2025
Heat controlled switch
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12426272B2Sep 23, 2025
Ferroelectric tunnel junction memory devices with enhanced read window
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US12200943B2Jan 14, 2025
Memory device structure and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US12225735B2Feb 11, 2025
Selector for memory device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations59
US12527006B2Jan 13, 2026
Vertical 1T1R structure for embedded memory
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US12490503B2Dec 2, 2025
Voltage regulator having variable output capacitance and methods for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US11315931B2Apr 26, 2022
Embedded transistor
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10062735B2Aug 28, 2018
Innovative approach of 4F2 driver formation for high-density RRAM and MRAM
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations52
US9576656B2Feb 21, 2017
Device and method for setting resistive random access memory cell
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9543404B2Jan 10, 2017
Vertical BJT for high density memory
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9530462B2Dec 27, 2016
Memory cell with decoupled read/write path
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9520446B2Dec 13, 2016
Innovative approach of 4F2 driver formation for high-density RRAM and MRAM
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
NANYA TECHNOLOGY CORP
13 patentsUS7026647B2Apr 11, 2006
Device and method for detecting alignment of active areas and memory cell structures in DRAM devices
NANYA TECHNOLOGY CORP11 citations84
US6902942B2Jun 7, 2005
Device and method for detecting alignment of deep trench capacitors and word lines in DRAM devices
NANYA TECHNOLOGY CORP12 citations84
US6693834B1Feb 17, 2004
Device and method for detecting alignment of bit lines and bit line contacts in DRAM devices
NANYA TECHNOLOGY CORP13 citations84
US6891216B1May 10, 2005
Test structure of DRAM
NANYA TECHNOLOGY CORP11 citations73
US7381575B2Jun 3, 2008
Device and method for detecting alignment of active areas and memory cell structures in DRAM devices
NANYA TECHNOLOGY CORP2 citations62
US7217581B2May 15, 2007
Misalignment test structure and method thereof
NANYA TECHNOLOGY CORP4 citations62
US6984534B2Jan 10, 2006
Method and device for detecting whether the alignment of bit line contacts and active areas in DRAM devices is normal
NANYA TECHNOLOGY CORP2 citations62
US6946678B2Sep 20, 2005
Test key for validating the position of a word line overlaying a trench capacitor in DRAMs
NANYA TECHNOLOGY CORP4 citations62
US6875654B2Apr 5, 2005
Memory device and fabrication method thereof
NANYA TECHNOLOGY CORP4 citations62
US6838296B2Jan 4, 2005
Device and method for detecting alignment of deep trench capacitors and active areas in DRAM devices
NANYA TECHNOLOGY CORP3 citations62
US6812487B1Nov 2, 2004
Test key and method for validating the doping concentration of buried layers within a deep trench capacitors
NANYA TECHNOLOGY CORP4 citations60
US7091545B2Aug 15, 2006
Memory device and fabrication method thereof
NANYA TECHNOLOGY CORP0 citations52
US6844207B2Jan 18, 2005
Method and device for detecting whether the alignment of bit line contacts and active areas in DRAM devices is normal
NANYA TECHNOLOGY CORP1 citations52
TAIWAN SEMICONDUCTOR MFG
8 patentsUS8869436B2Oct 28, 2014
Resistive switching random access memory structure and method to recreate filament and recover resistance window
TAIWAN SEMICONDUCTOR MFG40 citations94
US9019743B2Apr 28, 2015
Method and structure for resistive switching random access memory with high reliable and high density
TAIWAN SEMICONDUCTOR MFG15 citations84
US9361980B1Jun 7, 2016
RRAM array using multiple reset voltages and method of resetting RRAM array using multiple reset voltages
TAIWAN SEMICONDUCTOR MFG6 citations73
US9343151B1May 17, 2016
Resistive random access memory and method of resetting a resistive random access memory
TAIWAN SEMICONDUCTOR MFG1 citations52
US9286973B2Mar 15, 2016
Device and method for forming resistive random access memory cell
TAIWAN SEMICONDUCTOR MFG0 citations52
US9286979B2Mar 15, 2016
Method and structure for resistive switching random access memory with high reliable and high density
TAIWAN SEMICONDUCTOR MFG0 citations52
US9087577B2Jul 21, 2015
Hybrid memory
TAIWAN SEMICONDUCTOR MFG0 citations52
US8953370B2Feb 10, 2015
Memory cell with decoupled read/write path
TAIWAN SEMICONDUCTOR MFG1 citations52
TAIWAN SEMICONDCUTOR MFG COMPANY LTD
1 patentTING YU-WEI
1 patentNANYA TECHONOLGY CORP
1 patentShowing the top 50 of 59 patents by PatentIndex Score.