P

Inventor

LEE ZHI-CHENG

TW33 patents
⚠️ This page may combine multiple inventors who share the name “LEE ZHI-CHENG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

UNITED MICROELECTRONICS CORP

25 patents
US11239327B2Feb 1, 2022

HEMT and method of adjusting electron density of 2DEG

UNITED MICROELECTRONICS CORP18 citations85
US11088271B2Aug 10, 2021

High electron mobility transistor and method for fabricating the same

UNITED MICROELECTRONICS CORP6 citations84
US8003461B1Aug 23, 2011

Method of fabricating efuse structure, resistor sturcture and transistor sturcture

UNITED MICROELECTRONICS CORP7 citations84
US11749748B2Sep 5, 2023

High electron mobility transistor and method for fabricating the same

UNITED MICROELECTRONICS CORP2 citations73
US10629728B1Apr 21, 2020

Semiconductor device and fabrication method thereof

UNITED MICROELECTRONICS CORP3 citations73
US10566244B2Feb 18, 2020

Semiconductor device and method for fabricating the same

UNITED MICROELECTRONICS CORP3 citations73
US9640661B1May 2, 2017

FinFET having a fin and a V-shaped epitaxial layer formed on the top surface of the fin and method for fabricating the same

UNITED MICROELECTRONICS CORP2 citations73
US11380777B2Jul 5, 2022

Method for forming a high-voltage metal-oxide-semiconductor transistor device

UNITED MICROELECTRONICS CORP2 citations72
US10103265B1Oct 16, 2018

Complementary metal oxide semiconductor device and method of forming the same

UNITED MICROELECTRONICS CORP5 citations67
US12396195B2Aug 19, 2025

High electron mobility transistor device and manufacturing method thereof

UNITED MICROELECTRONICS CORP1 citations62
US12132095B2Oct 29, 2024

Method of fabricating metal gate transistor

UNITED MICROELECTRONICS CORP0 citations62
US12107157B2Oct 1, 2024

High electron mobility transistor and method for fabricating the same

UNITED MICROELECTRONICS CORP0 citations62
US11715784B2Aug 1, 2023

Method for forming a high-voltage metal-oxide-semiconductor transistor device

UNITED MICROELECTRONICS CORP0 citations62
US11652154B2May 16, 2023

Method of fabricating metal gate transistor

UNITED MICROELECTRONICS CORP0 citations62
US11610973B2Mar 21, 2023

High voltage transistor structure and method of fabricating the same

UNITED MICROELECTRONICS CORP0 citations62
US11527652B2Dec 13, 2022

Semiconductor process

UNITED MICROELECTRONICS CORP0 citations62
US11251279B2Feb 15, 2022

High voltage transistor structure and method of fabricating the same

UNITED MICROELECTRONICS CORP0 citations62
US11127838B2Sep 21, 2021

Method of fabricating metal gate transistor

UNITED MICROELECTRONICS CORP0 citations62
US11011430B2May 18, 2021

Semiconductor device and method for fabricating the same

UNITED MICROELECTRONICS CORP0 citations62
US12107121B2Oct 1, 2024

Method for forming air gap between gate dielectric layer and spacer

UNITED MICROELECTRONICS CORP0 citations60
US10861974B2Dec 8, 2020

Semiconductor structure and process thereof

UNITED MICROELECTRONICS CORP0 citations52
US10756209B2Aug 25, 2020

Semiconductor device

UNITED MICROELECTRONICS CORP0 citations52
US10014406B2Jul 3, 2018

Semiconductor device and method of forming the same

UNITED MICROELECTRONICS CORP1 citations52
US10629734B2Apr 21, 2020

Fabricating method of fin structure with tensile stress and complementary FinFET structure

UNITED MICROELECTRONICS CORP0 citations45
US10229995B2Mar 12, 2019

Fabricating method of fin structure with tensile stress and complementary FinFET structure

UNITED MICROELECTRONICS CORP0 citations45

HSU CHE-HUA

4 patents

HWANG GUANG-YAW

1 patent

LIAO PO-JUI

1 patent

CHIEN CHIN-CHENG

1 patent

LAI CHIEN-MING

1 patent