P

Inventor

HWANG YOUNG NAM

KR34 patents
⚠️ This page may combine multiple inventors who share the name “HWANG YOUNG NAM”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

23 patents
US7323708B2Jan 29, 2008

Phase change memory devices having phase change area in porous dielectric layer

SAMSUNG ELECTRONICS CO LTD152 citations99
US7067837B2Jun 27, 2006

Phase-change memory devices

SAMSUNG ELECTRONICS CO LTD108 citations98
US7042001B2May 9, 2006

Phase change memory devices including memory elements having variable cross-sectional areas

SAMSUNG ELECTRONICS CO LTD284 citations98
US7042760B2May 9, 2006

Phase-change memory and method having restore function

SAMSUNG ELECTRONICS CO LTD67 citations98
US6806528B2Oct 19, 2004

Phase-changeable memory devices having phase-changeable material regions with lateral contacts and methods of fabrication therefor

SAMSUNG ELECTRONICS CO LTD53 citations96
US7105396B2Sep 12, 2006

Phase changeable memory cells and methods of fabricating the same

SAMSUNG ELECTRONICS CO LTD22 citations93
US7018911B2Mar 28, 2006

Methods for fabrication for phase-changeable memory devices having phase-changeable material regions with lateral contacts

SAMSUNG ELECTRONICS CO LTD31 citations93
US6995388B2Feb 7, 2006

Phase changeable memory devices and methods of forming the same in which an upper electrode includes a tip that extends toward a lower electrode

SAMSUNG ELECTRONICS CO LTD24 citations93
US7482616B2Jan 27, 2009

Semiconductor devices having phase change memory cells, electronic systems employing the same and methods of fabricating the same

SAMSUNG ELECTRONICS CO LTD39 citations92
US7411208B2Aug 12, 2008

Phase-change memory device having a barrier layer and manufacturing method

SAMSUNG ELECTRONICS CO LTD20 citations92
US7214957B2May 8, 2007

PRAMS having phase-change layer pattern with electrode contact area and methods of forming the same

SAMSUNG ELECTRONICS CO LTD28 citations92
US7969798B2Jun 28, 2011

Phase change memory devices and read methods using elapsed time-based read voltages

SAMSUNG ELECTRONICS CO LTD40 citations91
US7295463B2Nov 13, 2007

Phase-changeable memory device and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD20 citations89
US8026543B2Sep 27, 2011

Semiconductor devices having phase change memory cells, electronic systems employing the same and methods of fabricating the same

SAMSUNG ELECTRONICS CO LTD12 citations84
US11995417B2May 28, 2024

Neural processing unit, neural processing system, and application system

SAMSUNG ELECTRONICS CO LTD3 citations74
US11733968B2Aug 22, 2023

Neural processing unit, neural processing system, and application system

SAMSUNG ELECTRONICS CO LTD0 citations62
US9583705B2Feb 28, 2017

Method of fabricating semiconductor device

SAMSUNG ELECTRONICS CO LTD0 citations52
US9136474B2Sep 15, 2015

Method of fabricating phase-change random access memory device

SAMSUNG ELECTRONICS CO LTD0 citations52
US7910398B2Mar 22, 2011

Phase-change memory device and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD0 citations52
US7514704B2Apr 7, 2009

Phase-change memory device and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD1 citations52
US7351991B2Apr 1, 2008

Methods for forming phase-change memory devices

SAMSUNG ELECTRONICS CO LTD0 citations52
US11651201B2May 16, 2023

Memory device including arithmetic circuit and neural network system including the same

SAMSUNG ELECTRONICS CO LTD0 citations51
US7700430B2Apr 20, 2010

Phase-changeable memory device and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD1 citations49

SAMSUNG ELECTRO MECH

6 patents

KOLON INC

2 patents

HWANG YOUNG-NAM

2 patents

LEE KYUNG HO

1 patent