Inventor
WIDDERSHOVEN FRANCISCUS PETRUS
BE26 patents
⚠️ This page may combine multiple inventors who share the name “WIDDERSHOVEN FRANCISCUS PETRUS”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
NXP BV
11 patentsUS7214579B2May 8, 2007
Self-aligned 2-bit “double poly CMP” flash memory cell
NXP BV123 citations97
US7529142B2May 5, 2009
Data processing device with a WOM memory
NXP BV11 citations84
US7741182B2Jun 22, 2010
Method of fabricating a dual gate FET
NXP BV18 citations83
US7177974B2Feb 13, 2007
Data processing device with a memory location in which data is stored according to a WOM (write once memory) code
NXP BV10 citations83
US7307267B2Dec 11, 2007
Electric device with phase change material and parallel heater
NXP BV12 citations82
US9435802B2Sep 6, 2016
Sensor, a sensor array, and a method of operating a sensor
NXP BV3 citations73
US10998489B2May 4, 2021
Magnetic shielding structure for MRAM array
NXP BV1 citations62
US10250258B2Apr 2, 2019
Device and method for detecting semiconductor substrate thickness
NXP BV1 citations61
US9921228B2Mar 20, 2018
Electronic lateral flow test arrangement and method
NXP BV1 citations52
US8994194B2Mar 31, 2015
Semiconductor device having Au—Cu electrodes, and method of manufacturing semiconductor device
NXP BV0 citations48
US10416034B2Sep 17, 2019
Method and system for analysis of pixelated capacitive sensor signals
NXP BV0 citations41
KONINKL PHILIPS ELECTRONICS NV
10 patentsUS6642103B2Nov 4, 2003
Semiconductor device and method of manufacturing the same
KONINKL PHILIPS ELECTRONICS NV76 citations95
US6472706B2Oct 29, 2002
Semiconductor device
KONINKL PHILIPS ELECTRONICS NV53 citations92
US6980472B2Dec 27, 2005
Device and method to read a 2-transistor flash memory cell
KONINKL PHILIPS ELECTRONICS NV20 citations91
US6885058B2Apr 26, 2005
Semiconductor device and method of manufacturing such a semiconductor device
KONINKL PHILIPS ELECTRONICS NV23 citations90
US7119353B2Oct 10, 2006
Electric device with phase change material and method of manufacturing the same
KONINKL PHILIPS ELECTRONICS NV27 citations89
US6701408B2Mar 2, 2004
Data processing device with a memory location in which data is stored according to a WOM code
KONINKL PHILIPS ELECTRONICS NV11 citations73
US6437398B2Aug 20, 2002
One-time UV-programmable non-volatile semiconductor memory and method of programming such a semiconductor memory
KONINKL PHILIPS ELECTRONICS NV9 citations73
US6984558B2Jan 10, 2006
Method of manufacturing a semiconductor device with non-volatile memory comprising a memory cell with an access gate and with a control gate and a charge storage region
KONINKL PHILIPS ELECTRONICS NV4 citations61
US6559711B2May 6, 2003
Circuit for providing a constant current
KONINKL PHILIPS ELECTRONICS NV2 citations61
US6969645B2Nov 29, 2005
Method of manufacturing a semiconductor device comprising a non-volatile memory with memory cells
KONINKL PHILIPS ELECTRONICS NV0 citations40