Inventor
TRAN LUNG
US24 patents
⚠️ This page may combine multiple inventors who share the name “TRAN LUNG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
HEWLETT PACKARD DEVELOPMENT CO
20 patentsUS6750491B2Jun 15, 2004
Magnetic memory device having soft reference layer
HEWLETT PACKARD DEVELOPMENT CO118 citations99
US6584589B1Jun 24, 2003
Self-testing of magneto-resistive memory arrays
HEWLETT PACKARD DEVELOPMENT CO88 citations98
US7180770B2Feb 20, 2007
Series diode thermally assisted MRAM
HEWLETT PACKARD DEVELOPMENT CO72 citations97
US6781906B2Aug 24, 2004
Memory cell sensing integrator
HEWLETT PACKARD DEVELOPMENT CO86 citations97
US7560215B2Jul 14, 2009
Printed circuit board printing system and method using liquid electrophotographic printing
HEWLETT PACKARD DEVELOPMENT CO27 citations92
US6649423B2Nov 18, 2003
Method for modifying switching field characteristics of magnetic tunnel junctions
HEWLETT PACKARD DEVELOPMENT CO15 citations92
US7002820B2Feb 21, 2006
Semiconductor storage device
HEWLETT PACKARD DEVELOPMENT CO12 citations82
US6842389B2Jan 11, 2005
System for and method of four-conductor magnetic random access memory cell and decoding scheme
HEWLETT PACKARD DEVELOPMENT CO13 citations82
US6839270B2Jan 4, 2005
System for and method of accessing a four-conductor magnetic random access memory
HEWLETT PACKARD DEVELOPMENT CO16 citations82
US7668487B2Feb 23, 2010
Printed circuit board printing system
HEWLETT PACKARD DEVELOPMENT CO6 citations74
US6906941B2Jun 14, 2005
Magnetic memory structure
HEWLETT PACKARD DEVELOPMENT CO9 citations74
US6891212B2May 10, 2005
Magnetic memory device having soft reference layer
HEWLETT PACKARD DEVELOPMENT CO9 citations74
US6803274B2Oct 12, 2004
Magnetic memory cell having an annular data layer and a soft reference layer
HEWLETT PACKARD DEVELOPMENT CO8 citations74
US6795281B2Sep 21, 2004
Magneto-resistive device including soft synthetic ferrimagnet reference layer
HEWLETT PACKARD DEVELOPMENT CO7 citations74
US7057920B2Jun 6, 2006
Two conductor thermally assisted magnetic memory
HEWLETT PACKARD DEVELOPMENT CO7 citations70
US7196957B2Mar 27, 2007
Magnetic memory structure using heater lines to assist in writing operations
HEWLETT PACKARD DEVELOPMENT CO2 citations63
US6925003B2Aug 2, 2005
Magnetic memory cell structure
HEWLETT PACKARD DEVELOPMENT CO4 citations63
US6924539B2Aug 2, 2005
Magnetic memory cell having an annular data layer and a soft reference layer
HEWLETT PACKARD DEVELOPMENT CO4 citations63
US6903403B2Jun 7, 2005
Magnetic memory cell having an annular data layer and a soft reference layer
HEWLETT PACKARD DEVELOPMENT CO3 citations63
US6828610B2Dec 7, 2004
Method for modifying switching field characteristics of magnetic tunnel junctions
HEWLETT PACKARD DEVELOPMENT CO2 citations63
SAMSUNG ELECTRONICS CO LTD
3 patentsUS7391641B2Jun 24, 2008
Multi-layered magnetic memory structures
SAMSUNG ELECTRONICS CO LTD2 citations63
US7267997B1Sep 11, 2007
Process for forming magnetic memory structures
SAMSUNG ELECTRONICS CO LTD2 citations63
US7457153B1Nov 25, 2008
Integrated circuit memory devices having magnetic memory cells therein that utilize dual-ferromagnetic data layers
SAMSUNG ELECTRONICS CO LTD0 citations52