P

Inventor

TRAN LUNG

US24 patents
⚠️ This page may combine multiple inventors who share the name “TRAN LUNG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

HEWLETT PACKARD DEVELOPMENT CO

20 patents
US6750491B2Jun 15, 2004

Magnetic memory device having soft reference layer

HEWLETT PACKARD DEVELOPMENT CO118 citations99
US6584589B1Jun 24, 2003

Self-testing of magneto-resistive memory arrays

HEWLETT PACKARD DEVELOPMENT CO88 citations98
US7180770B2Feb 20, 2007

Series diode thermally assisted MRAM

HEWLETT PACKARD DEVELOPMENT CO72 citations97
US6781906B2Aug 24, 2004

Memory cell sensing integrator

HEWLETT PACKARD DEVELOPMENT CO86 citations97
US7560215B2Jul 14, 2009

Printed circuit board printing system and method using liquid electrophotographic printing

HEWLETT PACKARD DEVELOPMENT CO27 citations92
US6649423B2Nov 18, 2003

Method for modifying switching field characteristics of magnetic tunnel junctions

HEWLETT PACKARD DEVELOPMENT CO15 citations92
US7002820B2Feb 21, 2006

Semiconductor storage device

HEWLETT PACKARD DEVELOPMENT CO12 citations82
US6842389B2Jan 11, 2005

System for and method of four-conductor magnetic random access memory cell and decoding scheme

HEWLETT PACKARD DEVELOPMENT CO13 citations82
US6839270B2Jan 4, 2005

System for and method of accessing a four-conductor magnetic random access memory

HEWLETT PACKARD DEVELOPMENT CO16 citations82
US7668487B2Feb 23, 2010

Printed circuit board printing system

HEWLETT PACKARD DEVELOPMENT CO6 citations74
US6906941B2Jun 14, 2005

Magnetic memory structure

HEWLETT PACKARD DEVELOPMENT CO9 citations74
US6891212B2May 10, 2005

Magnetic memory device having soft reference layer

HEWLETT PACKARD DEVELOPMENT CO9 citations74
US6803274B2Oct 12, 2004

Magnetic memory cell having an annular data layer and a soft reference layer

HEWLETT PACKARD DEVELOPMENT CO8 citations74
US6795281B2Sep 21, 2004

Magneto-resistive device including soft synthetic ferrimagnet reference layer

HEWLETT PACKARD DEVELOPMENT CO7 citations74
US7057920B2Jun 6, 2006

Two conductor thermally assisted magnetic memory

HEWLETT PACKARD DEVELOPMENT CO7 citations70
US7196957B2Mar 27, 2007

Magnetic memory structure using heater lines to assist in writing operations

HEWLETT PACKARD DEVELOPMENT CO2 citations63
US6925003B2Aug 2, 2005

Magnetic memory cell structure

HEWLETT PACKARD DEVELOPMENT CO4 citations63
US6924539B2Aug 2, 2005

Magnetic memory cell having an annular data layer and a soft reference layer

HEWLETT PACKARD DEVELOPMENT CO4 citations63
US6903403B2Jun 7, 2005

Magnetic memory cell having an annular data layer and a soft reference layer

HEWLETT PACKARD DEVELOPMENT CO3 citations63
US6828610B2Dec 7, 2004

Method for modifying switching field characteristics of magnetic tunnel junctions

HEWLETT PACKARD DEVELOPMENT CO2 citations63

SAMSUNG ELECTRONICS CO LTD

3 patents

HEWLETT PACKARD CO

1 patent