Inventor

ZHOU FEI

US300 patents

⚠️ This page may combine multiple inventors who share the name “ZHOU FEI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

ZHOU FEI

SANDISK TECHNOLOGIES LLC

Three-dimensional memory device with annular blocking dielectrics and discrete charge storage elements and method of making thereof

Three-dimensional semiconductor chip containing memory die bonded to both sides of a support die and methods of making the same

Three-dimensional memory device containing air gap rails and method of making thereof

Three-dimensional memory device with annular blocking dielectrics and method of making thereof

Three-dimensional memory device containing composite word lines including a metal silicide and an elemental metal and method of making thereof

Method of making a three-dimensional memory device using a multi-step hot phosphoric acid wet etch process

Three-dimensional memory device containing ferroelectric memory elements encapsulated by transition metal nitride materials and method of making thereof

Reusable support substrate for formation and transfer of semiconductor devices and methods of using the same

Three-dimensional memory device including composite word lines and multi-strip select lines and method for making the same

Three-dimensional memory device using epitaxial semiconductor channels and a buried source line and method of making the same

Three-dimensional memory device including composite word lines and multi-strip select lines and method for making the same

Three-dimensional multilevel device containing seamless unidirectional metal layer fill and method of making same

Three-dimensional memory device containing word lines formed by selective tungsten growth on nucleation controlling surfaces and methods of manufacturing the same

Three-dimensional phase change memory array including discrete middle electrodes and methods of making the same

Three-dimensional phase change memory array including discrete middle electrodes and methods of making the same

Three dimensional memory device containing multilayer wordline barrier films and method of making thereof

Three-dimensional memory device with graded word lines and methods of making the same

Three-dimensional memory device with partially discrete charge storage regions and method of making thereof

Three-dimensional memory device including metal silicide source regions and methods for forming the same

Three-dimensional memory device including wrap around word lines and methods of forming the same

Bonded assembly containing metal-organic framework bonding dielectric and methods of forming the same

Three-dimensional semiconductor chip containing memory die bonded to both sides of a support die and methods of making the same

Three-dimensional memory device containing epitaxial ferroelectric memory elements and methods for forming the same

Three-dimensional memory device including replacement crystalline channels and methods of making the same

Three-dimensional memory device having an epitaxial vertical semiconductor channel and method for making the same

Method of forming seamless drain-select-level electrodes for a three-dimensional memory device and structures formed by the same

Three-dimensional flat NAND memory device having high mobility channels and methods of making the same

Three-dimensional memory device including contact via structures that extend through word lines and method of making the same

Three-dimensional memory device containing compositionally graded word line diffusion barrier layer for and methods of forming the same

Semiconductor structure containing reentrant shaped bonding pads and methods of forming the same

Three-dimensional memory devices using carbon-doped aluminum oxide backside blocking dielectric layer for etch resistivity enhancement and methods of making the same

Three-dimensional memory device having stressed vertical semiconductor channels and method of making the same

Three-dimensional memory device including vertically offset drain select level layers and method of making thereof

Three-dimensional memory device with amorphous barrier layer and method of making thereof

SYBASE INC

Distributed database system providing data and space management methodology

Distributed database system providing data and space management methodology

Database system providing self-tuned parallel database recovery

ASTRAZENECA AB

Oxazolidinones as antibacterial agents

Compounds and methods for treating bacterial infections

3-cyclyl-5-(nitrogen-containing 5-membered ring)methyl-oxazolidinone derivatives and their use as antibacterial agents

LIN MEI-LIN LINDA

Distributed database system providing data and space management methodology

Distributed database system providing data and space management methodology

SEMICONDUCTOR MFG INT SHANGHAI CORP

Fabrication method of a semiconductor structure by a gate cutting process with multiple sidewall spacers formation in a dummy gate opening

Semiconductor structures and fabrication methods thereof

BARVIAN KEVIN

Fused, spirocyclic heteroaromatic compounds for the treatment of bacterial infections

SHENZHEN EASLOC TECH CO LTD

Electronic lock

ENTASIS THERAPEUTICS LTD

Compounds and methods for treating bacterial infections

SAP SE

In-memory row storage durability

HUAWEI TECH CO LTD

Method and system for data synchronization

BASARAB GREGORY

Antibacterial piperdine derivatives