Inventor

SHARANGPANI RAHUL

US119 patents

⚠️ This page may combine multiple inventors who share the name “SHARANGPANI RAHUL”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SHARANGPANI RAHUL

SANDISK TECHNOLOGIES LLC

Three-dimensional memory device with annular blocking dielectrics and discrete charge storage elements and method of making thereof

Three-dimensional semiconductor chip containing memory die bonded to both sides of a support die and methods of making the same

Three-dimensional memory device containing air gap rails and method of making thereof

Three-dimensional memory device with annular blocking dielectrics and method of making thereof

Three-dimensional memory device containing composite word lines including a metal silicide and an elemental metal and method of making thereof

Three-dimensional memory device containing a lateral source contact and method of making the same

Three-dimensional memory device containing ferroelectric memory elements encapsulated by transition metal nitride materials and method of making thereof

Three-dimensional memory device using epitaxial semiconductor channels and a buried source line and method of making the same

Three-dimensional multilevel device containing seamless unidirectional metal layer fill and method of making same

Three-dimensional memory device containing word lines formed by selective tungsten growth on nucleation controlling surfaces and methods of manufacturing the same

Three-dimensional phase change memory array including discrete middle electrodes and methods of making the same

Three-dimensional phase change memory array including discrete middle electrodes and methods of making the same

Three dimensional memory device containing multilayer wordline barrier films and method of making thereof

Three-dimensional memory device with graded word lines and methods of making the same

Three-dimensional memory device having drain select level isolation structure and method of making thereof

Cobalt-containing conductive layers for control gate electrodes in a memory structure

Three-dimensional memory device with partially discrete charge storage regions and method of making thereof

Vertical floating gate NAND with selectively deposited ALD metal films

Three-dimensional memory device including metal silicide source regions and methods for forming the same

Three-dimensional memory device including wrap around word lines and methods of forming the same

Three-dimensional semiconductor chip containing memory die bonded to both sides of a support die and methods of making the same

Three-dimensional memory device containing epitaxial ferroelectric memory elements and methods for forming the same

Three-dimensional memory device including replacement crystalline channels and methods of making the same

Three-dimensional memory device having an epitaxial vertical semiconductor channel and method for making the same

Method of forming seamless drain-select-level electrodes for a three-dimensional memory device and structures formed by the same

Three-dimensional memory device having multilayer word lines containing selectively grown cobalt or ruthenium and method of making the same

Three-dimensional memory device containing compositionally graded word line diffusion barrier layer for and methods of forming the same

Semiconductor structure containing reentrant shaped bonding pads and methods of forming the same

SANDISK TECHNOLOGIES INC

Fluorine-free word lines for three-dimensional memory devices

Floating gate ultrahigh density vertical NAND flash memory

Memory device containing cobalt silicide control gate electrodes and method of making thereof

Robust nucleation layers for enhanced fluorine protection and stress reduction in 3D NAND word lines

Memory device containing stress-tunable control gate electrodes

Three-dimensional memory structure with multi-component contact via structure and method of making thereof

Monolithic three dimensional NAND strings and methods of fabrication thereof

Crystalinity-dependent aluminum oxide etching for self-aligned blocking dielectric in a memory structure

Cobalt-containing conductive layers for control gate electrodes in a memory structure

Ruthenium nucleation layer for control gate electrodes in a memory structure

Semiconductor structure with concave blocking dielectric sidewall and method of making thereof by isotropically etching the blocking dielectric layer

Vertical floating gate NAND with selectively deposited ALD metal films

Method of making a three dimensional NAND device

Three dimensional NAND device and method of making thereof

Metal word lines for three dimensional memory devices

Method of selectively depositing floating gate material in a memory device

Differential etch of metal oxide blocking dielectric layer for three-dimensional memory devices

Three-dimensional memory devices having a single layer channel and methods of making thereof

Selective blocking dielectric formation in a three-dimensional memory structure

STEAG RTP SYSTEMS INC

System for depositing a material on a substrate using light energy

ASSOCIATES AG

Process for depositing a material on a substrate using light energy

MATTSON THERMAL PRODUCTS INC

High temperature short time curing of low dielectric constant materials using rapid thermal processing techniques