Inventor
JEONG HONG-SIK
KR23 patents
⚠️ This page may combine multiple inventors who share the name “JEONG HONG-SIK”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
21 patentsUS7916538B2Mar 29, 2011
Memory device employing NVRAM and flash memory cells
SAMSUNG ELECTRONICS CO LTD334 citations99
US7164598B2Jan 16, 2007
Methods of operating magnetic random access memory device using spin injection and related devices
SAMSUNG ELECTRONICS CO LTD25 citations92
US6836019B2Dec 28, 2004
Semiconductor device having multilayer interconnection structure and manufacturing method thereof
SAMSUNG ELECTRONICS CO LTD17 citations92
US6787906B1Sep 7, 2004
Bit line pad and borderless contact on bit line stud with localized etch stop layer formed in an undermined region
SAMSUNG ELECTRONICS CO LTD36 citations92
US6764941B2Jul 20, 2004
Bit line landing pad and borderless contact on bit line stud with localized etch stop layer and manufacturing method thereof
SAMSUNG ELECTRONICS CO LTD33 citations92
US6518671B1Feb 11, 2003
Bit line landing pad and borderless contact on bit line stud with localized etch stop layer and manufacturing method thereof
SAMSUNG ELECTRONICS CO LTD18 citations92
US6350649B1Feb 26, 2002
Bit line landing pad and borderless contact on bit line stud with etch stop layer and manufacturing method thereof
SAMSUNG ELECTRONICS CO LTD48 citations92
US6177320B1Jan 23, 2001
Method for forming a self aligned contact in a semiconductor device
SAMSUNG ELECTRONICS CO LTD50 citations91
US7295463B2Nov 13, 2007
Phase-changeable memory device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD20 citations89
US6815300B2Nov 9, 2004
Method for manufacturing semiconductor device having increased effective channel length
SAMSUNG ELECTRONICS CO LTD12 citations74
US6656790B2Dec 2, 2003
Method for manufacturing a semiconductor device including storage nodes of capacitor
SAMSUNG ELECTRONICS CO LTD9 citations74
US7843741B2Nov 30, 2010
Memory devices with selective pre-write verification and methods of operation thereof
SAMSUNG ELECTRONICS CO LTD6 citations73
US7569401B2Aug 4, 2009
Magnetic random access memory cells having split subdigit lines having cladding layers thereon and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD2 citations63
US7510963B2Mar 31, 2009
Semiconductor device having multilayer interconnection structure and manufacturing method thereof
SAMSUNG ELECTRONICS CO LTD2 citations63
US6812572B2Nov 2, 2004
Bit line landing pad and borderless contact on bit line stud with localized etch stop layer formed in void region, and manufacturing method thereof
SAMSUNG ELECTRONICS CO LTD4 citations62
US6720276B2Apr 13, 2004
Methods of forming spin on glass layers by curing remaining portions thereof
SAMSUNG ELECTRONICS CO LTD0 citations52
US7700430B2Apr 20, 2010
Phase-changeable memory device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD1 citations49
US7462523B2Dec 9, 2008
Semiconductor memory device and method for manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations48
US6900546B2May 31, 2005
Semiconductor memory device and method for manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations48
US7300888B2Nov 27, 2007
Methods of manufacturing integrated circuit devices having an encapsulated insulation layer
SAMSUNG ELECTRONICS CO LTD0 citations42
US8043924B2Oct 25, 2011
Methods of forming phase-change memory units, and methods of manufacturing phase-change memory devices using the same
SAMSUNG ELECTRONICS CO LTD0 citations41