Artificial neuron semiconductor element having three-dimensional structure and artificial neuron semiconductor system using same

Abstract

An artificial neuron semiconductor device having a three-dimensional structure includes a first electrode to which a clock signal is applied, a second electrode in which an output signal is generated, an insulation column, a plurality of electrode layers for receiving an electrical signal from at least one synapse circuit, and a phase change layer which is divided into at least two parts by the insulation column and is in contact with at least two side surfaces of the insulation column, and the phase change layer is phase-changed by the plurality of electrode layers.

The invention claimed is: 
     
       1. An artificial neuron semiconductor device having a three-dimensional structure comprises:
 a first electrode to which a clock signal is applied; 
 a second electrode in which an output signal is generated; 
 an insulation column; 
 a plurality of electrode layers for receiving an electrical signal from at least one synapse circuit; and 
 a phase change layer which is divided into at least two parts by the insulation column and is in contact with at least two side surfaces of the insulation column, wherein the phase change layer is phase-changed by the plurality of electrode layers. 
 
     
     
       2. The artificial neuron semiconductor device having the three-dimensional structure of  claim 1 , wherein the at least two parts of the phase change layer are connected to each other in an area under the insulation column. 
     
     
       3. The artificial neuron semiconductor device having the three-dimensional structure of  claim 1 , wherein the phase change layer comprises a chalcogenide. 
     
     
       4. The artificial neuron semiconductor device having the three-dimensional structure of  claim 1 , wherein the phase change layer is crystallized based on the electrical signal received through each of the electrode layers. 
     
     
       5. The artificial neuron semiconductor device having the three-dimensional structure of  claim 4 , wherein the crystallized phase change layer generates the output signal to the second electrode in response to the clock signal applied thereto through the first electrode. 
     
     
       6. The artificial neuron semiconductor device having the three-dimensional structure of  claim 1 , wherein the electrode layers are connected to the phase change layer in a vertical direction to have the three-dimensional structure. 
     
     
       7. An artificial neuron semiconductor system having a three-dimensional structure comprises:
 a soma device; and 
 a plurality of synapse devices connected to the soma device, each of the soma device and the synapse devices comprising:
 a first electrode to which a clock signal is applied; 
 a second electrode in which an output signal is generated; 
 an insulation column; 
 a plurality of electrode layers for receiving an electrical signal from at least one circuit; and 
 a phase change layer which is divided into at least two parts by the insulation column and is in contact with at least two side surfaces of the insulation column, wherein the phase change layer is phase-changed by the plurality of electrode layers. 
 
 
     
     
       8. The artificial neuron semiconductor system having the three-dimensional structure of  claim 7 , wherein the at least two parts of the phase change layer are connected to each other in an area under the insulation area. 
     
     
       9. The artificial neuron semiconductor system having the three-dimensional structure of  claim 7 , wherein the phase change layer included in each of the soma device and the synapse devices comprises a chalcogenide. 
     
     
       10. The artificial neuron semiconductor system having the three-dimensional structure of  claim 7 , wherein the phase change layer included in the soma device is crystallized based on the output signal of each of the synapse devices, which is received through each of the electrode layers included in the soma device. 
     
     
       11. The artificial neuron semiconductor system having the three-dimensional structure of  claim 10 , wherein the crystallized phase change layer generates the output signal to the second electrode included in the soma device in response to the clock signal applied thereto through the first electrode included in the soma device. 
     
     
       12. The artificial neuron semiconductor system having the three-dimensional structure of  claim 7 , wherein the electrode layers are connected to the phase change layer in a vertical direction to have the three-dimensional structure. 
     
     
       13. The artificial neuron semiconductor system having the three-dimensional structure of  claim 7 , wherein the phase change layer included in each of the synapse devices is crystallized based on the electrical signal received through each of the electrode layers included in each of the synapse devices. 
     
     
       14. The artificial neuron semiconductor system having the three-dimensional structure of  claim 13 , wherein the crystallized phase change layer generates the output signal to the second electrode included in each of the synapse devices in response to the clock signal applied thereto through the first electrode included in each of the synapse devices.