Inventor

SONG YUN HEUB

KR37 patents

⚠️ This page may combine multiple inventors who share the name “SONG YUN HEUB”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SONG YUN HEUB

SAMSUNG ELECTRONICS CO LTD

Method of manufacturing a semiconductor integrated circuit using a selective disposable spacer technique and semiconductor integrated circuit manufactured thereby

Method for fabricating NOR type flash memory device

Method for erasing memory cells in a nonvolatile memory

Semiconductor devices with bonding pads having intermetal dielectric layer of hybrid configuration and methods of fabricating the same

Semiconductor integrated circuit using a selective disposable spacer

Thin film transistor and vertical non-volatile memory device including transition metal-induced polycrystalline metal oxide channel layer

Method of manufacturing a semiconductor integrated circuit using a selective disposable spacer technique and semiconductor integrated circuit manufactured thereby

Three-dimensional flash memory with reduced wire length and manufacturing method therefor

Switching device having bi-directional drive characteristics and method of operating same

PCM-based neural network device

Method and system for inspection of defective MTJ cell in STT-MRAM

Selection element-integrated phase-change memory and method for producing same

Three-dimensional flash memory including middle metallization layer and manufacturing method thereof

Phase-change memory device having reversed phase-change characteristics and phase-change memory having highly integrated three-dimensional architecture using same

Three-dimensional flash memory with reduced wire length and manufacturing method therefor

Pulse driving apparatus for minimising asymmetry with respect to weight in synapse element, and method therefor

Phase-change memory device having reversed phase-change characteristics and phase-change memory having highly integrated three-dimensional architecture using same

Three dimensional flash memory element with middle source-drain line and manufacturing method thereof

Semiconductor device and methods of forming and operating the same

Thin film transistor and vertical non-volatile memory device including transition metal-induced polycrystalline metal oxide channel layer

Method for fabricating a semiconductor device

Three-dimensional semiconductor memory device, operating method of the same and electronic system including the same

Three-dimensional flash memory using ferroelectric layer on basis of back gate structure

Three-dimensional flash memory for improving integration and operation method thereof

3-dimensional flash memory having air gap, and method for manufacturing same

Three-dimensional semiconductor memory device including ferroelectric thin film and manufacturing method of the same

Methods of forming and operating semiconductor device

IUCF HYU

Three-dimensional flash memory with high degree of integration

Three-dimensional flash memory with back gate

Ferroelectric material-based three-dimensional flash memory, and manufacture thereof

Method for operating three-dimensional flash memory

UNIV HANYANG IND UNIV COOP FOUND

Three dimensional flash memory using electrode layers and/or interlayer insulation layers having different properties, and preparation method therefor

Three-dimensional semiconductor memory device, operating method of the same and electronic system including the same

Artificial neuron semiconductor element having three-dimensional structure and artificial neuron semiconductor system using same

INTELLECTUAL DISCOVERY CO LTD

Phase change memory and method of fabricating the phase change memory

SONG YUN HEUB

Three-dimensional flash memory using fringing effect and method for manufacturing

LEE SANG-EUN

Method of manufacturing a semiconductor integrated circuit using a selective disposal spacer technique and semiconductor integrated circuit manufactured thereby