Inventor

CHAE SOO-DOO

KR53 patents

⚠️ This page may combine multiple inventors who share the name “CHAE SOO-DOO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

CHAE SOO-DOO

SAMSUNG ELECTRONICS CO LTD

Non-volatile memory devices including vertical channels, methods of operating, and methods of fabricating the same

Nonvolatile silicon/oxide/nitride/silicon/nitride/oxide/silicon memory

Memory device with quantum dot and method for manufacturing the same

Complementary nonvolatile memory device

SONOS memory device

Method for manufacturing a single electron memory device having quantum dots between gate electrode and single electron storage element

Single electron memory device comprising quantum dots between gate electrode and single electron storage element and method for manufacturing the same

SONOS memory device having nano-sized trap elements

Method for manufacturing electronic device using thin film transistor with protective cap over flexible substrate

Nonvolatile semiconductor memory device having a gate stack and method of manufacturing the same

Single electron transistor having memory function

Method of fabricating a single electron transistor having memory function

Memory device with quantum dot and method for manufacturing the same

Thin film transistor with protective cap over flexible substrate, electronic device using the same, and manufacturing method thereof

Methods of manufacturing non-volatile memory devices having insulating layers treated using neutral beam irradiation

Memory device with quantum dot and method for manufacturing the same

Methods of operating and manufacturing logic device and semiconductor device including complementary nonvolatile memory device, and reading circuit for the same

Method for etching metal layer on a scale of nanometers

SONOS memory device having nano-sized trap elements

Method of operating a SONOS memory device

Multi-bit non-volatile memory device, method of operating the same, and method of fabricating the same

TOKYO ELECTRON LTD

Method of forming a self-aligned contact using selective SiO2 deposition

Wrap-around contact integration scheme

Selective atomic layer deposition (ALD) of protective caps to enhance extreme ultra-violet (EUV) etch resistance

Extreme ultraviolet lithography patterning method

Methods for fabricating semiconductor devices with backside power delivery network using laser liftoff layer

Method and structures to reduce resistivity in three-dimensional structures for microelectronic workpieces using material deposited in recesses at edges of holes in a multilayer stack

Raised pad formations for contacts in three-dimensional structures on microelectronic workpieces

Deposition process

Interconnect structure and method of forming the same

Method of integrated circuit fabrication with dual metal power rail

Extreme ultraviolet lithography patterning method

Technologies for fabricating a vertical DRAM structure

Fabricating three-dimensional semiconductor structures

Technologies for fabricating a 3D memory structure

Stress relief in semiconductor wafers

Interconnect structure and method of forming the same

Fabricating three-dimensional semiconductor structures

Plasma treatment method to enhance surface adhesion for lithography

Next generation bonding layer for 3D heterogeneous integration

Methods for fabricating isolation structures using directional beam process

Method of fabricating semiconductor device

CHAE SOO-DOO

Vertical memory devices and methods of manufacturing the same

PARK CHAN-JIN

Nonvolatile memory devices, nonvolatile memory cells and methods of manufacturing nonvolatile memory devices

JEON SANG-HUN

SONOS memory device using an amorphous memory node material

PARK YOON-DONG

Method of erasing a memory device including complementary nonvolatile memory devices

TIWARI SANDIP

Electro-mechanical transistor

HYUNDAI ELECTRONICS IND

Method for forming gate of semiconductor device

TEL EPION INC

Method of surface profile correction using gas cluster ion beam

JU HYUN-SU

Non-volatile memory device having a resistance-changeable element and method of forming the same