Inventor
XU DANIEL
US24 patents
⚠️ This page may combine multiple inventors who share the name “XU DANIEL”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
OVONYX INC
11 patentsUS6933516B2Aug 23, 2005
Forming tapered lower electrode phase-change memories
OVONYX INC279 citations99
US6800563B2Oct 5, 2004
Forming tapered lower electrode phase-change memories
OVONYX INC226 citations99
US6673700B2Jan 6, 2004
Reduced area intersection between electrode and programming element
OVONYX INC648 citations99
US6667900B2Dec 23, 2003
Method and apparatus to operate a memory cell
OVONYX INC277 citations99
US6566700B2May 20, 2003
Carbon-containing interfacial layer for phase-change memory
OVONYX INC706 citations99
US6563164B2May 13, 2003
Compositionally modified resistive electrode
OVONYX INC306 citations98
US6869841B2Mar 22, 2005
Carbon-containing interfacial layer for phase-change memory
OVONYX INC28 citations92
US6992365B2Jan 31, 2006
Reducing leakage currents in memories with phase-change material
OVONYX INC28 citations91
US6878618B2Apr 12, 2005
Compositionally modified resistive electrode
OVONYX INC9 citations73
US7422917B2Sep 9, 2008
Forming tapered lower electrode phase-change memories
OVONYX INC0 citations52
US7906391B2Mar 15, 2011
Reducing leakage currents in memories with phase-change material
OVONYX INC0 citations50
INTEL CORP
9 patentsUS6861267B2Mar 1, 2005
Reducing shunts in memories with phase-change material
INTEL CORP334 citations99
US6642102B2Nov 4, 2003
Barrier material encapsulation of programmable material
INTEL CORP175 citations99
US6462984B1Oct 8, 2002
Biasing scheme of floating unselected wordlines and bitlines of a diode-based memory array
INTEL CORP216 citations99
US6437383B1Aug 20, 2002
Dual trench isolation for a phase-change memory cell and method of making same
INTEL CORP262 citations99
US6404665B1Jun 11, 2002
Compositionally modified resistive electrode
INTEL CORP229 citations98
US6514805B2Feb 4, 2003
Trench sidewall profile for device isolation
INTEL CORP312 citations96
US6265292B1Jul 24, 2001
Method of fabrication of a novel flash integrated circuit
INTEL CORP81 citations93
US7064344B2Jun 20, 2006
Barrier material encapsulation of programmable material
INTEL CORP6 citations74
US7161225B2Jan 9, 2007
Reducing shunts in memories with phase-change material
INTEL CORP1 citations52