Inventor
CHO SEONGJAE
KR18 patents
⚠️ This page may combine multiple inventors who share the name “CHO SEONGJAE”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
UNIV GACHON IND ACAD COOP FOUND
9 patentsUS9935189B2Apr 3, 2018
Transistor having germanium channel on silicon nanowire and fabrication method thereof
UNIV GACHON IND ACAD COOP FOUND4 citations64
US11296086B2Apr 5, 2022
Feedback 1T DRAM device having localized partial insulating layers
UNIV GACHON IND ACAD COOP FOUND0 citations61
US11158732B2Oct 26, 2021
One-transistor DRAM cell device having quantum well structure
UNIV GACHON IND ACAD COOP FOUND1 citations59
US10068971B2Sep 4, 2018
Junctionless field-effect transistor having ultra-thin low-crystalline-silicon channel and fabrication method thereof
UNIV GACHON IND ACAD COOP FOUND0 citations51
US9245990B2Jan 26, 2016
Silicon-compatible germanium-based transistor with high-hole-mobility
UNIV GACHON IND ACAD COOP FOUND0 citations51
US10991813B1Apr 27, 2021
Fabrication method of semiconductor device having SIGe shell channel and semiconductor device fabricated by the same
UNIV GACHON IND ACAD COOP FOUND0 citations46
US10790359B2Sep 29, 2020
Intelligent semiconductor device having SiGe quantum well
UNIV GACHON IND ACAD COOP FOUND0 citations46
US10714477B2Jul 14, 2020
SiGe p-channel tri-gate transistor based on bulk silicon and fabrication method thereof
UNIV GACHON IND ACAD COOP FOUND0 citations36
US10651316B2May 12, 2020
Synaptic semiconductor device and neural networks using the same
UNIV GACHON IND ACAD COOP FOUND0 citations30
UNIV SEOUL NAT R & DB FOUND
4 patentsUS9799706B2Oct 24, 2017
Resistive random access memory device embedding tunnel insulating layer and memory array using the same and fabrication method thereof
UNIV SEOUL NAT R & DB FOUND6 citations84
US8878251B2Nov 4, 2014
Silicon-compatible compound junctionless field effect transistor
UNIV SEOUL NAT R & DB FOUND3 citations59
US9768381B2Sep 19, 2017
Resistive random access memory device having a nano-scale tip, memory array using the same and fabrication method thereof
UNIV SEOUL NAT R & DB FOUND1 citations51
US8847204B2Sep 30, 2014
Germanium electroluminescence device and fabrication method of the same
UNIV SEOUL NAT R & DB FOUND0 citations51