P

Inventor

OH YONG-CHUL

KR51 patents
⚠️ This page may combine multiple inventors who share the name “OH YONG-CHUL”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

32 patents
US6187651B1Feb 13, 2001

Methods of forming trench isolation regions using preferred stress relieving layers and techniques to inhibit the occurrence of voids

SAMSUNG ELECTRONICS CO LTD174 citations99
US6683364B2Jan 27, 2004

Integrated circuit devices including an isolation region defining an active region area and methods for manufacturing the same

SAMSUNG ELECTRONICS CO LTD118 citations98
US7223649B2May 29, 2007

Method of fabricating transistor of DRAM semiconductor device

SAMSUNG ELECTRONICS CO LTD59 citations97
US6326282B1Dec 4, 2001

Method of forming trench isolation in a semiconductor device and structure formed thereby

SAMSUNG ELECTRONICS CO LTD105 citations97
US6140242AOct 31, 2000

Method of forming an isolation trench in a semiconductor device including annealing at an increased temperature

SAMSUNG ELECTRONICS CO LTD60 citations96
US7977725B2Jul 12, 2011

Integrated circuit semiconductor device including stacked level transistors

SAMSUNG ELECTRONICS CO LTD20 citations92
US6642125B2Nov 4, 2003

Integrated circuits having adjacent P-type doped regions having shallow trench isolation structures without liner layers therein therebetween and methods of forming same

SAMSUNG ELECTRONICS CO LTD37 citations92
US6573168B2Jun 3, 2003

Methods for forming conductive contact body for integrated circuits using dummy dielectric layer

SAMSUNG ELECTRONICS CO LTD28 citations92
US6670689B2Dec 30, 2003

Semiconductor device having shallow trench isolation structure

SAMSUNG ELECTRONICS CO LTD22 citations89
US8373214B2Feb 12, 2013

Semiconductor devices with buried bit lines and methods of manufacturing semiconductor devices

SAMSUNG ELECTRONICS CO LTD7 citations84
US7902026B2Mar 8, 2011

Method of fabricating semiconductor device having vertical channel transistor

SAMSUNG ELECTRONICS CO LTD12 citations84
US7872302B2Jan 18, 2011

Semiconductor device having vertical transistor formed on an active pattern protruding from a substrate

SAMSUNG ELECTRONICS CO LTD10 citations84
US6372606B1Apr 16, 2002

Method of forming isolation trenches in a semiconductor device

SAMSUNG ELECTRONICS CO LTD18 citations84
US7999309B2Aug 16, 2011

Semiconductor device

SAMSUNG ELECTRONICS CO LTD6 citations74
US7943978B2May 17, 2011

Semiconductor device

SAMSUNG ELECTRONICS CO LTD5 citations74
US7586150B2Sep 8, 2009

Semiconductor devices with local recess channel transistors and methods of manufacturing the same

SAMSUNG ELECTRONICS CO LTD7 citations74
US7307008B2Dec 11, 2007

Methods of forming integrated circuit devices including a multi-layer poly film cell pad contact hole

SAMSUNG ELECTRONICS CO LTD7 citations74
US6875649B2Apr 5, 2005

Methods for manufacturing integrated circuit devices including an isolation region defining an active region area

SAMSUNG ELECTRONICS CO LTD5 citations74
US6974752B2Dec 13, 2005

Methods of fabricating integrated circuit devices having uniform silicide junctions

SAMSUNG ELECTRONICS CO LTD5 citations73
US6844240B2Jan 18, 2005

Semiconductor device having trench isolation

SAMSUNG ELECTRONICS CO LTD6 citations73
US9349724B2May 24, 2016

Semiconductor device having capacitors

SAMSUNG ELECTRONICS CO LTD6 citations70
US8053832B2Nov 8, 2011

Capacitor-less DRAM device

SAMSUNG ELECTRONICS CO LTD2 citations63
US7842572B2Nov 30, 2010

Methods of manufacturing semiconductor devices with local recess channel transistors

SAMSUNG ELECTRONICS CO LTD3 citations63
US7144798B2Dec 5, 2006

Semiconductor memory devices having extending contact pads and related methods

SAMSUNG ELECTRONICS CO LTD4 citations63
US7737512B2Jun 15, 2010

Integrated circuit devices having uniform silicide junctions

SAMSUNG ELECTRONICS CO LTD2 citations62
US7329927B2Feb 12, 2008

Integrated circuit devices having uniform silicide junctions

SAMSUNG ELECTRONICS CO LTD1 citations62
US8785998B2Jul 22, 2014

Semiconductor device having vertical channel transistor and methods of fabricating the same

SAMSUNG ELECTRONICS CO LTD3 citations61
US8362536B2Jan 29, 2013

Semiconductor device having vertical channel transistor and methods of fabricating the same

SAMSUNG ELECTRONICS CO LTD4 citations61
US8343831B2Jan 1, 2013

Semiconductor device and method of manufacturing the semiconductor device

SAMSUNG ELECTRONICS CO LTD0 citations52
US7833864B2Nov 16, 2010

Method of doping polysilicon layer that utilizes gate insulation layer to prevent diffusion of ion implanted impurities into underlying semiconductor substrate

SAMSUNG ELECTRONICS CO LTD0 citations51
US8039325B2Oct 18, 2011

Methods of fabricating semiconductor device having capacitorless one-transistor memory cell

SAMSUNG ELECTRONICS CO LTD0 citations50
US7863174B2Jan 4, 2011

Vertical pillar transistor

SAMSUNG ELECTRONICS CO LTD0 citations42

KIM HUI-JUNG

5 patents

OH YONG CHUL

4 patents

YOON JAE-MAN

2 patents

KIM KANG-UK

2 patents

KIM JI-YOUNG

1 patent

OH YONG-CHUL

1 patent

SAMUNG ELECTRONICS CO LTD

1 patent

CHUNG HYUN-WOO

1 patent

JEONG HOON

1 patent

Showing the top 50 of 51 patents by PatentIndex Score.