Inventor
OH YONG-CHUL
KR51 patents
⚠️ This page may combine multiple inventors who share the name “OH YONG-CHUL”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
32 patentsUS6187651B1Feb 13, 2001
Methods of forming trench isolation regions using preferred stress relieving layers and techniques to inhibit the occurrence of voids
SAMSUNG ELECTRONICS CO LTD174 citations99
US6683364B2Jan 27, 2004
Integrated circuit devices including an isolation region defining an active region area and methods for manufacturing the same
SAMSUNG ELECTRONICS CO LTD118 citations98
US7223649B2May 29, 2007
Method of fabricating transistor of DRAM semiconductor device
SAMSUNG ELECTRONICS CO LTD59 citations97
US6326282B1Dec 4, 2001
Method of forming trench isolation in a semiconductor device and structure formed thereby
SAMSUNG ELECTRONICS CO LTD105 citations97
US6140242AOct 31, 2000
Method of forming an isolation trench in a semiconductor device including annealing at an increased temperature
SAMSUNG ELECTRONICS CO LTD60 citations96
US7977725B2Jul 12, 2011
Integrated circuit semiconductor device including stacked level transistors
SAMSUNG ELECTRONICS CO LTD20 citations92
US6642125B2Nov 4, 2003
Integrated circuits having adjacent P-type doped regions having shallow trench isolation structures without liner layers therein therebetween and methods of forming same
SAMSUNG ELECTRONICS CO LTD37 citations92
US6573168B2Jun 3, 2003
Methods for forming conductive contact body for integrated circuits using dummy dielectric layer
SAMSUNG ELECTRONICS CO LTD28 citations92
US6670689B2Dec 30, 2003
Semiconductor device having shallow trench isolation structure
SAMSUNG ELECTRONICS CO LTD22 citations89
US8373214B2Feb 12, 2013
Semiconductor devices with buried bit lines and methods of manufacturing semiconductor devices
SAMSUNG ELECTRONICS CO LTD7 citations84
US7902026B2Mar 8, 2011
Method of fabricating semiconductor device having vertical channel transistor
SAMSUNG ELECTRONICS CO LTD12 citations84
US7872302B2Jan 18, 2011
Semiconductor device having vertical transistor formed on an active pattern protruding from a substrate
SAMSUNG ELECTRONICS CO LTD10 citations84
US6372606B1Apr 16, 2002
Method of forming isolation trenches in a semiconductor device
SAMSUNG ELECTRONICS CO LTD18 citations84
US7999309B2Aug 16, 2011
Semiconductor device
SAMSUNG ELECTRONICS CO LTD6 citations74
US7943978B2May 17, 2011
Semiconductor device
SAMSUNG ELECTRONICS CO LTD5 citations74
US7586150B2Sep 8, 2009
Semiconductor devices with local recess channel transistors and methods of manufacturing the same
SAMSUNG ELECTRONICS CO LTD7 citations74
US7307008B2Dec 11, 2007
Methods of forming integrated circuit devices including a multi-layer poly film cell pad contact hole
SAMSUNG ELECTRONICS CO LTD7 citations74
US6875649B2Apr 5, 2005
Methods for manufacturing integrated circuit devices including an isolation region defining an active region area
SAMSUNG ELECTRONICS CO LTD5 citations74
US6974752B2Dec 13, 2005
Methods of fabricating integrated circuit devices having uniform silicide junctions
SAMSUNG ELECTRONICS CO LTD5 citations73
US6844240B2Jan 18, 2005
Semiconductor device having trench isolation
SAMSUNG ELECTRONICS CO LTD6 citations73
US9349724B2May 24, 2016
Semiconductor device having capacitors
SAMSUNG ELECTRONICS CO LTD6 citations70
US8053832B2Nov 8, 2011
Capacitor-less DRAM device
SAMSUNG ELECTRONICS CO LTD2 citations63
US7842572B2Nov 30, 2010
Methods of manufacturing semiconductor devices with local recess channel transistors
SAMSUNG ELECTRONICS CO LTD3 citations63
US7144798B2Dec 5, 2006
Semiconductor memory devices having extending contact pads and related methods
SAMSUNG ELECTRONICS CO LTD4 citations63
US7737512B2Jun 15, 2010
Integrated circuit devices having uniform silicide junctions
SAMSUNG ELECTRONICS CO LTD2 citations62
US7329927B2Feb 12, 2008
Integrated circuit devices having uniform silicide junctions
SAMSUNG ELECTRONICS CO LTD1 citations62
US8785998B2Jul 22, 2014
Semiconductor device having vertical channel transistor and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD3 citations61
US8362536B2Jan 29, 2013
Semiconductor device having vertical channel transistor and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD4 citations61
US8343831B2Jan 1, 2013
Semiconductor device and method of manufacturing the semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations52
US7833864B2Nov 16, 2010
Method of doping polysilicon layer that utilizes gate insulation layer to prevent diffusion of ion implanted impurities into underlying semiconductor substrate
SAMSUNG ELECTRONICS CO LTD0 citations51
US8039325B2Oct 18, 2011
Methods of fabricating semiconductor device having capacitorless one-transistor memory cell
SAMSUNG ELECTRONICS CO LTD0 citations50
US7863174B2Jan 4, 2011
Vertical pillar transistor
SAMSUNG ELECTRONICS CO LTD0 citations42
KIM HUI-JUNG
5 patentsUS8552472B2Oct 8, 2013
Integrated circuit devices including vertical channel transistors with shield lines interposed between bit lines and methods of fabricating the same
KIM HUI-JUNG20 citations92
US8304824B2Nov 6, 2012
Semiconductor device comprising buried word lines
KIM HUI-JUNG8 citations83
US8274112B2Sep 25, 2012
Semiconductor memory device having pillar structures
KIM HUI-JUNG5 citations62
US8623724B2Jan 7, 2014
Method of manufacturing a semiconductor device including a capacitor electrically connected to a vertical pillar transistor
KIM HUI-JUNG1 citations51
US8247856B2Aug 21, 2012
Semiconductor device including a capacitor electrically connected to a vertical pillar transistor
KIM HUI-JUNG1 citations51
OH YONG CHUL
4 patentsYOON JAE-MAN
2 patentsKIM KANG-UK
2 patentsKIM JI-YOUNG
1 patentOH YONG-CHUL
1 patentSAMUNG ELECTRONICS CO LTD
1 patentCHUNG HYUN-WOO
1 patentJEONG HOON
1 patentShowing the top 50 of 51 patents by PatentIndex Score.