Inventor

VARGHESE SONY

US54 patents

⚠️ This page may combine multiple inventors who share the name “VARGHESE SONY”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

VARGHESE SONY

APPLIED MATERIALS INC

Structures and methods for forming dynamic random-access devices

CMOS over array of 3-D DRAM device

Gate all around device and method of formation using angled ions

Techniques for void-free material depositions

Gate all around device and method of formation using angled ions

Methods and structures for three-dimensional dynamic random-access memory

L-type wordline connection structure for three-dimensional memory

CMOS over array of 3-D DRAM device

Structures and methods for forming dynamic random-access devices

DRAM memory device having angled structures with sidewalls extending over bitlines

Methods for sub-lithography resolution patterning

Integration of device regions

Methods for forming dynamic random-access devices by implanting a drain through a spacer opening at the bottom of angled structures

Stress and overlay management for semiconductor processing

Gate devices and methods of formation using angled ions

Techniques for void-free material depositions

Localized stress modulation by implant to back of wafer

Techniques and device structure based upon directional seeding and selective deposition

Metal line patterning

Three dimensional memory device and method of fabrication

Integration of device regions

Fin damage reduction during punch through implantation of FinFET device

Fin damage reduction during punch through implantation of FinFET device

Replacement channel process for three-dimensional dynamic random access memory

Three-dimensional dynamic random-access memory (3D DRAM) gate all-around (GAA) design using stacked Si/SiGe

VARIAN SEMICONDUCTOR EQUIPMENT ASS INC

Techniques for improved spacer in nanosheet device

Replacement gate formation with angled etch and deposition

Increased isolation of diffusion breaks in FinFET devices using an angled etch

Method and device for power rail in a fin type field effect transistor

Dynamic random access device including two-dimensional array of fin structures

Spacer sculpting for forming semiconductor devices

Replacement gate formation with angled etch and deposition

Structure and method of forming fin device having improved fin liner

Spacer sculpting for forming semiconductor devices

Structure and method of forming fin device having improved fin liner

Device structure for forming semiconductor device having angled contacts

Device structure for forming semiconductor device having angled contacts

Techniques and structure for forming dynamic random access device

Gate spacer formation for scaled CMOS devices

Techniques for contact formation in self-aligned replacement gate device

MICRON TECHNOLOGY INC

Methods of manufacturing multi-die semiconductor device packages and related assemblies

Methods of manufacturing multi-die semiconductor device packages and related assemblies

Engineered carrier wafers

Methods of forming material within openings extending into a semiconductor construction, and semiconductor constructions having fluorocarbon material

Semiconductor constructions comprising dielectric material, and methods of forming dielectric fill within openings extending into semiconductor constructions

Semiconductor constructions having fluorocarbon material

Semiconductor constructions comprising dielectric material, and methods of forming dielectric fill within openings extending into semiconductor constructions

Semiconductor structures comprising polymeric materials

Semiconductor constructions comprising dielectric material

Methods for processing semiconductor devices