Inventor · disambiguated record
Mary Edmonds
Also filed as: EDMONDS MARY
8 granted patents·1 pending application·7 citations·filing 2014–2017
77Inventor score
Technology areasH10P
Files withAPPLIED MATERIALS INC9
Top patents by PatentIndex Score
9 records- 0181US9305780B2Self-limiting chemical vapor deposition and atomic layer deposition methodsAPPLIED MATERIALS INC·Filed 2014·Granted Apr 5, 2016·4 cites·12 claims
- 0277US9607920B2Self-limiting chemical vapor deposition and atomic layer deposition methodsAPPLIED MATERIALS INC·Filed 2016·Granted Mar 28, 2017·2 cites·18 claims
- 0366US9824889B2CVD silicon monolayer formation method and gate oxide ALD formation on III-V materialsAPPLIED MATERIALS INC·Filed 2015·Granted Nov 21, 2017·1 cites·13 claims
- 0457US10553425B2Self-limiting and saturating chemical vapor deposition of a silicon bilayer and ALDAPPLIED MATERIALS INC·Filed 2017·Granted Feb 4, 2020·0 cites·20 claims
- 0554US10373824B2CVD silicon monolayer formation method and gate oxide ALD formation on semiconductor materialsAPPLIED MATERIALS INC·Filed 2017·Granted Aug 6, 2019·0 cites·20 claims
- 0654US9773663B2Self-limiting and saturating chemical vapor deposition of a silicon bilayer and ALDAPPLIED MATERIALS INC·Filed 2016·Granted Sep 26, 2017·0 cites·20 claims
- 0749US10297441B2Low-temperature atomic layer deposition of boron nitride and BN structuresAPPLIED MATERIALS INC·Filed 2017·Granted May 21, 2019·0 cites·12 claims
- 0846US10262858B2Surface functionalization and passivation with a control layerAPPLIED MATERIALS INC·Filed 2017·Granted Apr 16, 2019·0 cites·20 claims
- 0936US2017040158A1Low temperature ald on semiconductor and metallic surfacesAPPLIED MATERIALS INC·Filed 2016·Application pending·0 cites
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →