Inventor

HIGASHI SHINTARO

JP9 patents

⚠️ This page may combine multiple inventors who share the name “HIGASHI SHINTARO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

KOJUNDO CHEMICAL LABORATORY CO LTD

5 patents

US12571099B2Mar 10, 2026

Bis(ethylcyclopentadienyl)tin, precursor for chemical vapor deposition, method of producing tin-containing thin film, and method of producing tin oxide thin film

KOJUNDO CHEMICAL LABORATORY CO LTD0 citations59

US11807939B2Nov 7, 2023

Atomic layer deposition method for metal thin films

KOJUNDO CHEMICAL LABORATORY CO LTD0 citations59

US11655538B2May 23, 2023

Precursor for chemical vapor deposition, and light-blocking container containing precursor for chemical vapor deposition and method for producing the same

KOJUNDO CHEMICAL LABORATORY CO LTD0 citations59

US12410514B2Sep 9, 2025

Vapor deposition source material used in production of film containing indium and one or more of the other metals, and the method of producing film containing indium and one or more of the other metals

KOJUNDO CHEMICAL LABORATORY CO LTD0 citations49

US10752992B2Aug 25, 2020

Atomic layer deposition method of metal-containing thin film

KOJUNDO CHEMICAL LABORATORY CO LTD0 citations48

KABUSHIKIKAISHA KOJUNDOKAGAKU

1 patent

US7635441B2Dec 22, 2009

Raw material for forming a strontium-containing thin film and process for preparing the raw material

KABUSHIKIKAISHA KOJUNDOKAGAKU14 citations90

MOGI TAKAYUKI

1 patent

US8747965B2Jun 10, 2014

Precursor for formation of europium-containing thin film, and method for forming europium-containing thin film

MOGI TAKAYUKI8 citations75

KADOKURA HIDEKIMI

1 patent

US8293327B2Oct 23, 2012

Process for forming the strontium-containing thin film

KADOKURA HIDEKIMI0 citations44

TOKYO ELECTRON LTD

1 patent

US7816282B2Oct 19, 2010

Method for forming SrTiO3 film

TOKYO ELECTRON LTD0 citations41