Atomic layer deposition method for metal thin films

Abstract

Provided is a method for depositing a metal thin film by atomic layer deposition (ALD) using an organometallic complex as a source material and without using radical species such as plasma and ozone, which have a possibility of deactivation. The method is an atomic layer deposition (ALD) method for metal thin films which includes: a process of supplying an organometallic complex having an aromatic anionic ligand and/or an alkyl ligand into a reaction chamber in which a substrate is installed; and a process of supplying a mixture gas containing a nucleophilic gas and an electrophilic gas into the reaction chamber, the ALD method substantially not using either one of a gas in a plasma or radical state and a gas containing oxygen atoms.

The invention claimed is: 
     
       1. An atomic layer deposition (ALD) method for metal thin films comprising:
 a process of supplying an organometallic complex having an alkyl ligand that coordinates to a noble metal into a reaction chamber in which a substrate is installed; and 
 a process of supplying a mixture gas containing a nucleophilic gas and an electrophilic gas into the reaction chamber wherein 
 the organometallic complex further has either or both of a hydride ligand and a phosphine ligand, in addition to the alkyl ligand, 
 the electrophilic gas is hydrogen and the nucleophilic gas is ammonia, and 
 the substrate is set at a temperature which is 3° C. or more lower than a thermal decomposition temperature of the organometallic complex in an inert gas; 
 the ALD method substantially not using either one of a gas in a plasma or radical state and a gas containing oxygen atoms.