P

Inventor

MATSUZAKI NOZOMU

JP66 patents
⚠️ This page may combine multiple inventors who share the name “MATSUZAKI NOZOMU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

RENESAS TECH CORP

25 patents
US6785165B2Aug 31, 2004

Semiconductor device

RENESAS TECH CORP71 citations98
US7700992B2Apr 20, 2010

Semiconductor device

RENESAS TECH CORP23 citations96
US7414283B2Aug 19, 2008

Semiconductor device

RENESAS TECH CORP29 citations96
US6972997B2Dec 6, 2005

Nonvolatile semiconductor memory device

RENESAS TECH CORP48 citations96
US7671404B2Mar 2, 2010

Fabrication method and structure of semiconductor non-volatile memory device

RENESAS TECH CORP13 citations93
US7667218B2Feb 23, 2010

Semiconductor integrated circuit device and method of manufacturing the same

RENESAS TECH CORP19 citations93
US7427791B2Sep 23, 2008

Method of forming a CMOS structure having gate insulation films of different thicknesses

RENESAS TECH CORP28 citations93
US7206216B2Apr 17, 2007

Semiconductor device with a non-erasable memory and/or a nonvolatile memory

RENESAS TECH CORP33 citations93
US7132718B2Nov 7, 2006

Fabrication method and structure of semiconductor non-volatile memory device

RENESAS TECH CORP23 citations93
US7130223B2Oct 31, 2006

Nonvolatile semiconductor memory device

RENESAS TECH CORP28 citations93
US6944056B2Sep 13, 2005

Semiconductor non-volatile storage device

RENESAS TECH CORP17 citations93
US7528036B2May 5, 2009

Non-volatile semiconductor memory and method of making same, and semiconductor device and method of making device

RENESAS TECH CORP18 citations92
US6833582B2Dec 21, 2004

Nonvolatile semiconductor memory device

RENESAS TECH CORP52 citations91
US7796426B2Sep 14, 2010

Semiconductor device

RENESAS TECH CORP16 citations84
US7781814B2Aug 24, 2010

Method of forming a CMOS structure having gate insulation films of different thicknesses

RENESAS TECH CORP8 citations84
US7778069B2Aug 17, 2010

Semiconductor device and its fabrication method

RENESAS TECH CORP11 citations84
US7692234B2Apr 6, 2010

Non-volatile semiconductor memory and method of making same, and semiconductor device and method of making device

RENESAS TECH CORP8 citations84
US7304345B2Dec 4, 2007

Non-volatile semiconductor memory and method of making same, and semiconductor device and method of making device

RENESAS TECH CORP4 citations74
US7141475B2Nov 28, 2006

Non-volatile semiconductor memory and method of making same, and semiconductor device and method of making device

RENESAS TECH CORP5 citations74
US7195976B2Mar 27, 2007

Non-volatile semiconductor memory and method of making same, and semiconductor device and method of making device

RENESAS TECH CORP6 citations73
US7714314B2May 11, 2010

Semiconductor device and method of manufacturing the same

RENESAS TECH CORP1 citations63
US7385838B2Jun 10, 2008

Semiconductor device with a non-erasable memory and/or a nonvolatile memory

RENESAS TECH CORP5 citations63
US7180793B2Feb 20, 2007

Semiconductor non-volatile storage device

RENESAS TECH CORP4 citations63
US6862220B2Mar 1, 2005

Semiconductor device

RENESAS TECH CORP5 citations63
US6842376B2Jan 11, 2005

Non-volatile semiconductor memory device for selectively re-checking word lines

RENESAS TECH CORP1 citations63

HITACHI LTD

12 patents

RENESAS ELECTRONICS CORP

7 patents

HITACHI ULSI SYS CO LTD

1 patent

HANZAWA SATORU

1 patent

MATSUI YUICHI

1 patent

TERAO MOTOYASU

1 patent

MATSUZAKI NOZOMU

1 patent

HISAMOTO DIGH

1 patent

Showing the top 50 of 66 patents by PatentIndex Score.