Inventor
MATSUZAKI NOZOMU
JP66 patents
⚠️ This page may combine multiple inventors who share the name “MATSUZAKI NOZOMU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
RENESAS TECH CORP
25 patentsUS6785165B2Aug 31, 2004
Semiconductor device
RENESAS TECH CORP71 citations98
US7700992B2Apr 20, 2010
Semiconductor device
RENESAS TECH CORP23 citations96
US7414283B2Aug 19, 2008
Semiconductor device
RENESAS TECH CORP29 citations96
US6972997B2Dec 6, 2005
Nonvolatile semiconductor memory device
RENESAS TECH CORP48 citations96
US7671404B2Mar 2, 2010
Fabrication method and structure of semiconductor non-volatile memory device
RENESAS TECH CORP13 citations93
US7667218B2Feb 23, 2010
Semiconductor integrated circuit device and method of manufacturing the same
RENESAS TECH CORP19 citations93
US7427791B2Sep 23, 2008
Method of forming a CMOS structure having gate insulation films of different thicknesses
RENESAS TECH CORP28 citations93
US7206216B2Apr 17, 2007
Semiconductor device with a non-erasable memory and/or a nonvolatile memory
RENESAS TECH CORP33 citations93
US7132718B2Nov 7, 2006
Fabrication method and structure of semiconductor non-volatile memory device
RENESAS TECH CORP23 citations93
US7130223B2Oct 31, 2006
Nonvolatile semiconductor memory device
RENESAS TECH CORP28 citations93
US6944056B2Sep 13, 2005
Semiconductor non-volatile storage device
RENESAS TECH CORP17 citations93
US7528036B2May 5, 2009
Non-volatile semiconductor memory and method of making same, and semiconductor device and method of making device
RENESAS TECH CORP18 citations92
US6833582B2Dec 21, 2004
Nonvolatile semiconductor memory device
RENESAS TECH CORP52 citations91
US7796426B2Sep 14, 2010
Semiconductor device
RENESAS TECH CORP16 citations84
US7781814B2Aug 24, 2010
Method of forming a CMOS structure having gate insulation films of different thicknesses
RENESAS TECH CORP8 citations84
US7778069B2Aug 17, 2010
Semiconductor device and its fabrication method
RENESAS TECH CORP11 citations84
US7692234B2Apr 6, 2010
Non-volatile semiconductor memory and method of making same, and semiconductor device and method of making device
RENESAS TECH CORP8 citations84
US7304345B2Dec 4, 2007
Non-volatile semiconductor memory and method of making same, and semiconductor device and method of making device
RENESAS TECH CORP4 citations74
US7141475B2Nov 28, 2006
Non-volatile semiconductor memory and method of making same, and semiconductor device and method of making device
RENESAS TECH CORP5 citations74
US7195976B2Mar 27, 2007
Non-volatile semiconductor memory and method of making same, and semiconductor device and method of making device
RENESAS TECH CORP6 citations73
US7714314B2May 11, 2010
Semiconductor device and method of manufacturing the same
RENESAS TECH CORP1 citations63
US7385838B2Jun 10, 2008
Semiconductor device with a non-erasable memory and/or a nonvolatile memory
RENESAS TECH CORP5 citations63
US7180793B2Feb 20, 2007
Semiconductor non-volatile storage device
RENESAS TECH CORP4 citations63
US6862220B2Mar 1, 2005
Semiconductor device
RENESAS TECH CORP5 citations63
US6842376B2Jan 11, 2005
Non-volatile semiconductor memory device for selectively re-checking word lines
RENESAS TECH CORP1 citations63
HITACHI LTD
12 patentsUS6307236B1Oct 23, 2001
Semiconductor integrated circuit device
HITACHI LTD81 citations97
US6461916B1Oct 8, 2002
Non-volatile semiconductor memory and method of making same, and semiconductor device and method of making the device
HITACHI LTD67 citations95
US6444554B1Sep 3, 2002
Method of making a non-volatile memory and semiconductor device
HITACHI LTD36 citations95
US6657248B1Dec 2, 2003
Semiconductor device having groove isolation structure and gate oxide films with different thickness
HITACHI LTD20 citations93
US6500715B2Dec 31, 2002
Method of forming a CMOS structure having gate insulation films of different thicknesses
HITACHI LTD24 citations93
US6617632B2Sep 9, 2003
Semiconductor device and a method of manufacturing the same
HITACHI LTD34 citations92
US5680066AOct 21, 1997
Signal transition detector circuit
HITACHI LTD15 citations82
US5619151AApr 8, 1997
Semiconductor device
HITACHI LTD14 citations74
US5091883AFeb 25, 1992
Semiconductor memory and microprocessor
HITACHI LTD7 citations72
US7955872B2Jun 7, 2011
Manufacturing method of semiconductor integrated circuit device using magnetic memory
HITACHI LTD2 citations63
US6711061B2Mar 23, 2004
Non-volatile semiconductor memory device for selectively re-checking word lines
HITACHI LTD4 citations63
US6459619B1Oct 1, 2002
Non-volatile semiconductor memory device for selectively re-checking word lines
HITACHI LTD2 citations63
RENESAS ELECTRONICS CORP
7 patentsUS7864568B2Jan 4, 2011
Semiconductor storage device
RENESAS ELECTRONICS CORP222 citations99
US8054680B2Nov 8, 2011
Semiconductor device
RENESAS ELECTRONICS CORP20 citations93
US8017986B2Sep 13, 2011
Semiconductor device
RENESAS ELECTRONICS CORP22 citations92
US8000126B2Aug 16, 2011
Semiconductor device with recording layer containing indium, germanium, antimony and tellurium
RENESAS ELECTRONICS CORP12 citations84
US9812211B2Nov 7, 2017
Semiconductor device
RENESAS ELECTRONICS CORP1 citations63
US8737116B2May 27, 2014
Semiconductor device and its manufacturing method
RENESAS ELECTRONICS CORP3 citations63
US8698224B2Apr 15, 2014
Semiconductor device
RENESAS ELECTRONICS CORP2 citations63
HITACHI ULSI SYS CO LTD
1 patentHANZAWA SATORU
1 patentMATSUI YUICHI
1 patentTERAO MOTOYASU
1 patentMATSUZAKI NOZOMU
1 patentHISAMOTO DIGH
1 patentShowing the top 50 of 66 patents by PatentIndex Score.