Inventor
LIN YU-MING
TW488 patents
⚠️ This page may combine multiple inventors who share the name “LIN YU-MING”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
23 patentsUS11423966B2Aug 23, 2022
Memory array staircase structure
TAIWAN SEMICONDUCTOR MFG CO LTD23 citations95
US11404091B2Aug 2, 2022
Memory array word line routing
TAIWAN SEMICONDUCTOR MFG CO LTD17 citations94
US11222892B2Jan 11, 2022
Backside power rail and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD16 citations94
US10157790B1Dec 18, 2018
Semiconductor device and method for manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD29 citations94
US11776602B2Oct 3, 2023
Memory array staircase structure
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations86
US11621352B2Apr 4, 2023
Semiconductor device and method of manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations86
US11581337B2Feb 14, 2023
Three-dimensional memory device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD7 citations86
US11569250B2Jan 31, 2023
Ferroelectric memory device using back-end-of-line (BEOL) thin film access transistors and methods for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations86
US11515332B2Nov 29, 2022
Ferroelectric memory device and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD8 citations86
US11502128B2Nov 15, 2022
Memory device and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD9 citations86
US11443987B2Sep 13, 2022
Semiconductor devices with backside air gap dielectric
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations86
US11217494B1Jan 4, 2022
Semiconductor devices and methods of manufacture
TAIWAN SEMICONDUCTOR MFG CO LTD9 citations86
US10937884B1Mar 2, 2021
Gate spacer with air gap for semiconductor device structure and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD10 citations86
US11527649B1Dec 13, 2022
Ferroelectric field effect transistor devices and methods for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD9 citations85
US11527553B2Dec 13, 2022
Three-dimensional memory device and method
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US11495618B2Nov 8, 2022
Three-dimensional memory device and method
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US11411011B2Aug 9, 2022
Semiconductor structure having memory device and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US11282920B2Mar 22, 2022
Semiconductor device with air gap on gate structure and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US10686074B2Jun 16, 2020
Fin field effect transistor (FinFET) device structure with doped region in source/drain structure and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD10 citations84
US10269636B2Apr 23, 2019
Semiconductor device and method of fabricating the same
TAIWAN SEMICONDUCTOR MFG CO LTD8 citations84
US10157988B1Dec 18, 2018
Fin field effect transistor (FinFET) device structure with dual spacers and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD8 citations84
US10134915B2Nov 20, 2018
2-D material transistor with vertical structure
TAIWAN SEMICONDUCTOR MFG CO LTD9 citations84
US10056473B1Aug 21, 2018
Semiconductor device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD10 citations83
IBM
9 patentsUS8344358B2Jan 1, 2013
Graphene transistor with a self-aligned gate
IBM25 citations93
US8053782B2Nov 8, 2011
Single and few-layer graphene based photodetecting devices
IBM32 citations93
US8878193B2Nov 4, 2014
Graphene channel-based devices and methods for fabrication thereof
IBM13 citations92
US7955931B2Jun 7, 2011
Method and apparatus for fabricating a carbon nanotube transistor
IBM18 citations92
US7482232B2Jan 27, 2009
Method for fabricating a nanotube field effect transistor
IBM16 citations92
US7141727B1Nov 28, 2006
Method and apparatus for fabricating a carbon nanotube transistor having unipolar characteristics
IBM25 citations92
US9064776B2Jun 23, 2015
Radiation hardened transistors based on graphene and carbon nanotubes
IBM12 citations84
US8900918B2Dec 2, 2014
Graphene channel-based devices and methods for fabrication thereof
IBM10 citations84
US8859439B1Oct 14, 2014
Solution-assisted carbon nanotube placement with graphene electrodes
IBM12 citations83
LIN YU-MING
7 patentsUS8673703B2Mar 18, 2014
Fabrication of graphene nanoelectronic devices on SOI structures
LIN YU-MING17 citations92
US8105928B2Jan 31, 2012
Graphene based switching device having a tunable bandgap
LIN YU-MING20 citations92
US8803131B2Aug 12, 2014
Metal-free integrated circuits comprising graphene and carbon nanotubes
LIN YU-MING11 citations84
US8796668B2Aug 5, 2014
Metal-free integrated circuits comprising graphene and carbon nanotubes
LIN YU-MING12 citations84
US8546246B2Oct 1, 2013
Radiation hardened transistors based on graphene and carbon nanotubes
LIN YU-MING14 citations84
US8455861B2Jun 4, 2013
Graphene based switching device having a tunable bandgap
LIN YU-MING8 citations84
US8242656B1Aug 14, 2012
Motor
LIN YU-MING17 citations84
AVOURIS PHAEDON
3 patentsUS8753965B2Jun 17, 2014
Graphene transistor with a self-aligned gate
AVOURIS PHAEDON5 citations84
US8455297B1Jun 4, 2013
Method to fabricate high performance carbon nanotube transistor integrated circuits by three-dimensional integration technology
AVOURIS PHAEDON10 citations84
US8445320B2May 21, 2013
Graphene channel-based devices and methods for fabrication thereof
AVOURIS PHAEDON8 citations84
UNITED MICROELECTRONICS CORP
2 patentsCHINESE PETROLEUM CORP
1 patentMASSACHUSETTS INST TECHNOLOGY
1 patentJENKINS KEITH A
1 patentNAT SCIENCE COUNCIL
1 patentFARMER DAMON BROOKS
1 patentAFZALI-ARDAKANI ALI
1 patentShowing the top 50 of 488 patents by PatentIndex Score.