P

Inventor

LIN YU-MING

TW488 patents
⚠️ This page may combine multiple inventors who share the name “LIN YU-MING”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TAIWAN SEMICONDUCTOR MFG CO LTD

23 patents
US11423966B2Aug 23, 2022

Memory array staircase structure

TAIWAN SEMICONDUCTOR MFG CO LTD23 citations95
US11404091B2Aug 2, 2022

Memory array word line routing

TAIWAN SEMICONDUCTOR MFG CO LTD17 citations94
US11222892B2Jan 11, 2022

Backside power rail and methods of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD16 citations94
US10157790B1Dec 18, 2018

Semiconductor device and method for manufacturing the same

TAIWAN SEMICONDUCTOR MFG CO LTD29 citations94
US11776602B2Oct 3, 2023

Memory array staircase structure

TAIWAN SEMICONDUCTOR MFG CO LTD6 citations86
US11621352B2Apr 4, 2023

Semiconductor device and method of manufacturing the same

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations86
US11581337B2Feb 14, 2023

Three-dimensional memory device and manufacturing method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD7 citations86
US11569250B2Jan 31, 2023

Ferroelectric memory device using back-end-of-line (BEOL) thin film access transistors and methods for forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD6 citations86
US11515332B2Nov 29, 2022

Ferroelectric memory device and method of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD8 citations86
US11502128B2Nov 15, 2022

Memory device and method of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD9 citations86
US11443987B2Sep 13, 2022

Semiconductor devices with backside air gap dielectric

TAIWAN SEMICONDUCTOR MFG CO LTD6 citations86
US11217494B1Jan 4, 2022

Semiconductor devices and methods of manufacture

TAIWAN SEMICONDUCTOR MFG CO LTD9 citations86
US10937884B1Mar 2, 2021

Gate spacer with air gap for semiconductor device structure and method for forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD10 citations86
US11527649B1Dec 13, 2022

Ferroelectric field effect transistor devices and methods for forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD9 citations85
US11527553B2Dec 13, 2022

Three-dimensional memory device and method

TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US11495618B2Nov 8, 2022

Three-dimensional memory device and method

TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US11411011B2Aug 9, 2022

Semiconductor structure having memory device and method of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US11282920B2Mar 22, 2022

Semiconductor device with air gap on gate structure and method for forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US10686074B2Jun 16, 2020

Fin field effect transistor (FinFET) device structure with doped region in source/drain structure and method for forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD10 citations84
US10269636B2Apr 23, 2019

Semiconductor device and method of fabricating the same

TAIWAN SEMICONDUCTOR MFG CO LTD8 citations84
US10157988B1Dec 18, 2018

Fin field effect transistor (FinFET) device structure with dual spacers and method for forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD8 citations84
US10134915B2Nov 20, 2018

2-D material transistor with vertical structure

TAIWAN SEMICONDUCTOR MFG CO LTD9 citations84
US10056473B1Aug 21, 2018

Semiconductor device and manufacturing method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD10 citations83

IBM

9 patents

LIN YU-MING

7 patents

AVOURIS PHAEDON

3 patents

UNITED MICROELECTRONICS CORP

2 patents

CHINESE PETROLEUM CORP

1 patent

MASSACHUSETTS INST TECHNOLOGY

1 patent

JENKINS KEITH A

1 patent

NAT SCIENCE COUNCIL

1 patent

FARMER DAMON BROOKS

1 patent

AFZALI-ARDAKANI ALI

1 patent

Showing the top 50 of 488 patents by PatentIndex Score.