Inventor
NITTA SHINICHI
JP29 patents
⚠️ This page may combine multiple inventors who share the name “NITTA SHINICHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TOSHIBA KK
13 patentsUS6835981B2Dec 28, 2004
Semiconductor chip which combines bulk and SOI regions and separates same with plural isolation regions
TOSHIBA KK88 citations98
US6630714B2Oct 7, 2003
Semiconductor device formed in semiconductor layer arranged on substrate with one of insulating film and cavity interposed between the substrate and the semiconductor layer
TOSHIBA KK47 citations96
US7148543B2Dec 12, 2006
Semiconductor chip which combines bulk and SOI regions and separates same with plural isolation regions
TOSHIBA KK16 citations93
US7018904B2Mar 28, 2006
Semiconductor chip having multiple functional blocks integrated in a single chip and method for fabricating the same
TOSHIBA KK17 citations93
US7057259B2Jun 6, 2006
Semiconductor wafer with ID mark, equipment for and method of manufacturing semiconductor device from them
TOSHIBA KK35 citations92
US6906384B2Jun 14, 2005
Semiconductor device having one of patterned SOI and SON structure
TOSHIBA KK44 citations92
US6855976B2Feb 15, 2005
Semiconductor device using partial SOI substrate and manufacturing method thereof
TOSHIBA KK24 citations92
US7285825B2Oct 23, 2007
Element formation substrate for forming semiconductor device
TOSHIBA KK6 citations74
US7420249B2Sep 2, 2008
Semiconductor device formed in semiconductor layer arranged on substrate with one of insulating film and cavity interposed between the substrate and the semiconductor layer
TOSHIBA KK7 citations73
US7019365B2Mar 28, 2006
Semiconductor device formed in semiconductor layer arranged on substrate with one of insulating film and cavity interposed between the substrate and the semiconductor layer
TOSHIBA KK8 citations73
US7510945B2Mar 31, 2009
Element formation substrate, method of manufacturing the same, and semiconductor device
TOSHIBA KK5 citations63
US7439112B2Oct 21, 2008
Semiconductor device using partial SOI substrate and manufacturing method thereof
TOSHIBA KK4 citations63
US7112822B2Sep 26, 2006
Semiconductor device using partial SOI substrate and manufacturing method thereof
TOSHIBA KK2 citations63
CKD CORP
8 patentsUS6041814AMar 28, 2000
Vacuum pressure control system
CKD CORP54 citations96
US6202681B1Mar 20, 2001
Vacuum pressure control system
CKD CORP12 citations74
US8807014B2Aug 19, 2014
Multi-layer diaphragm
CKD CORP3 citations63
US8888471B2Nov 18, 2014
Liquid feed pump and flow control device
CKD CORP1 citations52
US12196500B2Jan 14, 2025
Heat exchange system
CKD CORP0 citations50
US12092242B2Sep 17, 2024
Pipe welding structure
CKD CORP0 citations50
US12280346B2Apr 22, 2025
Micromixer
CKD CORP0 citations49
US12510273B2Dec 30, 2025
Temperature control system
CKD CORP0 citations48