Inventor
HSU TZU-HSIANG
TW31 patents
⚠️ This page may combine multiple inventors who share the name “HSU TZU-HSIANG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
29 patentsUS9748389B1Aug 29, 2017
Method for semiconductor device fabrication with improved source drain epitaxy
TAIWAN SEMICONDUCTOR MFG CO LTD12 citations92
US9780214B2Oct 3, 2017
Semiconductor device including Fin- FET and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US10483396B1Nov 19, 2019
Interfacial layer between fin and source/drain region
TAIWAN SEMICONDUCTOR MFG CO LTD10 citations83
US11257928B2Feb 22, 2022
Method for epitaxial growth and device
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11677027B2Jun 13, 2023
Semiconductor device and method
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US11581226B2Feb 14, 2023
Semiconductor device with tunable epitaxy structures and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations72
US11063152B2Jul 13, 2021
Semiconductor device and method
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations72
US9680017B2Jun 13, 2017
Semiconductor device including Fin FET and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations71
US10158017B2Dec 18, 2018
Semiconductor structure and method for semiconductor device fabrication with improved source drain epitaxy
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations63
US9882029B2Jan 30, 2018
Semiconductor device including Fin-FET and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations63
US12419076B2Sep 16, 2025
Semiconductor device and method
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12154947B2Nov 26, 2024
Methods of forming epitaxial source/drain features in semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11996467B2May 28, 2024
Method for epitaxial growth and device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11710792B2Jul 25, 2023
Semiconductor structure with improved source drain epitaxy
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11688794B2Jun 27, 2023
Method for epitaxial growth and device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11289574B2Mar 29, 2022
Methods of forming epitaxial source/drain features in semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US11031498B2Jun 8, 2021
Semiconductor structure with improved source drain epitaxy
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12112989B2Oct 8, 2024
Semiconductor device with tunable epitaxy structures and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11735668B2Aug 22, 2023
Interfacial layer between fin and source/drain region
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11495606B2Nov 8, 2022
FinFET having non-merging epitaxially grown source/drains
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11482620B2Oct 25, 2022
Interfacial layer between Fin and source/drain region
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US10944005B2Mar 9, 2021
Interfacial layer between fin and source/drain region
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US10629736B2Apr 21, 2020
Semiconductor structure and method for semiconductor device fabrication with improved source drain epitaxy
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10269935B2Apr 23, 2019
Semiconductor device including Fin-PET and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US11264237B2Mar 1, 2022
Method of epitaxy and semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10164097B2Dec 25, 2018
Semiconductor device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations51
US10854615B2Dec 1, 2020
FinFET having non-merging epitaxially grown source/drains
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations50
US10068992B2Sep 4, 2018
Semiconductor device including fin FET and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations50
US12484282B2Nov 25, 2025
Integrated circuit, transistor and method of fabricating the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations48