Inventor
SUNAKAWA HARUO
JP10 patents
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NEC CORP
9 patentsUS6348096B1Feb 19, 2002
Method for manufacturing group III-V compound semiconductors
NEC CORP214 citations98
US6252261B1Jun 26, 2001
GaN crystal film, a group III element nitride semiconductor wafer and a manufacturing process therefor
NEC CORP319 citations98
US6809351B2Oct 26, 2004
Group III-V compound semiconductor crystal structure and method of epitaxial growth of the same as well as semiconductor device including the same
NEC CORP129 citations97
US6555845B2Apr 29, 2003
Method for manufacturing group III-V compound semiconductors
NEC CORP67 citations96
US4859627AAug 22, 1989
Group VI doping of III-V semiconductors during ALE
NEC CORP104 citations95
US4845049AJul 4, 1989
Doping III-V compound semiconductor devices with group VI monolayers using ALE
NEC CORP100 citations95
US5843227ADec 1, 1998
Crystal growth method for gallium nitride films
NEC CORP32 citations92
US6096130AAug 1, 2000
Method of crystal growth of a GaN layer over a GaAs substrate
NEC CORP17 citations83
US5825053AOct 20, 1998
Heterostructure III-V nitride semiconductor device including InP substrate
NEC CORP3 citations62